Note: If the working voltage (V) is lower than the rated
0.010 µF 3.5 7.5 7.2 5.0
400
320 e3
voltage (V
R
), the capacitor may work at higher dv/dt.
0.015 µF 4.5 9.5 7.2 5.0
400
320 e3
In this case the maximum value allowed is obtained
0.022 µF 4.5 9.5 7.2 5.0
400
320 e3
multiplying the above value (see table dv/dt) with the
0.033 µF 5.0 10.0 7.2 5.0
400
320 e3
ratio V
R
/V.
0.047 µF 6.0 11.0 7.2 5.0
400
320 e3
The pulse characteristic K
0
depends on the voltage
wave-form and in any case it cannot overcome the
Mechanical version and packaging (Table1)
Internal use
value given in the above table.
Tolerance: J (±5%); K (±10%); M (±20%)
R82MC2100
--
5
--
R82MC2150
--
5
--
R82MC2220
--
5
--
R82MC2330
--
5
--
R82MC2470
--
5
--
27
09/2008
Not for new design. Use new F611-F612 Series.
MeTAllIZeD POlyeSTeR FIlM CAPACITOR
D.C. MulTIPuRPOSe APPlICATIONS
p = 5 mm
PRoDUCT CoDe:
R82
MKT Series
R82
eleCTRICAl ChARACTeRISTICS
Rated voltage (V
R
):
Rated temperature (T
R
):
50 Vdc
250 Vdc
+85 °C
63 Vdc
400 Vdc
100 Vdc
TeST MeThOD AND PeRFORMANCe
Damp heat, steady state:
Test conditions
Temperature:
Relative humidity (RH):
Test duration:
Performance
Capacitance change |∆C/C|:
DF change (∆tgδ):
Insulation resistance:
Temperature derated voltage:
for temperatures between +85°C and +105°C a decreasing
factor of 1.25% per degree °C on the rated voltage V
R
(d.c.
and a.c.) has to be applied.
Capacitance range:
1000pF to 4.7µF
Capacitance values:
e6 series (IeC 60063 Norm).
Capacitance tolerances (measured at 1 khz):
±5% (J); ±10% (K); ±20% (M).
Total self-inductance (l):
≈7nH
max 1 nH per 1 mm lead and capacitor length.
Dissipation factor (DF):
tgδ 10
-4
at +25°C ±5°C
kHz
1
10
100
C
≤
0.1µF
C > 0.1µF
+40°C±2°C
93% ±2%
56 days
≤ 5%
≤ 50x10
-4
at 1kHz
≥ 50% of initial limit.
≤
80
≤
120
≤
250
≤
80
≤
120
endurance:
Test conditions
+105°C ±2°C
Temperature:
Test duration:
2000 h
Voltage applied:
1.25xV
C
Performance
Capacitance change |∆C/C|: ≤ 5%
DF change (∆tgδ): ≤ 30x10
-4
at 10kHz for C≤1µF
for C>1µF
≤ 20x10
-4
at 1kHz
Insulation resistance:
≥50% of initial limit.
Resistance to soldering heat:
Test conditions
Solder bath temperature:
+260°C±5°C
Dipping time (with heat screen):10 s ±1 s
Performance
Capacitance change |∆C/C|: ≤2%
DF change (∆tgδ): ≤ 30x10
-4
at 10kHz for C≤ 1µF
≤ 20x10
-4
at 1kHz for C> 1µF
Insulation resistance:
≥ initial limit.
long term stability
(after two years):
Storage:
standard environmental conditions (see page
12).
Performance
Capacitance change |∆C/C|: ≤ 3% for C≤ 0.1µF
≤ 2% for C> 0.1µF
RelIABIlITy:
Reference MIL HDB 217
Application conditions:
+40°C±2°C
Temperature:
Voltage:
0.5xV
R
Failure rate:
≤ 1 FIT
(1 FIT = 1x10
-9
failures/components x h)
Failure criteria:
(according to DIN 44122)
Short or open circuit
Capacitance change |∆C/C|: > 10%
DF change (∆tgδ):
> 2 x initial limit.
Insulation resistance:
< 0.005 x initial limit.
Insulation resistance:
Test conditions
Temperature:
Voltage charge time:
Voltage charge:
+25°C±5°C
1 min
50 Vdc for V
R
<100 Vdc
100 Vdc for V
R
≥100 Vdc
Performance
For V
R
≤100 Vdc
≥ 15000 MΩ for C ≤ 0.33µF
≥ 5000 s
for C > 0.33µF
and
≤1µF
≥ 1000 s
for C > 1µF
For V
R
>100 Vdc
≥ 30000 MΩ
*Typical
value
Test voltage between terminations:
1.4xV
R
applied for 2 s at +25°C±5°C.
09/2008
28
Not for new design. Use new F611-F612 Series.
MeTAllIZeD POlyeSTeR FIlM CAPACITOR
D.C. MulTIPuRPOSe APPlICATIONS
p = 5 mm
PRoDUCT CoDe:
R82
MKT Series
R82
MAX. VoLTAGe (Vr.m.s.) VeRSUS FReQUeNCY (sinusoidal wave-form / Th
≤
40°C)
29
09/2008
Not for new design. Use new F611-F612 Series.
MeTAllIZeD POlyeSTeR FIlM CAPACITOR
D.C. MulTIPuRPOSe APPlICATIONS
p = 5 mm
PRoDUCT CoDe:
R82
MKT Series
R82
MAX. CURReNT (Ir.m.s.) VeRSUS FReQUeNCY (sinusoidal wave-form / Th
≤
40°C)
1
Statements of suitability for certain applications are based on our knowledge of typical operating conditions for such applications, but are not intended to constitute –
and we specifically disclaim – any warranty concerning suitability for a specific customer application or use. This Information is intended for use only by customers who
have the requisite experience and capability to determine the correct products for their application. Any technical advice inferred from this Information or otherwise
provided by us with reference to the use of our products is given gratis, and we assume no obligation or liability for the advice given or results obtained.
英特尔 (Intel)是矽谷和科技产业的先驱厂商，1981年8月IBM宣布其个人电脑( PC )将采用 英特尔 的8088和8086处理器，让 英特尔 成为过去30多年来推动 PC 产业成长的重要力量。下面就随网络通信小编一起来了解一下相关内容吧。 根据时代杂志(Time)报导，传统 PC 销售量在2005年左右达到巅峰，全球共售出近4亿台，但到了2011年，PC出货量开始从最高点下...[详细]
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