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PZM12NB2,115

PZM-N series - Voltage regulator diodes SMT 3-Pin

器件类别:分立半导体    二极管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
Brand Name
NXP Semiconductor
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
SMT
包装说明
R-PDSO-G3
针数
3
制造商包装代码
SOT346
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JEDEC-95代码
TO-236
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
0.3 W
认证状态
Not Qualified
标称参考电压
12 V
最大反向电流
0.1 µA
表面贴装
YES
技术
ZENER
端子面层
TIN
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
电压温度Coeff-Max
8.4 mV/°C
最大电压容差
2.09%
工作测试电流
5 mA
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PZM-N series
Voltage regulator diodes
Product specification
Supersedes data of 1997 Dec 15
1999 Jan 28
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
Total power dissipation:
max. 300 mW
Small plastic package suitable for
surface mounted design
Wide working voltage range:
nom. 2.4 to 75 V (E24 range).
APPLICATIONS
General regulation functions.
DESCRIPTION
Low power general purpose voltage
regulator diode in a SOT346 (SC59)
plastic package, suitable for surface
mounted design.
PINNING
PIN
1
2
3
anode
not connected
cathode
PZM-N series
DESCRIPTION
handbook, halfpage
3
2
n.c.
3
1
Top view
2
MAM378
1
Fig.1 Simplified outline (SOT346; SC59) and symbol.
MARKING
TYPE
NUMBER
PZM2.4N
PZM2.7N
PZM3.0N
PZM3.3N
PZM3.6N
PZM3.9N
PZM4.3N
PZM4.7N
PZM5.1N
PZM5.6N
PZM6.2N
PZM6.8N
PZM7.5N
PZM8.2N
PZM9.1N
PZM10N
PZM11N
PZM12N
PZM13N
MARKING CODE
B
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10V
11V
12V
13V
B1
271
301
331
361
391
431
471
511
561
621
681
751
821
911
101
111
121
131
B2
272
302
332
362
392
432
472
512
562
622
682
752
822
912
102
112
122
132
B3
433
473
513
563
623
683
753
823
913
103
113
123
133
TYPE
NUMBER
PZM15N
PZM16N
PZM18N
PZM20N
PZM22N
PZM24N
PZM27N
PZM30N
PZM33N
PZM36N
PZM39N
PZM43N
PZM47N
PZM51N
PZM56N
PZM62N
PZM68N
PZM75N
MARKING CODE
B
15V
16V
18V
20V
22V
24V
27V
30V
33V
36V
39V
43V
47V
51V
56V
62V
68V
75V
B1
151
161
181
201
221
241
B2
152
162
182
202
222
242
B3
153
163
183
203
223
243
1999 Jan 28
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
T
stg
T
j
PARAMETER
continuous forward current
non-repetitive peak current
total power dissipation
storage temperature
operating junction temperature
t
p
= 100
µs;
square wave;
T
amb
= 25
°C
prior to surge
T
amb
= 25
°C
CONDITIONS
MIN.
PZM-N series
MAX.
250
UNIT
mA
see Tables 1 and 2
−65
300
+150
150
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
CONDITIONS
VALUE
300
UNIT
K/W
thermal resistance from junction to soldering point T
s
= 60
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
PZM2.4N
PZM2.7N
PZM3.0N
PZM3.3N
PZM3.6N
PZM3.9N
PZM4.3N
PZM4.7N
PZM5.1N
PZM5.6N
PZM6.2N
PZM6.8N
PZM7.5N
PZM8.2N
PZM9.1N
PZM10N
PZM11N
PZM12N
PZM13N
PZM15N
PZM16N
1999 Jan 28
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1.5 V
V
R
= 2.5 V
V
R
= 3.0 V
V
R
= 3.5 V
V
R
= 4.0 V
V
R
= 5.0 V
V
R
= 6.0 V
V
R
= 7.0 V
V
R
= 8.0 V
V
R
= 9.0 V
V
R
= 10.0 V
V
R
= 11.0 V
V
R
= 12.0 V
3
50
20
10
5
5
3
3
3
3
2
2
2
1
700
500
200
100
100
100
70
70
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
nA
CONDITIONS
I
F
= 10 mA; see Fig.2
I
F
= 100 mA; see Fig.2
MAX.
0.9
1.1
V
V
UNIT
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
SYMBOL
I
R
PZM18N
PZM20N
PZM22N
PZM24N
PZM27N
PZM30N
PZM33N
PZM36N
PZM39N
PZM43N
PZM47N
PZM51N
PZM56N
PZM62N
PZM68N
PZM75N
PARAMETER
reverse current
V
R
= 13.0 V
V
R
= 15.0 V
V
R
= 17.0 V
V
R
= 19.0 V
V
R
= 21.0 V
V
R
= 23.0 V
V
R
= 25.0 V
V
R
= 27.0 V
CONDITIONS
MAX.
70
70
70
70
70
70
70
70
50
50
50
50
50
50
50
50
UNIT
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
V
R
= 0.7 V
Znom
V
R
= 0.7 V
Znom
V
R
= 0.7 V
Znom
V
R
= 0.7 V
Znom
V
R
= 0.7 V
Znom
V
R
= 0.7 V
Znom
V
R
= 0.7 V
Znom
V
R
= 0.7 V
Znom
1999 Jan 28
4
1999 Jan 28
5
Philips Semiconductors
Table 1
Per type; PZM2.4N to PZM24N
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Z
= 5 mA; t
m
= 40 ms
B
MIN.
