MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA45H7687M1
BLOCK DIAGRAM
2
3
RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier
Module for 12.8-volt mobile radios that operate in the 764- to
870-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(V
GG1
=V
GG2
=0V), only a small
leakage current flows into the drain and the nominal output
signal (P
out
=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the
gate voltage 1 is kept in 3.4V. The nominal output power
becomes available at the state that V
GG2
is 4V (typical) and 5V
(maximum). At this point, V
GG1
has to be kept in 3.4V
.
At V
GG1
=3.4V & V
GG2
=5V, the typical gate currents are 0.4mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.8V, V
GG
=0V)
1
4
5
1
2
3
4
5
RF Input added Gate Voltage 1(P
in
&V
GG1
)
Gate Voltage 2(V
GG2
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
• P
out
>45W,
η
T
>33%
@V
DD
=12.8V, V
GG1
=3.4V, V
GG2
=5V, P
in
=50mW
• Broadband Frequency Range: 764-870MHz
• Metal cap structure that makes the improvements of RF
radiation simple
• Low-Power Control Current I
GG1
+I
GG2
=0.4mA (typ)
@ V
GG1
=3.4V, V
GG2
=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA45H7687M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA45H7687M1-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
th
RA45H7687M1
MITSUBISHI ELECTRIC
1/9
29 Feb 2008
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA45H7687M1
MAXIMUM RATINGS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG1
V
GG2
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage 1
Gate Voltage 2
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG1
=3.4V
±
7%, V
GG2
<5V, P
in
=0W
V
GG2
<5V, V
DD
<12.8V, P
in
=50mW
V
GG1
=3.4V
±
7%, V
DD
<12.8V, P
in
=50mW
f=764-870MHz,
V
GG1
=3.4V
±
7%, V
GG2
<5V
RATING
17
4.5
6
100
60
-30 to +100
-40 to +110
UNIT
V
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
F
P
out1
ηT
2f
o
3f
o
ρ
in
I
DD
P
out2
—
—
Frequency Range
Output Power 1
Total Efficiency
2
3
nd
nd
CONDITIONS
V
DD
=12.8V, V
GG1
=3.4V, V
GG2
=5V, P
in
=50mW
V
DD
=12.8V
V
GG1
=3.4V
V
GG2
=5V
P
in
=50mW
V
DD
=17V, V
GG1
=V
GG2
=0V, P
in
=0W
V
DD
=15.2V, V
GG1
=3.4V, V
GG2
=1V, P
in
=2dBm
V
DD
=10.0-15.2V, P
in
=1-100mW,
1.5<P
out
<50W (V
GG2
control, V
GG1
=3.4V),
Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW,
P
out
=45W (V
GG2
control, V
GG1
=3.4V),
Load VSWR=20:1
MIN
764
45
33
TYP
MAX
870
UNIT
MHz
W
%
Harmonic
Harmonic
-40
-35
3:1
1
1.5
No parasitic oscillation
No degradation or destroy
dBc
dBc
—
mA
W
—
Input VSWR
Leakage Current
Output Power 2*
Stability
Load VSWR Tolerance
—
*: This is guaranteed as design value.
All parameters, conditions, ratings, and limits are subject to change without notice.
