TRANSISTOR MODULE
QCA75AA100
UL;E76102 M
QCA75AA100
is a dual Darlington power transistor module which has series- connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
I
C
75A, V
CEX
1000V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit
A
Maximum Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Mounting M6
Terminal M5
A.C.1minute
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
Typical Value
T
C
25
40
V
BE
2V
Conditions
Ratings
QCA75AA100
1000
1000
7
75
75
4
500
150
40
125
2500
4.7 48
2.7 28
250
Tj 25
Unit
V
V
V
A
A
A
W
V
N m
f
B
g
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEX
SUS
Tj 25
Conditions
V
CB
1000V
V
EB
7V
Ic 15A I
B2
4A
1000
75
100
2.50
3.50
2.50
Vcc 600V Ic 75A
1.5A
I
B1
1.5A I
B2
Ic 75A
Transistor part
Diode part
15.00
3.00
1.80
0.25
1.20
V
/W
s
V
V
Ic 75A V
CE
2.8V
Ic 75A V
CE
5V
Ic 75A I
B
1.5A
Ic 75A I
B
1.5A
Ratings
Min.
Max.
1.00
200
Unit
mA
mA
V
Item
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Sustaning Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
h
FE
V
CE(sat)
V
BE(sat)
ton
ts
tf
V
ECO
Rth(j-c)
11
QCA75AA100
12
TRANSISTOR MODULE
QCA75AA120
UL;E76102 M
QCA75AA120
is a dual Darlington power transistor module which has series- connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
I
C
75A, V
CEX
1200V
Low saturation voltage for higher efficiency.
High DC current gain h
FE
Isolated mounting base
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit
A
Maximum Ratings
Symbol
V
CBO
V
CEX
V
EBO
I
C
I
C
I
B
P
T
T
j
Tstg
V
ISO
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Mounting M6
Terminal M5
A.C.1minute
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
Typical Value
T
C
25
40
V
BE
2V
Conditions
Ratings
QCA75AA120
1200
1200
10
75
75
4
500
150
40
125
2500
4.7 48
2.7 28
250
Tj 25
Unit
V
V
V
A
A
A
W
V
N m
( f
B)
g
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
CEX
SUS
Tj 25
Conditions
V
CB
1200V
V
EB
10V
Ic 15A I
B2
3A
1200
75
3.00
3.50
2.50
Vcc 600V Ic 75A
1.5A
I
B1
1.5A I
B2
Ic 75A
Transistor part
Diode part
15.00
3.00
1.80
0.25
1.20
V
/W
s
V
V
Ic 75A V
CE
5V
Ic 75A I
B
1.5A
Ic 75A I
B
1.5A
Ratings
Min.
Max.
1.00
300
Unit
mA
mA
V
Item
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Sustaning Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
h
FE
V
CE(sat)
V
BE(sat)
ton
ts
tf
V
ECO
Rth(j-c)
13
QCA75AA120
14
