BFP 181W
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5mA to 12mA
•
f
T
= 8GHz
F
= 1.45dB at 900MHz
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 181W
RFs
Q62702-F1501
1=E
2=C
3=E
4=B
Package
SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Symbol
Values
12
20
20
2
20
2
mW
175
150
- 65 ... + 150
- 65 ... + 150
≤
340
°C
mA
Unit
V
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
1)
T
S
≤
91 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
R
thJS
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Aug-30-1996
BFP 181W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CEO
12
-
-
-
-
100
-
V
µA
-
100
nA
-
100
µA
-
1
-
50
200
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
I
CES
I
CBO
I
EBO
h
FE
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 8 V
Semiconductor Group
2
Aug-30-1996
BFP 181W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
min.
AC Characteristics
Transition frequency
Values
typ.
max.
Unit
f
T
6
8
0.24
0.27
0.32
-
GHz
pF
-
0.4
-
-
dB
-
-
1.45
1.8
-
-
I
C
= 10 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
C
cb
C
ce
-
V
CB
= 10 V,
V
BE
=
v
be
= 0 ,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 10 V,
V
BE
=
v
be
= 0 ,
f
= 1 MHz
Emitter-base capacitance
C
eb
-
V
EB
= 0.5 V,
V
CB
=
v
cb
= 0 ,
f
= 1 MHz
Noise figure
F
I
C
= 2 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
f
= 900 MHz
f
= 1.8 GHz
Power gain
1)
G
ms
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
|S
21e
|
2
-
-
16.5
11.5
-
-
-
-
20
16.5
-
-
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=Z
L
= 50
Ω
f
= 900 MHz
f
= 1.8 GHz
1)
G
ms
= |S
21
/S
12
|
Semiconductor Group
3
Aug-30-1996
BFP 181W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.0010519 fA
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
22.403
1.7631
5.1127
1.6528
6.6315
1.8168
17.028
1.0549
1.1633
2.7449
0
3
V
-
V
-
Ω
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
96.461
0.12146
16.504
0.24951
9.9037
2.1372
0.73155
0.33814
0
0.30013
0
0
0.99768
-
A
-
A
Ω
Ω
V
-
deg
-
fF
-
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.90617
12.603
0.87757
0.01195
0.69278
2.2171
0.43619
0.12571
319.69
0.75
1.11
300
-
fA
-
fA
mA
Ω
-
V
fF
V
eV
K
0.082903 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
LBI =
LBO =
LEI =
LEO =
LCI =
LCO =
CBE =
CCB =
CCE =
0.43
0.47
0.26
0.12
0.06
0.36
68
46
232
nH
nH
nH
nH
nH
nH
fF
fF
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/357.htm
Semiconductor Group
4
Aug-30-1996
BFP 181W
Total power dissipation
P
tot
=
f
(T
A
*,
T
S
)
* Package mounted on epoxy
200
mW
P
tot
160
T
S
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120 °C 150
T
A
,T
S
T
A
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
2
R
thJS
K/W
P
totmax
/P
totDC
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1
10
1
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10
t
p
-1
0
10
0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10
t
p
-1
0
Semiconductor Group
5
5
