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PZU9.1B2A/DG

DIODE 9.1 V, 0.32 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SC-76, 2 PIN, Voltage Regulator Diode

器件类别:分立半导体    二极管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
SC-76
包装说明
R-PDSO-G2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
10 Ω
JESD-30 代码
R-PDSO-G2
元件数量
1
端子数量
2
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性
UNIDIRECTIONAL
最大功率耗散
0.32 W
认证状态
Not Qualified
标称参考电压
9.1 V
表面贴装
YES
技术
ZENER
端子形式
GULL WING
端子位置
DUAL
最大电压容差
2%
工作测试电流
5 mA
文档预览
PZUxBA series
Single Zener diodes
Rev. 01 — 19 September 2008
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD323 (SC-76) very small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I
Non-repetitive peak reverse power
dissipation: P
ZSM
40 W
I
Total power dissipation: P
tot
320 mW
I
Tolerance series:
B: approximately
±5
%;
B1, B2, B3: approximately
±2
%
I
Wide working voltage range:
nominal 2.4 V to 36 V (E24 range)
I
Low reverse current I
R
range
I
Small plastic package suitable for
surface-mounted design
I
AEC-Q101 qualified
1.3 Applications
I
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
ZSM
P
tot
[1]
[2]
[3]
Quick reference data
Parameter
forward voltage
non-repetitive peak reverse
power dissipation
total power dissipation
T
amb
25
°C
Conditions
I
F
= 100 mA
[1]
[2]
Min
-
-
-
Typ
-
-
-
Max
1.1
40
320
Unit
V
W
mW
[3]
Pulse test: t
p
300
µs; δ ≤
0.02.
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
NXP Semiconductors
PZUxBA series
Single Zener diodes
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Graphic symbol
1
2
006aaa152
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PZU2.4BA to
PZU36BA
[1]
PZU2.4BA/DG to
PZU36BA/DG
[1][2]
[1]
[2]
The series consists of 97 types with nominal working voltages from 2.4 V to 36 V.
/DG: halogen-free
Type number
Description
plastic surface-mounted package; 2 leads
Version
SOD323
SC-76
PZUXBA_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 19 September 2008
2 of 14
NXP Semiconductors
PZUxBA series
Single Zener diodes
4. Marking
Table 4.
Marking codes
Marking code
B
PZU2.4*A
PZU2.7*A
PZU3.0*A
PZU3.3*A
PZU3.6*A
PZU3.9*A
PZU4.3*A
PZU4.7*A
PZU5.1*A
PZU5.6*A
PZU6.2*A
PZU6.8*A
PZU7.5*A
PZU8.2*A
PZU9.1*A
PZU10*A
PZU11*A
PZU12*A
PZU13*A
PZU14*A
PZU15*A
PZU16*A
PZU18*A
PZU20*A
PZU22*A
PZU24*A
PZU27*A
PZU30*A
PZU33*A
PZU36*A
[1]
Type number
[1]
Type number
[1]
B2
-
XB
XV
XY
MD
MG
MP
MU
MY
LH
LN
LT
LX
CS
CW
VC
VG
VM
VS
VU
VX
X2
X6
XE
XK
XP
-
-
-
-
B3
-
-
-
-
-
-
MR
MV
MZ
LK
LP
LU
LY
CT
CX
VD
VH
VN
VT
-
VY
X3
X7
XF
XL
XR
-
-
-
-
PZU2.4*A/DG
PZU2.7*A/DG
PZU3.0*A/DG
PZU3.3*A/DG
PZU3.6*A/DG
PZU3.9*A/DG
PZU4.3*A/DG
PZU4.7*A/DG
PZU5.1*A/DG
PZU5.6*A/DG
PZU6.2*A/DG
PZU6.8*A/DG
PZU7.5*A/DG
PZU8.2*A/DG
PZU9.1*A/DG
PZU10*A/DG
PZU11*A/DG
PZU12*A/DG
PZU13*A/DG
PZU14*A/DG
PZU15*A/DG
