NPN Silicon RF Transistor
q
BF 554
For general small-signal RF applications
up to 300 MHz in amplifier,
mixer and oscillator circuits
Type
BF 554
Marking
CC
Ordering Code
(tape and reel)
Q62702-F1042
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation,
T
A
≤
25 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
R
th JA
≤
Symbol
V
CE0
V
CB0
V
EB0
I
C
P
tot
T
j
T
stg
Values
20
30
5
30
280
150
– 65 … + 150
Unit
V
mA
mW
˚C
450
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm
×
16.7 mm
×
0.7 mm.
Semiconductor Group
1
07.94
BF 554
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector cutoff current
V
CB
= 20 V,
I
E
= 0
DC current gain
I
C
= 1 mA,
V
CE
= 10 V
Base-emitter voltage
I
C
= 1 mA,
V
CE
= 10 V
AC Characteristics
Transition frequency
I
C
= 1 mA,
V
CE
= 10 V,
f
= 100 MHz
Collector-base capacitance
V
CE
= 10 V,
V
BE
= 0 V,
f
= 1 MHz
Noise figure
I
C
= 1 mA,
V
CE
= 10 V
f
= 200 kHz,
g
S
= 2 mS
f
= 1 MHz,
g
S
= 1.5 mS
f
= 100 MHz,
g
S
= 10 mS
Output conductance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 0.5...10 MHz
f
T
C
cb
F
–
–
–
g
22e
–
1.5
1.2
3
4
–
–
–
–
µ
S
Values
typ.
max.
Unit
V
(BR) CE0
I
CB0
h
FE
V
BE
20
–
60
–
–
–
–
0.7
–
100
250
–
V
nA
–
V
–
–
250
0.6
–
–
MHz
pF
dB
Semiconductor Group
2
BF 554
Total power dissipation
P
tot
=
f
(T
A
)
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 10 V
Collector current
I
C
=
f
(V
BE
)
V
CE
= 10 V
Collector-emitter saturation voltage
V
CEsat
=
f
(I
C
)
h
FE
= 10
Semiconductor Group
3
BF 554
Collector cutoff current
I
CB0
=
f
(T
A
)
V
CB
= 20 V
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 10 V,
f
= 100 MHz
Collector-base capacitance
C
cb
=
f
(V
CB
)
f
= 1 MHz
Noise figure
F
=
f
(f)
I
C
= 1 mA,
V
CE
= 10 V,
R
S
= 60
Ω
Semiconductor Group
4
