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PZT2222A/G,115

600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
600 mA, 40 V, NPN, 硅, 小信号晶体管

器件类别:半导体    分立半导体   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

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器件参数
参数名称
属性值
端子数量
4
晶体管极性
NPN
最大导通时间
35 ns
最大关断时间
250 ns
最大集电极电流
0.6000 A
最大集电极发射极电压
40 V
加工封装描述
PLASTIC, SC-73, 4 PIN
无铅
Yes
欧盟RoHS规范
Yes
中国RoHS规范
Yes
状态
ACTIVE
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子涂层
TIN
端子位置
DUAL
包装材料
PLASTIC/EPOXY
结构
SINGLE
壳体连接
COLLECTOR
元件数量
1
晶体管应用
SWITCHING
晶体管元件材料
SILICON
晶体管类型
GENERAL PURPOSE SMALL SIGNAL
最小直流放大倍数
75
额定交叉频率
300 MHz
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZT2222A
NPN switching transistor
Product data sheet
Supersedes data of 1997 Jun 02
1999 Apr 14
NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
High current (max. 600 mA)
Low voltage (max. 40 V).
APPLICATIONS
Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT223 plastic package.
PNP complement: PZT2907A.
1
4
PZT2222A
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
2, 4
3
1
Top view
2
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−65
−65
MIN.
MAX.
75
40
6
600
800
200
1.15
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
1999 Apr 14
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
PZT2222A
VALUE
109
28
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
amb
= 125
°C
I
C
= 0; V
EB
= 5 V
I
C
= 0.1 mA; V
CE
= 10 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V;
T
amb
=
−55 °C
I
C
= 150 mA; V
CE
= 1 V; note 1
I
C
= 150 mA; V
CE
= 10 V; note 1
I
C
= 500 mA; V
CE
= 10 V; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
300
µs; δ ≤
0.02.
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA; T
amb
= 25
°C
35
50
75
35
50
100
40
0.6
300
MIN.
MAX.
10
10
10
300
300
1
1.2
2
8
25
mV
V
V
V
pF
pF
MHz
UNIT
nA
µA
nA
Switching times (between 10% and 90% levels);
(see Fig.2)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
35
10
25
250
200
60
ns
ns
ns
ns
ns
ns
1999 Apr 14
3
NXP Semiconductors
Product data sheet
NPN switching transistor
PZT2222A
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
R2
RC
Vo
(probe)
450
DUT
oscilloscope
MLB826
V
i
= 9.5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
=
−3.5
V; V
CC
= 29.5 V.
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
1999 Apr 14
4
NXP Semiconductors
Product data sheet
NPN switching transistor
PACKAGE OUTLINE
PZT2222A
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 Apr 14
5
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参数对比
与PZT2222A/G,115相近的元器件有:PZT2222A,115、PZT2222A,135、PZT2222A。描述及对比如下:
型号 PZT2222A/G,115 PZT2222A,115 PZT2222A,135 PZT2222A
描述 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 600 A, 40 V, NPN, Si, POWER TRANSISTOR
表面贴装 Yes YES YES YES
端子数量 4 4 4 -
端子形式 GULL WING GULL WING GULL WING -
端子位置 DUAL DUAL DUAL -
元件数量 1 1 1 -
晶体管应用 SWITCHING SWITCHING SWITCHING -
晶体管元件材料 SILICON SILICON SILICON -
是否Rohs认证 - 符合 符合 不符合
厂商名称 - NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
Reach Compliance Code - compli compli unknow
最大集电极电流 (IC) - 0.6 A 0.6 A 0.6 A
配置 - SINGLE SINGLE Single
最小直流电流增益 (hFE) - 75 75 100
最高工作温度 - 150 °C 150 °C 150 °C
极性/信道类型 - NPN NPN NPN
最大功率耗散 (Abs) - 1.15 W 1.15 W 1.5 W
标称过渡频率 (fT) - 300 MHz 300 MHz 300 MHz
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