BSS 295
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1
G
Type
BSS 295
Type
BSS 295
BSS 295
Pin 2
D
Marking
SS 295
Pin 3
S
V
DS
50 V
I
D
1.4 A
R
DS(on)
0.3
Ω
Package
TO-92
Ordering Code
Q67000-S238
Q67000-S105
Tape and Reel Information
E6288
E6325
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
50
50
Unit
V
V
DS
V
DGR
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
V
GS
V
gs
I
D
±
14
±
20
A
1.4
T
A
= 24 °C
DC drain current, pulsed
I
Dpuls
5.6
T
A
= 25 °C
Power dissipation
P
tot
1
W
T
A
= 25 °C
Semiconductor Group
1
12/05/1997
BSS 295
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Values
-55 ... + 150
-55 ... + 150
≤
125
E
55 / 150 / 56
K/W
Unit
°C
T
j
T
stg
R
thJA
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSS
50
-
1.4
0.1
8
-
10
0.25
0.45
-
2
1
50
100
100
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
0.8
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
-
µA
nA
nA
-
Ω
-
-
0.3
0.5
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 125 °C
V
DS
= 30 V,
V
GS
= 0 V,
T
j
= 25 °C
Gate-source leakage current
I
GSS
R
DS(on)
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 1.4 A
V
GS
= 4.5 V,
I
D
= 1.4 A
Semiconductor Group
2
12/05/1997
BSS 295
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.5
1.6
320
110
50
-
S
pF
-
425
170
75
ns
-
8
12
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 1.4 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
Ω
Rise time
t
r
-
20
30
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
Ω
Turn-off delay time
t
d(off)
-
120
160
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
Ω
Fall time
t
f
-
85
115
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
G
= 50
Ω
Semiconductor Group
3
12/05/1997
BSS 295
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
typ.
max.
Unit
A
-
-
-
-
1
1.4
5.6
V
-
1.5
I
SM
V
SD
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 2.8 A
Semiconductor Group
4
12/05/1997
BSS 295
Power dissipation
P
tot
=
ƒ
(T
A
)
Drain current
I
D
=
ƒ
(T
A
)
parameter:
V
GS
≥
10 V
1.5
A
1.3
1.2
W
1.0
P
tot
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
°C
160
I
D
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
°C
160
T
A
T
A
Safe operating area
I
D
=f(V
DS
)
parameter :
D
= 0.01,
T
C
=25°C
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(T
j
)
60
V
58
V
(BR)DSS
57
56
55
54
53
52
51
50
49
48
47
46
45
-60
-20
20
60
100
°C
160
T
j
Semiconductor Group
5
12/05/1997
