EVALUATION LABORATORY
Origin
-
PAR 327
Total Pages
Provisional Data
Author
N. Tarling
Checked
Abstract
The R295CH36-40 Distributed Gate thyristor range features regenerative and interdigitated gating on a
50mm diameter, silicon slice (manufacturing reference RSTACH) mounted in a cold weld capsule. Low
turn-on losses make it suitable for chopper, inverter and pulse applications.
Provisional Data. Types R295CH36 to R295CH40 Issue 1
The information contained herein is confidential and is protected by Copyright. The information may not be
used or disclosed except with the written permission of and in the manner permitted by the proprietors
Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not
necessarily subject to the conditions and limits contained in this report.
Issue 1
First issue - Advance data.
Page i
Summary of changes to previous issue.
Distributed Gate Thyristor
Types R295CH36 to R295CH40
-
15
Approved
August, 2000
Rating Report
-
Issue 1
Date
-
30 August, 2000
Contents
Abstract......................................................................................................................................................... i
Contents....................................................................................................................................................... ii
Introduction ................................................................................................................................................. ii
Absolute Maximum Ratings ....................................................................................................................... 1
Characteristics ............................................................................................................................................ 2
Notes on Ratings and Characteristics ...................................................................................................... 3
1.0 Voltage Grade Table ........................................................................................................................... 3
2.0 Extension of Voltage Grades............................................................................................................... 3
3.0 Extension of Turn-off Time .................................................................................................................. 3
4.0 Repetitive dv/dt .................................................................................................................................... 3
5.0 De-rating Factor................................................................................................................................... 3
6.0 Rate of rise of on-state current............................................................................................................ 3
7.0 Square wave ratings ............................................................................................................................ 3
8.0 Duty cycle lines .................................................................................................................................... 3
9.0 Maximum Operating Frequency .......................................................................................................... 3
10.0 On-State Energy per Pulse Characteristics....................................................................................... 4
11.0 Reverse recovery ratings................................................................................................................... 4
12.0 Reverse Recovery Loss .................................................................................................................... 4
12.1 Determination by Measurement ....................................................................................................................................... 4
12.2 Determination without Measurement ............................................................................................................................... 5
NOTE 1-
Reverse Recovery Loss by Measurement ................................................................................. 5
13.0 Gate Drive ......................................................................................................................................... 5
14.0 Computer Modelling Parameters....................................................................................................... 6
14.1 Calculating V
T
using ABCD Coefficients .......................................................................................................................... 6
14.2 D.C. Thermal Impedance Calculation .............................................................................................................................. 6
14.3 Recovery parameter estimation ....................................................................................................................................... 7
Curves .......................................................................................................................................................... 8
Figure 1 - On-state characteristics of Limit device .................................................................................... 8
Figure 2 - Transient thermal impedance ................................................................................................... 8
Figure 3 - Gate characteristics - Trigger limits .......................................................................................... 8
Figure 4 - Gate characteristics - Power curves ......................................................................................... 8
Figure 5 - Total recovered charge, Q
rr
....................................................................................................... 9
Figure 6 - Recovered charge, Q
ra
(50% chord) ......................................................................................... 9
Figure 7 - Peak reverse recovery current, I
rm
............................................................................................ 9
Figure 8 - Maximum recovery time, t
rr
(50% chord)................................................................................... 9
Figure 9 - Reverse recovery energy per pulse ........................................................................................ 10
Figure 10 - Sine wave energy per pulse .................................................................................................. 10
Figure 11 - Sine wave frequency ratings, 55°C heatsink......................................................................... 10
Figure 12 - Sine wave frequency ratings, 85°C heatsink......................................................................... 10
Figure 13 - Square wave frequency ratings, 55°C heatsink, 100A/µs ..................................................... 11
Figure 14 - Square wave frequency ratings, 55°C heatsink, 500A/µs ..................................................... 11
Figure 15 - Square wave frequency ratings, 85°C heatsink, 100A/µs ..................................................... 11
Figure 16 - Square wave frequency ratings, 85°C heatsink, 500A/µs ..................................................... 11
Figure 17 - Square wave energy per pulse, 100A/µs .............................................................................. 12
Figure 18 - Square wave energy per pulse, 500A/µs .............................................................................. 12
2
Figure 19 - Maximum surge and I t Ratings ............................................................................................ 12
Outline Drawing & Ordering Information................................................................................................ 13
Introduction
Provisional Data. Types R295CH36 to R295CH40 Issue 1
The R295 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. They are therefore suitable for
medium current, medium frequency applications.
Page ii
August, 2000
Provisional Data
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
MAXIMUM
LIMITS
3600-4000
3600-4000
3600-4000
3700-4100
Distributed Gate Thyristor
Types R295CH36 to R295CH40
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
2
It
2
It
di
T
/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
Mean on-state current, T
sink
=55°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V,
(note 5)
2
I t capacity for fusing t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
2
I t capacity for fusing t
p
=10ms, V
RM
≤10V,
(note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
Page 1 of 13
OTHER RATINGS
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
7)
Rated V
DRM
.
UNITS
V
V
V
V
WESTCODE
Date:- 30 Aug, 2000
Data Sheet Issue:- 1
MAXIMUM
LIMITS
890
610
365
1755
1525
10.9
12
5
5.94×10
5
7.20×10
1000
1500
5
2
30
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
2
As
2
As
A/µs
A/µs
V
W
W
V
°C
°C
August, 2000
WESTCODE
Positive development in power electronics
Characteristics
R295CH36 to R295CH40
V
TM
V
0
r
S
dv/dt
I
DRM
I
RRM
V
GT
I
GT
I
H
Q
ra
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state
voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Recovered charge, 50% Chord
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.98
1.516
0.8
200
100
I
TM
=1830A
V
D
=80% V
DRM
Rated V
DRM
-
100
3.0
Rated V
RRM
-
T
j
=25°C
-
300
T
j
=25°C
V
D
=10V, I
T
=3A
-
1000
-
T
j
=25°C
1750
-
350
-
550
-
0.024
Double side cooled
-
0.049
26
-
Single side cooled
-
510
Page 2 of 13
t
q
Turn-off time
-
-
-
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V, V
dr
=33%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V, V
dr
=33%V
DRM
, dV
dr
/dt=200V/µs
19
-
R
θ
F
W
t
Thermal resistance, junction to
heatsink
Mounting force
Weight
Notes:-
1)
Unless otherwise indicated T
j
=125
°
C.
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
August, 2000
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS
(Note 1)
UNITS
V
V
mΩ
V/µs
mA
mA
V
mA
mA
µC
µs
K/W
K/W
kN
g
WESTCODE
Positive development in power electronics
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade 'H'
36
38
40
V
DRM
V
DSM
V
RRM
V
3600
3800
4000
V
RSM
V
3700
3900
4100
R295CH36 to R295CH40
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other t
q
/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
Page 3 of 13
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25 C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
9.0 Maximum Operating Frequency
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(t
q
) and for the off-state voltage to reach full value (t
v
), i.e.
f
max
=
1
t
pulse
+
t
q
+
t
v
Provisional Data Sheet. Types R295CH36 to R295CH40 Issue 1
o
V
D
V
R
DC V
1900
1960
2000
August, 2000
工控电子
