SEMICONDUCTOR
TECHNICAL DATA
APPLICATION
・I/O
ESD protection for mobile handsets, notebook, PDAs, etc.
・EMI
filtering for data ports in cell phones, PDAs, notebook computers
・EMI
filtering for LCD, camera and chip-to-chip data lines
Pin 1
PV1010UDF16B
ESD/EMI Filter
A
1
C
E
8
GND PAD
16
FEATURES
・EMI/RFI
filtering
・ESD
Protection to IEC 61000-4-2 Level 4
・Low
insertion loss
・Good
attenuation of high frequency signals
・Low
clamping voltage
・Low
operating and leakage current
・Eight
elements in one package
J
SIDE VIEW
KL
TOP VIEW
B
F
D
BOTTOM VIEW
9
DESCRIPTION
PV1010UDF16B is an EMI filter array with electrostatic discharge (ESD) protection,
which integrates eight pi filters (C-R-C). These parts include ESD protection diodes on
every pin, providing a very high level of protection for sensitive electronic components
that may be subjected to electrostatic discharge.
The PV1010UDF16B provides the recommended line termination while implementing a
low pass filter to limit EMI levels and providing ESD protection which exceeds IEC
61000-4-2 level 4 standard. The UDFN package is a very effective PCB space
occupation and a very thin package (0.4mm Pitch, 0.5mm height)
1,16 : Filter channel 1
2,15 : Filter channel 2
3,14 : Filter channel 3
4,13 : Filter channel 4
5,12 : Filter channel 5
6,11 : Filter channel 6
7,10 : Filter channel 7
8,9 : Filter channel 8
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
_
3.30
+
0.05
_
0.05
1.35
+
_
2.90
+
0.10
_
+
0.05
0.20
0.40
_
0.40
+
0.10
_
0.25
+
0.10
0.20 Min
_
0.50
+
0.05
0.20
0.02+0.03/-0.02
UDFN-16B
MARKING
Type Name
CHARACTERISTIC
DC Power Per Resistor
Power Dissipation
Junction Temperature
Storage Temperature
* Total Package Power Dissipation
SYMBOL
P
R
*P
D
T
j
T
stg
RATING
100
800
150
-55½150
UNIT
mW
0 A
MAXIMUM RATING (Ta=25℃)
V2
Lot No.
RECOMMENEDED FOOTPRINT
(dimensions in mm)
0.40
0.30
EQUIVALENT CIRCUIT
1.66
0.55
FILTERn*
100Ω
FILTERn*
0.25
10pF
10pF
2.20
GND
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
Channel Resistance
Line Capacitance
SYMBOL
V
RWM
V
BR
I
R
fc
-3dB
R
LINE
C
LINE
I
t
=1mA
V
RWM
=3.3V
V
Line
=0V, Z
SOURCE
=50Ω, Z
LOAD
=50Ω
Between Input and Output
V
Line
=0V DC, 1MHz, Between I/O Pins and GND
V
Line
=2.5V, 1MHz, Between I/O Pins and GND
TEST CONDITION
-
MIN.
-
6
-
-
80
24
16
TYP.
-
-
-
150
100
30
20
MAX.
5
-
1.0
-
120
26
24
UNIT
V
V
μ
A
MHz
Ω
pF
2009. 6. 3
Revision No : 0
H
G
1/2
PV1010UDF16B
S
21
- FREQUENCY
0
0
-30
-60
-90
-120
-150
ANALOG CROSSTALK
INSERTION LOSS (dB)
-10
-20
-30
-40
1
10
100
1000
6000
CROSSTALK (dB)
1
10
100
1000
6000
FREQUENCY (MHz)
FREQUENCY (MHz)
DIODE CAPACITANCE vs. INPUT VOLTAGE
NORMALIZED CAPACITANCE
2.0
110
108
R
Line
- TEMPERATURE
RESISTANCE R (Ω)
1.5
106
104
102
100
98
96
94
92
90
-40
1.0
0.5
0.0
0
1
2
3
4
5
-20
0
20
40
60
80
DIODE VOLTAGE (V)
AMBIENT TEMPERATURE Ta ( C )
2009. 6. 3
Revision No : 0
2/2
