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Q62702-G44

GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication)

厂商名称:SIEMENS

厂商官网:http://www.infineon.com/

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GaAs MMIC
CGY 120
________________________________________________________________________________________________________
Datasheet
*
Monolithic microwave IC
(MMIC-Amplifier) for mobile communication
*
Variable gain amplifier for GSM/PCN
applications
* Gain Control range over 50dB
*
50Ω input and output matched
*
Low power consumption
*
Operating voltage range: 2.7 to 6 V
*
Frequency range 800 MHz ... 2.5 GHz
ESD:
Electrostatic discharge
sensitive device,
observe handling precautions!
Vd1
6
RF-GND
5
Vd2; RF-out
4
3
2
1
RF-GND
RF-in; -Vg
Vcontrol
Type
Marking
Ordering code
(taped)
Package 1)
CGY 120
Y8
Q62702-G44
MW-6
Maximum ratings
Drain voltage
Negative supply voltage
Channel temperature
Storage temperature range
Total power dissipation
(TS < 84°C) 2)
Thermal resistance
Channel-soldering point (GND)
Symbol
Unit
8
-3
150
-55...+150
600
V
V
°C
°C
mW
VD
Vg, Vcon
TCh
Tstg
Ptot
RthchS
< 110
K/W
1) Dimensions see chapter Package Outlines
2) Please care for sufficient heat dissipation on the pcb!
Rev 2
Siemens Aktiengesellschaft
pg. 1/7
17.09.96
HL EH PD21/Gü
GaAs MMIC
Electrical characteristics
TA
= 25°C f = 900 MHz
Characteristics
Power Gain
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
Input return loss
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
Output return loss
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
Gain Control Range
Vcon=2 V ... -2V; Vd=3V; I=45mA
CGY 120
________________________________________________________________________________________________________
RS = RL = 50
unless otherwise specified
Symbol
min
-
-
typ
22
24
max
-
-
dB
-
-
14
15
-
-
dB
-
-
50
11
11
55
14
21
-
-
-
dB
dBm
Unit
dB
G
RLin
RLout
dG
P1dB
1dBm gain compression
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
Electrical characteristics
TA
= 25°C f = 1800 MHz
Characteristics
Power Gain
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
Input return loss
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
Output return loss
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
Gain Control Range
Vcon=2 V ... -2V; Vd=3V; I=45mA
RS = RL = 50
unless otherwise specified
Symbol
min
-
-
typ
20
22
max
-
-
dB
-
-
10
10
-
-
dB
-
-
50
8
8
55
14
20
-
-
-
dB
dBm
Unit
dB
G
RLin
RLout
dG
P1dB
1dBm gain compression
Vd=3V; I=45mA; Vcon=2V
Vd=5V; I=70mA; Vcon=2V
Siemens Aktiengesellschaft
pg. 2/7
17.09.96
HL EH PD21/Gü
GaAs MMIC
Application Circuit
f=800MHz to 2GHz
CGY 120
________________________________________________________________________________________________________
Frequency 900 MHz
L1
27 nH
L2
22 nH
C1
12 pF
C2
12 pF
C3
680 pF
C4
22 pF
C5
R1
470 Ohm
R2
510 Ohm
1.8 GHz
27 nH
22 nH
12 pF
12 pF
680 pF
22 pF
680 pF
470 Ohm
510 Ohm
C1 , C2 Siemens B37490-K5120-J62
R1 Siemens B54102-A1471-J60
L1 Coilcraft 0805CS-270XMBC
C4 Siemens B37940-K5220-J62
R2 Siemens B53102-A1511-J60
L2 Coilcraft 0805CS-220XMBC
C3 , C5 Siemens B37940-K5681-J62
For optimized device performance, Vg has to be adapted (Vg
-1V...0V) to I
45mA at Vd-supply
under condition Vcontrol=+2V.
Gain vs. Vcontrol
Operating Conditions : Vd=3V, Id=45mA, Pin=-20dBm
