Note: If the working voltage (V) is lower than the rated
0.010 µF 3.5 7.5 7.2 5.0
400
320 e3
voltage (V
R
), the capacitor may work at higher dv/dt.
0.015 µF 4.5 9.5 7.2 5.0
400
320 e3
In this case the maximum value allowed is obtained
0.022 µF 4.5 9.5 7.2 5.0
400
320 e3
multiplying the above value (see table dv/dt) with the
0.033 µF 5.0 10.0 7.2 5.0
400
320 e3
ratio V
R
/V.
0.047 µF 6.0 11.0 7.2 5.0
400
320 e3
The pulse characteristic K
0
depends on the voltage
wave-form and in any case it cannot overcome the
Mechanical version and packaging (Table1)
Internal use
value given in the above table.
Tolerance: J (±5%); K (±10%); M (±20%)
R82MC2100
--
5
--
R82MC2150
--
5
--
R82MC2220
--
5
--
R82MC2330
--
5
--
R82MC2470
--
5
--
27
09/2008
Not for new design. Use new F611-F612 Series.
MeTAllIZeD POlyeSTeR FIlM CAPACITOR
D.C. MulTIPuRPOSe APPlICATIONS
p = 5 mm
PRoDUCT CoDe:
R82
MKT Series
R82
eleCTRICAl ChARACTeRISTICS
Rated voltage (V
R
):
Rated temperature (T
R
):
50 Vdc
250 Vdc
+85 °C
63 Vdc
400 Vdc
100 Vdc
TeST MeThOD AND PeRFORMANCe
Damp heat, steady state:
Test conditions
Temperature:
Relative humidity (RH):
Test duration:
Performance
Capacitance change |∆C/C|:
DF change (∆tgδ):
Insulation resistance:
Temperature derated voltage:
for temperatures between +85°C and +105°C a decreasing
factor of 1.25% per degree °C on the rated voltage V
R
(d.c.
and a.c.) has to be applied.
Capacitance range:
1000pF to 4.7µF
Capacitance values:
e6 series (IeC 60063 Norm).
Capacitance tolerances (measured at 1 khz):
±5% (J); ±10% (K); ±20% (M).
Total self-inductance (l):
≈7nH
max 1 nH per 1 mm lead and capacitor length.
Dissipation factor (DF):
tgδ 10
-4
at +25°C ±5°C
kHz
1
10
100
C
≤
0.1µF
C > 0.1µF
+40°C±2°C
93% ±2%
56 days
≤ 5%
≤ 50x10
-4
at 1kHz
≥ 50% of initial limit.
≤
80
≤
120
≤
250
≤
80
≤
120
endurance:
Test conditions
+105°C ±2°C
Temperature:
Test duration:
2000 h
Voltage applied:
1.25xV
C
Performance
Capacitance change |∆C/C|: ≤ 5%
DF change (∆tgδ): ≤ 30x10
-4
at 10kHz for C≤1µF
for C>1µF
≤ 20x10
-4
at 1kHz
Insulation resistance:
≥50% of initial limit.
Resistance to soldering heat:
Test conditions
Solder bath temperature:
+260°C±5°C
Dipping time (with heat screen):10 s ±1 s
Performance
Capacitance change |∆C/C|: ≤2%
DF change (∆tgδ): ≤ 30x10
-4
at 10kHz for C≤ 1µF
≤ 20x10
-4
at 1kHz for C> 1µF
Insulation resistance:
≥ initial limit.
long term stability
(after two years):
Storage:
standard environmental conditions (see page
12).
Performance
Capacitance change |∆C/C|: ≤ 3% for C≤ 0.1µF
≤ 2% for C> 0.1µF
RelIABIlITy:
Reference MIL HDB 217
Application conditions:
+40°C±2°C
Temperature:
Voltage:
0.5xV
R
Failure rate:
≤ 1 FIT
(1 FIT = 1x10
-9
failures/components x h)
Failure criteria:
(according to DIN 44122)
Short or open circuit
Capacitance change |∆C/C|: > 10%
DF change (∆tgδ):
> 2 x initial limit.
Insulation resistance:
< 0.005 x initial limit.
Insulation resistance:
Test conditions
Temperature:
Voltage charge time:
Voltage charge:
+25°C±5°C
1 min
50 Vdc for V
R
<100 Vdc
100 Vdc for V
R
≥100 Vdc
Performance
For V
R
≤100 Vdc
≥ 15000 MΩ for C ≤ 0.33µF
≥ 5000 s
for C > 0.33µF
and
≤1µF
≥ 1000 s
for C > 1µF
For V
R
>100 Vdc
≥ 30000 MΩ
*Typical
value
Test voltage between terminations:
1.4xV
R
applied for 2 s at +25°C±5°C.
09/2008
28
Not for new design. Use new F611-F612 Series.
MeTAllIZeD POlyeSTeR FIlM CAPACITOR
D.C. MulTIPuRPOSe APPlICATIONS
p = 5 mm
PRoDUCT CoDe:
R82
MKT Series
R82
MAX. VoLTAGe (Vr.m.s.) VeRSUS FReQUeNCY (sinusoidal wave-form / Th
≤
40°C)
29
09/2008
Not for new design. Use new F611-F612 Series.
MeTAllIZeD POlyeSTeR FIlM CAPACITOR
D.C. MulTIPuRPOSe APPlICATIONS
p = 5 mm
PRoDUCT CoDe:
R82
MKT Series
R82
MAX. CURReNT (Ir.m.s.) VeRSUS FReQUeNCY (sinusoidal wave-form / Th
≤
40°C)
1
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and we specifically disclaim – any warranty concerning suitability for a specific customer application or use. This Information is intended for use only by customers who
have the requisite experience and capability to determine the correct products for their application. Any technical advice inferred from this Information or otherwise
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