MITSUBISHI TRANSISTOR MODULES
QM30CY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30CY-H
•
•
•
•
•
I
C
Collector current ..........................
30A
V
CEX
Collector-emitter voltage ...........
600V
h
FE
DC current gain...............................
75
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
UPS, CVCF
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94
(7)
20
10.5 13 10.5
80
20
27
B
2
E
2
(7)
φ6.5
C
2
E
1
E
2
B
2
E
2
C
1
34
C
2
E
1
E
2
C
1
12
E
1
B
1
E
1
B
1
Tab#110,
t=0.5
6.5
M5
31
LABEL
(8)
22.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30CY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
600
600
600
7
30
30
250
1.8
300
–40~+150
–40~+125
Charged part to case, AC for 1 minute
Main terminal screw M5
2500
1.47~1.96
15~20
1.96~2.94
20~30
210
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Switching time
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
(Tj=25°C, unless otherwise noted)
Limits
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V, Emitter open
V
EB
=7V
I
C
=30A, I
B
=0.4A
–I
C
=30A (diode forward voltage)
I
C
=30A, V
CE
=2V/5V
Min.
—
—
—
—
—
—
75/100
—
V
CC
=300V, I
C
=30A, I
B1
=–I
B2
=0.6A
—
—
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.0
2.5
1.85
—
1.5
12
3.0
0.5
2.0
0.15
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/
W
°C/
W
°C/
W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30CY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
100
T
j
=25°C
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
10
0
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT I
C
(A)
V
CE
=5.0V
80
I
B
=2.0A
60
I
B
=1.0A
I
B
=0.5A
40
I
B
=0.3A
20
I
B
=0.1A
DC CURRENT GAIN h
FE
V
CE
=2.0V
0
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT I
C
(A)
BASE CURRENT I
B
(A)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
1.0
SATURATION VOLTAGE V
CE (sat)
, V
BE (sat)
(V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
10
0
V
CE
=2.0V
T
j
=25°C
V
BE(sat)
V
CE(sat)
I
B
=0.4A
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
1.4
1.8
2.2
2.6
3.0
BASE-EMITTER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
CE
(sat)
(V)
5
T
j
=25°C
T
j
=125°C
4
10
1
7
5
4
3
2
10
0
7
5
4
3
2
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
t
on
, t
s
, t
f
(µs)
t
s
3
SWITCHING TIME
2
I
C
=30A
t
on
t
f
1
I
C
=10A
I
C
=20A
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
V
CC
=300V
I
B1
=–I
B2
=0.6A
2 3 4 5 7 10
2
0
10
–2
2 3 4 5 7 10
–1
2 3 4 5 7 10
0
10
–1
10
0
BASE CURRENT I
B
(A)
COLLECTOR CURRENT
I
C
(A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30CY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
2
t
s
, t
f
(µs)
10
1
7
5
4
3
2
10
0
7
5
4
3
10
–1
2 3 4 5 7 10
0
V
CC
=300V
I
B1
=0.6A
I
C
=30A
T
j
=25°C
T
j
=125°C
REVERSE BIAS SAFE OPERATING AREA
70
COLLECTOR CURRENT I
C
(A)
60
50
T
j
=125°C
40
30
20
10
0
0
100 200 300 400 500 600 700
V
CE
(V)
I
B2
=–1A
–3A
–5A
t
s
SWITCHING TIME
t
f
2 3 4 5 7 10
1
BASE REVERSE CURRENT –I
B2
(A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
T
C
=25°C
2
NON–REPETITIVE
10
–1
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
10
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
100
DERATING FACTOR OF F. B. S. O. A.
10
COLLECTOR CURRENT I
C
(A)
0µ
s
DERATING FACTOR (%)
90
80
70
60
50
40
30
20
10
0
0
20
40
60
COLLECTOR
DISSIPATION
DC
SECOND
BREAKDOWN
AREA
COLLECTOR REVERSE CURRENT –I
C
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
0.5
0.4
Z
th (j–c)
(°C/ W)
50
0µ
s
1m
s
80 100 120 140 160
T
C
(°C)
CASE TEMPERATURE
10
2
7
5
4
3
2
10
1
7
5
4
3
2
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
0.3
0.2
0.1
0
10
–3
2 3 5 710
–2
2 3 5 710
–1
2 3 5 7 10
0
TIME (s)
T
j
=25°C
T
j
=125°C
0.8
1.2
1.6
2.0
2.4
10
0
0.4
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30CY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
SURGE COLLECTOR REVERSE CURRENT
–I
CSM
(A)
500
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10
2
7
5
3
2
10
2
V
CC
=300V
I
B1
=–I
B2
=0.6A
T
j
=25°C
T
j
=125°C
400
I
rr
200
100
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
10
0
10
0
7
5 Q
rr
3
t
rr
2
–1
10
10
–1
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT I
F
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10
0
2 3 4 5 710
1
2 3 4 5
2.0
1.6
Z
th (j–c)
(°C/ W)
1.2
0.8
0.4
0
10
–3
2 3 4 5 7 10
–2
2 3 4 5 710
–1
2 3 4 5 7 10
0
TIME (s)
Feb.1999
t
rr
(µs)
300
I
rr
(A), Q
rr
(µc)
10
1
7
5
3
2
10
1
微控制器 MCU