30
AAAAAA AAAAAA AAAAAA
AAAAAAAA AAAAA
AAAA AAAAA
AAAAAA
AAAAA
AAAAAA A AA
AAAAA
AAAAA
AAAAAA
AAAAAAAAAA AA
AA
AAAAAA AA
AAAA AAAAA
AAAAAA
AAAAAAAAAA
AA AA
AAAAAAAA
AAAAAA
AAAAAA AA
AAAA
10
AAAAAA AA
AAAA
900MHz
AA
AAAAAA AA
AAAAAA
AAAA
0
AAAAAAAAAA
AA
AAAAAAAAAA
AAAAAA
AAAAAA
AAAAAA
AAAAAA
-10
AAAAAA
AAAAAA
1.8GHz
AAAAAA
AAAAAA
AAAAAA
-20
AAAAAA AA
AAAA
AAAAAA AA
AAAA
AAAAAA AA
AAAAAA A AA AAAAAA
AAAAA
AAAAAAAAAA AAAAAA
-30
AAAAAA
AAAAAA AAAAAA
AA
AAAA AAAAAAAAAA
AAAAAAAAAA
AA
AAAAAAAAAA
AA
AAAAAAAAAA
AA
AAAAAAAAAA
AA
-40
AAAAAAAAAA
AA
AAAAAAAAAA
AA
AAAAAAAAAA
AA
AAAAAAAAAA
AA
AAAAAAAAAA
-50
AAAAAA
AA
20
-2
-1,5
-1
-0,5
0
0,5
1
1,5
2
Gain [dB]
Vcontrol [V]
Siemens Aktiengesellschaft
pg. 3/7
17.09.96
HL EH PD21/Gü
GaAs MMIC
Test setup for measuring S-parameters
CGY 120
________________________________________________________________________________________________________
f=10MHz to 3GHz
Ref. Plane
Output
Bias Tee
Ref. Plane
Input
Bias Tee
For optimized device performance, Vg has to be adapted (Vg
-1V...0V) to I
45mA at Vd-supply
under condition Vcontrol=+2V.
Siemens Aktiengesellschaft
pg. 4/7
17.09.96
HL EH PD21/Gü
GaAs MMIC
CGY 120
________________________________________________________________________________________________________
Measurement conditions: Vd=3V, Id=45mA, Vcon=2V
# GHz S MA R 50
!f GHz S11
S21
!
MAG ANG MAG ANG
0.100 0.84 -31.2 4.97 85.4
0.200 0.68 -60.8 11.53 49.2
0.300 0.51 -80.7 14.66 21.6
0.400 0.41 -96.1 16.30 1.7
0.500 0.34 -110.9 17.39 -15.1
0.600 0.29 -127.3 18.25 -30.4
0.700 0.29 -148.9 19.28 -43.7
0.800 0.24 -179.9 19.69 -60.9
0.900 0.21 146.5 19.56 -78.2
1.000 0.20 120.6 18.58 -94.5
1.100 0.23 93.7 17.31 -110.6
1.200 0.26 71.8 15.51 -125.2
1.300 0.29 55.1 13.62 -138.6
1.400 0.32 42.2 11.80 -150.5
1.500 0.35 31.4 10.12 -160.7
1.600 0.37 22.4 8.55 -170.6
1.700 0.36 13.2 7.46 -174.4
1.800 0.36 9.4
6.65 177.5
1.900 0.36 6.6
5.88 170.8
2.000 0.37 3.9
5.20 164.3
2.100 0.37 1.3
4.59 158.3
2.200 0.37 -1.2
4.13 152.9
2.300 0.37 -3.5
3.67 147.5
2.400 0.37 -5.1
3.31 142.6
2.500 0.37 -6.9
2.95 138.3
2.600 0.36 -10.0 2.74 134.1
2.700 0.35 -13.2 2.51 129.8
2.800 0.33 -14.5 2.34 124.8
2.900 0.32 -16.4 2.16 119.1
3.000 0.30 -17.9 1.97 113.8
S12
MAG ANG
0.00512 155.7
0.01753 100.4
0.02396 71.8
0.02601 57.7
0.02739 51.2
0.02791 46.5
0.02873 41.7
0.02804 40.0
0.02608 40.9
0.02722 43.4
0.02705 43.1
0.02537 44.5
0.02493 49.1
0.02380 55.7
0.02389 63.9
0.02441 69.4
0.02464 79.2
0.02872 87.1
0.03307 90.8
0.03675 94.9
0.04202 97.5
0.04801 99.2
0.05315 100.8
0.05874 101.6
0.06440 101.6
0.07210 102.5
0.07855 102.5
0.08686 103.1
0.09724 102.5
0.10700 101.6
S22
MAG ANG
0.31 81.6
0.32
2.9
0.30 -45.5
0.28 -76.5
0.27 -99.4
0.27 -118.4
0.26 -141.0
0.25 -159.3
0.21 -179.2
0.18 169.0
0.16 147.5
0.14 124.4
0.12 100.0
0.12 74.7
0.12 51.9
0.14 31.2
0.12 6.7
0.12 7.1
0.13 2.5
0.14 -0.5
0.15 -2.8
0.16 -4.7
0.17 -8.1
0.17 -10.9
0.17 -12.9
0.17 -14.8
0.16 -18.7
0.15 -20.6
0.15 -21.5
0.15 -25.0
Siemens Aktiengesellschaft
pg. 5/7
17.09.96
HL EH PD21/Gü
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参数对比
与Q62702-G44相近的元器件有:CGY120。描述及对比如下:
型号 Q62702-G44 CGY120
描述 GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication) GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication)
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