PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD122
PACKAGE DIMENSIONS
0.195 (4.95)
QSD123
QSD124
REFERENCE
SURFACE
0.305 (7.75)
0.800 (20.3)
MIN
EMITTER
0.040 (1.02)
NOM
COLLECTOR
SCHEMATIC
0.500 (1.25)
0.100 (2.54) NOM
COLLECTOR
0.240 (6.10)
0.215 (5.45)
NOTES:
0.020 (0.51)
SQ. (2X)
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
EMITTER
DESCRIPTION
The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.
FEATURES
• NPN Silicon Phototransistor
• Package Type: T-1 3/4
• Notched Emitter: QED12X/QED22X/QED23X
• Narrow Reception Angle: 24°C
• Daylight Filter
• Package Material and Color: Black Epoxy
• High Sensitivity
2001 Fairchild Semiconductor Corporation
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PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD122
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
(1)
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CE
V
EC
P
D
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
30
5
100
Unit
°C
°C
°C
°C
V
V
mW
QSD123
QSD124
NOTE:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16”
(1.6mm) minimum from housing.
5.
!
= 880 nm, AlGaAs.
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25°C)
SYMBOL
MIN
TYP
MAX
UNITS
Peak Sensitivity Wavelength
Reception Angle
Collector Emitter Dark Current
Collector Emitter Breakdown
Emitter Collector Breakdown
On-State Collector Current
(5)
QSD122
QSD123
QSD124
Saturation Voltage
(5)
Rise Time
Fall Time
V
CE
= 10 V, E
e
= 0
I
C
= 1 mA
I
E
= 100 µA
!
PS
"
I
CEO
BV
CEO
BV
ECO
—
—
—
30
5
1.00
4.00
6.00
—
—
—
880
±12
—
—
—
—
—
—
—
7
7
—
—
100
—
—
6.00
16.00
—
0.4
—
—
nm
Deg.
nA
V
V
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
E
e
= 0.5 mW/cm
2
, I
C
= 0.5 mA
V
CC
= 5 V, R
L
= 100 V I
C
= 0.2 mA
I
C (ON)
V
CE (SAT)
t
r
t
f
mA
V
µs
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PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD122
Figure 1. Light Current vs. Radiant Intensity
100
QSD123
100
90
80
QSD124
Figure 2. Angular Response Curve
110
120
70
60
50
40
30
20
10
0
1.0
I
C(ON)
- Light Current (mA)
130
10
140
150
160
1
170
180
1.0
0.1
0.0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
0.2
0.4
0.6
0.8
1.0
E
e
- Radiant Intensity (mW/cm
2
)
Figure 3. Dark Current vs. Collector - Emitter Voltage
10
1
10
1
Figure 4. Light Current vs. Collector - Emitter Voltage
Ie=1mW/cm
2
Ie=0.5mW/cm
2
Ie=0.2mW/cm
2
Ie=0.1mW/cm
2
10
-1
I
CEO
- Dark Current (nA)
10
0
I
L
- Normalized Light Current
10
0
10
-1
10
-2
10
-2
Normalized to:
V
CE
= 5V
Ie = 0.5mW/cm
2
T
A
= 25
o
C
10
-3
0
5
10
15
20
25
30
10
-3
0.1
1
10
V
CE
- Collector-Emitter Voltage (V)
V
CE
- Collector-Emitter Voltage (V)
Figure 5. Dark Current vs. Ambient Temperature
10
4
I
CEO
- Normalized Dark Current
Normalized to:
V
CE
= 25V
10
3
T
A
= 25
o
C
10
2
V
CE
=25V
V
CE
=10V
10
1
10
0
10
-1
-40
-20
0
20
40
60
80
100
o
T
A
- Ambient Temperature ( C)
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PLASTIC SILICON INFRARED
PHOTOTRANSISTOR
QSD122
QSD123
QSD124
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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