PZU16*A/DG
PZU18*A/DG
PZU20*A/DG
PZU22*A/DG
PZU24*A/DG
PZU27*A/DG
PZU30*A/DG
PZU33*A/DG
PZU36*A/DG
Marking code
B
Y8
Y9
YT
YW
YZ
NE
NM
NS
NW
RF
RL
RR
RV
RZ
EU
WA
WE
WK
WP
-
WV
WZ
Y4
YC
YG
YM
YS
NH
NK
NL
B1
-
YA
YU
YX
NC
NF
NN
NT
NX
RG
RM
RS
RW
ER
EV
WB
WF
WL
WR
-
WW
Y1
Y5
YD
YH
YN
-
-
-
-
B2
-
YB
YV
YY
ND
NG
NP
NU
NY
RH
RN
RT
RX
ES
EW
WC
WG
WM
WS
WU
WX
Y2
Y6
YE
YK
YP
-
-
-
-
B3
-
-
-
-
-
-
NR
NV
NZ
RK
RP
RU
RY
ET
EX
WD
WH
WN
WT
-
WY
Y3
Y7
YF
YL
YR
-
-
-
-
B1
-
XA
XU
XX
MC
MF
MN
MT
MX
LG
LM
LS
LW
CR
CV
VB
VF
VL
VR
-
VW
X1
X5
XD
XH
XN
-
-
-
-
X8
X9
XT
XW
XZ
ME
MM
MS
MW
LF
LL
LR
LV
LZ
CU
VA
VE
VK
VP
-
VV
VZ
X4
XC
XG
XM
XS
MH
MK
ML
* = B: tolerance series B, approximately
±5
%
* = B1, B2, B3: tolerance series B1, B2, B3: approximately
±2
%
PZUXBA_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 19 September 2008
3 of 14
NXP Semiconductors
PZUxBA series
Single Zener diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[1]
Conditions
Min
-
-
Max
200
see
Table 8
and
9
40
320
490
150
+150
+150
Unit
mA
P
ZSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[1]
-
-
-
-
−55
−65
W
mW
mW
°C
°C
°C
T
amb
25
°C
[2]
[3]
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
390
255
55
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 10 mA
I
F
= 100 mA
[1]
Pulse test: t
p
300
µs; δ ≤
0.02.
Conditions
[1]
Min
-
-
Typ
-
-
Max
0.9
1.1
Unit
V
V
PZUXBA_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 19 September 2008
4 of 14
NXP Semiconductors
PZUxBA series
Single Zener diodes
Table 8.
Characteristics per type; PZU2.4BA to PZU5.6B3A and PZU2.4BA/DG to PZU5.6B3A/DG
T
j
= 25
°
C unless otherwise specified.
PZUxBA
Sel
Working
voltage
V
Z
(V)
I
Z
= 5 mA
Min
2.4
2.7
B
B
B1
B2
3.0
B
B1
B2
3.3
B
B1
B2
3.6
B
B1
B2
3.9
B
B1
B2
4.3
B
B1
B2
B3
4.7
B
B1
B2
B3
5.1
B
B1
B2
B3
5.6
B
B1
B2
B3
[1]
[2]
Differential resistance Reverse
r
dif
(Ω)
current
I
R
(µA)
I
Z
= 0.5 mA I
Z
= 5 mA
Max
1000
1000
Max
100
100
Max
50
20
V
R
(V)
1
1
Temperature Diode
coefficient
capacitance
S
Z
(mV/K)
C
d
(pF)
[1]
I
Z
= 5 mA
Typ
−1.6
−2.0
Max
450
440
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
Max
8
8
Max
2.6
2.9
2.75
2.9
3.2
3.05
3.2
3.5
3.35
3.5
3.8
3.65
3.8
4.1
3.97
4.10
4.48
4.21
4.34
4.48
4.9
4.61
4.75
4.9
5.37
5.04
5.2
5.37
5.92
5.55
5.73
5.92
2.3
2.5
2.5
2.65
2.8
2.8
2.95
3.1
3.1
3.25
3.4
3.4
3.55
3.7
3.7
3.87
4.01
4.01
4.15
4.28
4.42
4.42
4.55
4.69
4.84
4.84
4.98
5.14
5.31
5.31
5.49
5.67
1000
95
10
1
−2.1
425
8
1000
95
5
1
−2.4
410
8
1000
90
5
1
−2.4
390
8
1000
90
3
1
−2.5
370
8
1000
90
3
1
−2.5
350
8
800
80
2
1
−1.4
325
8
250
60
2
1.5
0.3
300
5.5
100
40
1
2.5
1.9
275
5.5
f = 1 MHz; V
R
= 0 V
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
PZUXBA_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 19 September 2008
5 of 14
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