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QEC113

Infrared Emitters 0.07mW 1.5V IR LED

器件类别:光电子/LED    光电   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:

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器件参数
参数名称
属性值
Brand Name
Fairchild Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Fairchild
零件包装代码
TOPLOOKER
包装说明
PLASTIC PACKAGE-2
针数
2
制造商包装代码
T-1 , 3MM LED
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
SINGLE
最大正向电流
0.05 A
JESD-609代码
e3
功能数量
1
最高工作温度
100 °C
最低工作温度
-40 °C
光电设备类型
INFRARED LED
峰值波长
940 nm
形状
ROUND
尺寸
2.95 mm
端子面层
Matte Tin (Sn)
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QEC112, QEC113 — Plastic Infrared Light Emitting Diode
August 2008
QEC112, QEC113
Plastic Infrared Light Emitting Diode
Features
PACKAGE DIMENSIONS
λ
= 940nm
Chip material = GaAs
Package type: T-1 (3 mm)
Can be used with QSCXXX Photosensor
Narrow Emission Angle, 8° at 80% intensity
High Output Power
Package material and color: Clear, peach tinted plastic
Description
The QEC11X is an 940nm GaAs LED encapsulated in a
clear peach tinted, plastic T-1 package.
Package Dimensions
0.116 (2.95)
REFERENCE
SURFACE
0.052 (1.32)
0.032 (0.082)
0.193 (4.90)
0.030 (0.76)
NOM
0.800 (20.3)
MIN
0.050 (1.27)
CATHODE
0.100 (2.54)
NOM
Schematic
ANODE
0.155 (3.94)
CATHODE
0.018 (0.46)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (.25) on all non-nominal dimensions
unless otherwise specified.
©2005 Fairchild Semiconductor Corporation
QEC112, QEC113 Rev. 1.0.2
www.fairchildsemi.com
QEC112, QEC113 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Operating Temperature
Storage Temperature
Parameter
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
100
Units
°C
°C
°C
°C
mA
V
mW
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
(T
A
= 25°C)
Symbol Parameter
λ
PE
TC
λ
1
/2
V
F
TC
VF
I
R
I
E
I
E
TC
IE
t
r
t
f
C
j
Peak Emission Wavelength
Temperature Coefficient
Emission Angle
Forward Voltage
Temperature Coefficient
Reverse Current
Radiant Intensity QEC112
Radiant Intensity QEC113
Temperature Coefficient
Rise Time
Fall Time
Junction Capacitance
V
R
= 0V
I
F
= 100mA
V
R
= 5V
I
F
= 100mA, tp = 20ms
I
F
= 100mA, tp = 20ms
6
14
40
-0.7
800
800
14
I
F
= 100mA
I
F
= 100mA, tp = 20ms
-2
10
30
Test Conditions
I
F
= 100mA
Min.
Typ.
940
0.3
18
Max.
Units
nm
nm / °C
°
1.5
V
mV / °C
µA
mW/sr
mW/sr
% / °C
ns
ns
pF
©2005 Fairchild Semiconductor Corporation
QEC112, QEC113 Rev. 1.0.2
www.fairchildsemi.com
2
QEC112, QEC113 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
Fig. 1 Normalized Intensity vs. Wavelength
1.0
0.9
975
Fig. 2 Peak Wavelength vs. Ambient Temperature
λ
PE
– PEAK EMISSION WAVELENGTH
I
F
= 20mA DC
970
965
960
955
950
945
940
935
NORMALIZED INTENSITY
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
700
750
800
850
900
950
1,000
1,050
0
10
20
30
40
50
60
70
80
90
100
λ
(nm)
T
A
– AMBIENT TEMPERTURE (°C)
Fig. 3 Normalized Radiant Intensity vs. Forward Current
10
Fig. 4 Normalized Radient Intensity vs. Ambient Temperature
1.4
I
e
– NORMALIZED RADIANT INTENSITY
I
e
– NORMALIZED RADIANT INTENSITY
Normalized to:
I
F
= 100mA Pulsed
t
PW
= 20mS
Duty Cycle = 4%
T
A
= 25°C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Normalized to:
I
F
= 20mA Pulsed
t
PW
= 20mS
Duty Cycle = 4%
T
A
= 25°C
1
0.1
10
100
1000
10
20
30
40
50
60
70
80
90
100
I
F
– FORWARD CURRENT (mA)
T
A
– AMBIENT TEMPERTURE (°C)
Fig. 5 Forward Voltage vs. Forward Current
3.5
I
F
Pulsed
t
PW
= 20mS
Duty Cycle = 4%
T
A
= 25°C
1.55
Fig. 6 Forward Voltage vs. Ambient Temperature
I
F
= 20mA Pulsed
t
PW
= 20mS
Duty Cycle = 4%
V
F
– FORWARD VOLTAGE (V)
3.0
V
F
– FORWARD VOLTAGE (V)
1.50
1.45
2.5
1.40
2.0
1.35
1.5
1.30
1.0
10
1.25
100
1000
0
10
20
30
40
50
60
70
80
90
100
I
F
– FORWARD CURRENT (mA)
T
A
– AMBIENT TEMPERTURE (°C)
©2005 Fairchild Semiconductor Corporation
QEC112, QEC113 Rev. 1.0.2
www.fairchildsemi.com
3
QEC112, QEC113 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
(Continued)
Fig. 8 Coupling Characteristics of QEC11X and QSC11X
I
C
(ON) – NORMALIZED COLLECTOR CURRENT
Fig. 7 Radiation Diagram
110°
120°
130°
140°
150°
160°
170°
180°
1.0
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
1.0
1.0
Normalized to:
d = 0 inch
I
F
Pulsed
t
PW
= 100µs
Duty Cycle = 0.1%
V
CC
= 5V
R
L
= 100Ω
T
A
= 25°C
0.8
0.6
0.4
0.2
I
F
= 100 mA
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
I
F
= 20 mA
0.0
0
1
2
3
4
5
6
7
8
LENS TIP SEPARATION (inches)
©2005 Fairchild Semiconductor Corporation
QEC112, QEC113 Rev. 1.0.2
www.fairchildsemi.com
4
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参数对比
与QEC113相近的元器件有:QEC113C6R0_Q。描述及对比如下:
型号 QEC113 QEC113C6R0_Q
描述 Infrared Emitters 0.07mW 1.5V IR LED Infrared Emitters Gaas infr Emitting
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