2.4N
2.7N
3.0N
3.3N
3.6N
3.9N
4.3N
4.7N
5.1N
5.6N
6.2N
6.8N
7.5N
8.2N
9.1N
10N
11N
12N
13N
15N
16N
18N
20N
22N
24N
2.30
2.50
2.80
3.10
3.40
3.70
4.01
4.42
4.84
5.31
5.86
6.47
7.06
7.76
8.56
9.45
10.44
11.42
12.47
13.84
15.37
16.94
18.86
20.88
22.93
MAX.
2.60
2.90
3.20
3.50
3.80
4.10
4.48
4.90
5.37
5.92
6.53
7.14
7.84
8.64
9.55
10.55
11.56
12.60
13.96
15.52
17.09
19.03
21.08
23.17
25.57
MIN.
2.50
2.80
3.10
3.40
3.70
4.01
4.42
4.84
5.31
5.86
6.47
7.06
7.76
8.56
9.45
10.44
11.42
12.47
13.84
15.37
16.94
18.86
20.88
22.93
B1
MAX.
2.75
3.05
3.35
3.65
3.97
4.21
4.61
5.04
5.55
6.12
6.73
7.36
8.10
8.93
9.87
10.88
11.90
13.03
14.46
16.01
17.70
19.70
21.77
23.96
MIN.
2.65
2.95
3.25
3.55
3.87
4.15
4.55
4.98
5.49
6.06
6.65
7.28
8.02
8.85
9.77
10.76
11.74
12.91
14.34
15.85
17.56
19.52
21.54
23.72
B2
MAX.
2.90
3.20
3.50
3.80
4.10
4.34
4.75
5.20
5.73
6.33
6.93
7.60
8.36
9.23
10.21
11.22
12.24
13.49
14.98
16.51
18.35
20.39
22.47
24.78
MIN.
4.28
4.69
5.14
5.67
6.26
6.86
7.52
8.28
9.15
10.11
11.10
12.08
13.37
14.85
16.35
18.21
20.21
22.23
24.54
B3
MAX.
4.48
4.90
5.37
5.92
6.53
7.14
7.84
8.64
9.55
10.55
11.56
12.60
13.96
15.52
17.09
19.03
21.08
23.17
25.57
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
I
Z
= 1 mA
I
Z
= 5 mA
TEMP.
COEFF.
S
Z
(mV/K)
at
I
Z
= 5 mA
TYP.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
18.4
20.4
DIODE
NON-REPETITIVE
CAP.
PEAK REVERSE
C
d
(pF)
CURRENT
at
I
ZSM
(A)
f = 1 MHz;
at t
p
= 100
µs;
V
R
= 0
T
amb
= 25
°C
MAX.
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
108
105
103
99
97
93
88
84
80
MAX.
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
3.50
3.50
3.50
3.50
3.00
3.00
2.50
2.00
1.50
1.50
1.50
1.25
1.25
Voltage regulator diodes
PZM
-XXX
TYP. MAX. TYP. MAX.
275
300
325
350
375
400
410
425
400
80
40
30
15
20
20
20
25
25
25
25
25
25
30
30
30
400
450
500
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
70
75
80
85
85
85
80
50
40
15
6
6
2
2
2
2
2
2
2
3
4
4
4
5
6
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
20
20
20
25
30
PZM-N series
Product specification
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参数对比
与PZM12NB2,115相近的元器件有:PZM9.1NB2,115、PZM7.5NB2,115、PZM3.3NB,115、PZM15NB2,115、PZM15NB1,115、PZM8.2NB2,115。描述及对比如下:
型号 PZM12NB2,115 PZM9.1NB2,115 PZM7.5NB2,115 PZM3.3NB,115 PZM15NB2,115 PZM15NB1,115 PZM8.2NB2,115
描述 PZM-N series - Voltage regulator diodes SMT 3-Pin PZM-N series - Voltage regulator diodes SMT 3-Pin PZM-N series - Voltage regulator diodes SMT 3-Pin PZM-N series - Voltage regulator diodes SMT 3-Pin PZM-N series - Voltage regulator diodes SMT 3-Pin PZM-N series - Voltage regulator diodes SMT 3-Pin PZM-N series - Voltage regulator diodes SMT 3-Pin
Brand Name NXP Semiconductor NXP Semiconductor NXP Semiconductor NXP Semiconductor NXP Semiconductor NXP Semiconductor NXP Semiconductor
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
零件包装代码 SMT SMT SMT SMT SMT SMT SMT
包装说明 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
针数 3 3 3 3 3 3 3
制造商包装代码 SOT346 SOT346 SOT346 SOT346 SOT346 SOT346 SOT346
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE
JEDEC-95代码 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e3 e3 e3 e3 e3 e3 e3
元件数量 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
最大功率耗散 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
标称参考电压 12 V 9.1 V 7.5 V 3.3 V 15 V 15 V 8.2 V
最大反向电流 0.1 µA 0.5 µA 1 µA 5 µA 0.07 µA 0.07 µA 0.7 µA
表面贴装 YES YES YES YES YES YES YES
技术 ZENER ZENER ZENER ZENER ZENER ZENER ZENER
端子面层 TIN TIN TIN TIN TIN TIN TIN
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电压温度Coeff-Max 8.4 mV/°C 5.5 mV/°C 4 mV/°C - 11.4 mV/°C 11.4 mV/°C 4.6 mV/°C
最大电压容差 2.09% 2.1% 2.15% 6.06% 2.18% 2.19% 2.08%
工作测试电流 5 mA 5 mA 5 mA 5 mA 5 mA 5 mA 5 mA
厂商名称 NXP(恩智浦) - NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
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器件捷径:
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