PY263/PY264
8K x 8 REPROGRAMMABLE PROM
FEATURES
EPROM Technology for reprogramming
High Speed
– 25/35/45/55 ns (Commercial)
– 25/35/45/55 ns (Military)
Low Power Operation:
– 660 mW Commercial
– 770 mW Military
Single 5V±10% Power Supply
Windowed devices for reprogramming
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 24-Pin 300 mil Windowed CERDIP (PY263)
– 24-Pin 300 mil Non-Windowed Plastic DIP
(PY263)
– 24-Pin 600 mil Windowed CERDIP (PY264)
– 24-Pin 600 mil Non-Windowed Plastic DIP
(PY264)
DESCRIPTION
The PY263 and PY264 are 8Kx8 CMOS PROMs. The
devices are available in windowed packages which when
exposed to UV light, the memory content in the PROM is
erased and can be reprogrammed. EPROM technology is
used in the memory cells for programming. The EPROM
requires a 12.5V for programming. Devices are tested to
insure that performance of the device meets the DC and
AC specification limits after customer programming.
To perform a read operation from the device,
CS
is LOW.
The memory contents in the address established by the
Address pins (A
0
to A
12
) will become available on the out-
puts (O
0
to O
7
).
The PY263 is available in 24-pin 300 mil Ceramic DIPs
(Windowed) and Plastic DIPs (Non-Windowed).
The PY264 is available in 24-pin 600 mil Ceramic DIPs
(Windowed) and Plastic DIPs (Non-Windowed).
FUNCTIONAL BLOCk DIAgRAM
PIN CONFIgURATION
DIP (P8, WD2)
Note: Window on
WD2 package only
Document #
EPROM102
REV A
Revised March 2009
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
MAxIMUM RATINgS
(1)
Sym
V
CC
V
TERM
V
PP
T
A
T
BIAS
T
STG
P
T
I
OUT
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND (up to
7.0V)
Program Voltage
Operating Temperature
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Value
-0.5 to +7
-0.5 to VCC + 0.5
13
-55 to +125
-55 to +125
-65 to +150
1.0
50
Unit
V
V
V
°C
°C
°C
W
mA
RECOMMENDED OPERATINg CONDITIONS
grade
(2)
Commercial
Military
Ambient Temp
0°C to 70°C
-55°C to +125°C
gND
0V
0V
V
CC
5.0V ± 10%
5.0V ± 10%
CAPACITANCES
(4)
Sym
C
IN
C
OUT
Parameter
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
Conditions
V
IN
=0V
V
OUT
=0V
Typ
10
10
Unit
pF
pF
Input Capacitance
Output Capacitance
DC ELECTRICAL CHARACTERISTICS
Sym
V
IH
V
IL
V
HC
V
LC
V
OL
V
OH
I
LI
I
LO
V
PP
I
PP
V
IHP
V
ILP
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Output Low Voltage (TTL Load)
Output High Voltage (TTL Load)
Input Leakage Current
(Over Recommended Operating Temperature & Supply Voltage)
(2)
Test Conditions
PY263 / PY264
Min
2.0
-0.5
(3)
V
CC
- 0.2
-0.5
(3)
I
OL
=+16 mA, V
CC
= Min.
I
OH
= - 4 mA, V
CC
= Min
V
CC
= Max, V
IN
= GND to V
CC
V
CC
= Max,
CE
= V
IH
,
V
OUT
= GND to V
CC
COM
MIL
COM
MIL
2.4
-10
-40
-10
-40
12
+10
+40
+10
+40
13
50
4.75
0.4
Max
V
CC
0.8
V
CC
+ 0.5
0.2
0.4
Unit
V
V
V
V
V
V
µA
µA
µA
µA
V
mA
V
V
Output Leakage Current
Programming Supply Voltage
Programming Supply Current
Input HIGH Programming Voltage
Input LOW Programming Voltage
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Sym
I
CC
Parameter
Dynamic Operating Current
Temperature Range
Commercial
Military
-25
120
140
-35
100
120
-45
100
120
-55
100
120
Unit
mA
mA
* V
CC
= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
CS
= V
IL
.
Document #
EPROM102
REV A
Page 2
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Sym
t
AA
t
HZCS
t
ACS
t
PU
Parameter
Address to Output Valid
Chip Select Inactive to High Z
Chip Select Active to Output Valid
Chip Select Active to Power-Up
0
-25
Min
Max
25
12
12
0
Min
-35
Max
35
20
20
0
Min
-45
Max
45
30
30
0
Min
-55
Max
55
35
35
Unit
ns
ns
ns
ns
TIMINg WAVEFORM OF READ CYCLE
Notes:
1. Stresses greater than those listed under MAxIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAxIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL
and I
IL
not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
Document #
EPROM102
REV A
Page 3
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
DEVICE ERASURE
If the device is subjected to wavelengths of light below
4000 Angstroms, device erasure will commence. It is
therefore recommended to use an opaque label over the
window in the event the device will be exposed to light-
ing for a long time. The UV dose for erasure requires a
wavelength of 2,537 Angstroms for a minimum dose of 25
Wsec/cm
2
. If using a UV lamp of 12 mW/cm
2
, the expo-
sure time is estimated to be 35 minutes. Devices should
be positioned within 1 inch of the lamp during the erasure
process. Permanent damage can occur to the devices if
exposed to UV light for an extended period of time.
READ MODE
Reading the addressed content is the normal operating
mode for a programmed device. Signals are at normal
TTL levels. Addressing is applied to the 13 address pins
and
CS
is LOW. Under these conditions, the addressed
location contents are presented to the output pins.
MODE SELECTION
Pin Function
Mode
Read
Output Disable
Program
Program Inhibit
Program Verify
Blank Check
Read or Output Disable
Program
A
12
NA
A
12
A
12
V
ILP
V
ILP
V
ILP
V
ILP
A
11
V
PP
A
11
A
11
V
PP
V
PP
V
PP
V
PP
A
10
LATCH
A
10
A
10
V
ILP
V
ILP
V
ILP
V
ILP
A
9
PGM
A
9
A
9
V
ILP
V
IHP
V
IHP
V
IHP
A
8
VFY
A
8
A
8
V
IHP
V
IHP
V
ILP
V
ILP
CS
CS
V
IL
V
IH
V
ILP
V
ILP
V
ILP
V
ILP
O
7
-O
0
D
7
-D
0
O
7
-O
0
High Z
D
7
-D
0
High Z
O
7
-O
0
O
7
-O
0
PROgRAMMINg PINOUTS
Document #
EPROM102
REV A
Page 4
PY263/PY264 - 8K x 8 REPROGRAMMABLE PROM
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input Timing Reference Level
Output Timing Reference Level
Output Load
GND to 3.0V
3ns
1.5V
1.5V
See Figures 1 and 2
* including scope and test fixture.
Figure 1. Output Load
Figure 2. Thevenin Equivalent
Note:
Because of the ultra-high speed of the PY263/PY264, care must be
taken when testing this device; an inadequate setup can cause a normal
functioning part to be rejected as faulty. Long high-inductance leads that
cause supply bounce must be avoided by bringing the V
CC
and ground
planes directly up to the contactor fingers. A 0.01 µF high frequency
capacitor is also required between V
CC
and ground.
Document #
EPROM102
REV A
Page 5
嵌入式系统