RA45H7687M1
MITSUBISHI ELECTRIC
2/9
29 Feb 2008
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA45H7687M1
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
O UT PUT PO WER, T O T AL EFFICIENCY,
v e rsus FREQ UENCY
80
OUTPUT POWER P
out
(W)
TOTAL EFFICIENCY(%)
70
60
50
40
30
20
10
760
780
800
820
840
FREQUENCY f(M Hz)
860
880
η
T
V
DD
=12.8V
V
GG1
=3.4V
V
GG2
=5V
P
in
=50m W
P
out
2 ,3
-30
-40
HARMONICS (dBc)
-50
nd
rd
HARM O NICS v e rsus FREQ UENCY
V
DD
=12.8V
V
GG1
=3.4V
V
GG2
=5V
P
in
=50m W
3
rd
2
nd
-60
-70
-80
760
780
800
820
840
FREQUENCY f(MHz)
860
880
INPUT VSWR v e rsus FREQ UENCY
5
V
DD
=12.8V
V
GG1
=3.4V
V
GG2
=5V
P
in
=50m W
INPUT VSWR
ρ
in
(-)
4
3
2
ρ
in
1
760
780
800
820
840
FREQUENCY f(MHz)
860
880
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER P
out
(dBm)
50
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
OUTPUT POWER P
out
(dBm)
DRAIN CURRENT
DD
(A)
I
POWER GAIN Gp(dB)
20
16
12
60
50
40
30
20
I
DD
Gp
P
out
24
DRAIN CURRENT
I
DD
(A)
DRAIN CURRENT
DD
(A)
I
20
16
12
8
4
0
20
POWER GAIN Gp(dB)
40
30
20
I
DD
f=764M Hz
V
DD
=12.8V
V
GG1
=3.4V
V
GG2
=5V
8
4
0
20
10
0
-10
-5
0
5
10
10
0
-10
-5
0
5
10
f=806M Hz
V
DD
=12.8V
V
GG1
=3.4V
V
GG2
=5V
15
15
INPUT POW ER P
in
(dBm)
INPUT POW ER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER P
out
(dBm)
50
40
30
20
10
0
-10
-5
0
5
10
I
DD
Gp
P
out
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
24
OUTPUT POWER P
out
(W)
DRAIN CURRENT
DD
(A)
I
20
16
12
8
4
0
20
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
DRAIN VOLTAGE V
D D
(V)
14
16
I
DD
P
out
f=764M Hz
V
GG1
=3.4V
V
GG2
=5V
P
in
=50m W
18
16
14
12
10
8
6
4
2
0
POWER GAIN Gp(dB)
f=870M Hz
V
DD
=12.8V
V
GG1
=3.4V
V
GG2
=5V
15
INPUT POW ER P
in
(dBm)
RA45H7687M1
MITSUBISHI ELECTRIC
3/9
29 Feb 2008
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA45H7687M1
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
DRA IN V OLTA GE V
D D
(V )
I
D D
P
out
f=806M Hz
V
GG1
=3.4V
V
GG2
=5V
P
in
=50m W
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus D R AIN VO LT AG E
18
OUTPUT POWER P
out
(W)
16
DRAIN CURRENT
DD
(A)
I
14
12
10
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
DRA IN V OLTA GE V
D D
(V )
I
D D
P
out
f=870M Hz
V
GG1
=3.4V
V
GG2
=5V
P
in
=50m W
18
16
14
12
10
8
6
4
2
0
DRAIN CURRENT
DD
(A)
I
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E2
OUTPUT POWER P
out
(W) (dBm)
60
50
40
30
20
10
0
0
1
I
D D
P
out
(W)
f=764M Hz
V
DD
=12.8V
V
GG1
=3.4V
P
in
=50m W
P
out
(d Bm )
O U T PU T PO WER and D R AIN C U R R EN T
v e rsus G AT E VO LT AG E2
12
DRAIN CURRENT I
D
(A)
D
10
8
6
4
2
0
5
OUTPUT POWER P
out
(W) (dBm)
60
50
40
30
20
10
0
0
1
I
D D
P
out
(d Bm )
12
DRAIN CURRENT
DD
(A)
I
10
8
6
4
2
0
5
P
out
(W)
f=806M Hz
V
DD
=12.8V
V
GG1
=3.4V
P
in
=50m W
2
3
4
GA TE V OLTA GE V
GG 2
(V )
2
3
4
GA TE V OLTA GE V
GG 2
(V )
O UT PUT PO WER and DRAIN CURRENT
v e rsus G AT E VO LT AG E2
OUTPUT POWER P
out
(W) (dBm)
60
50
40
30
20
10
0
0
1
I
D D
O UT PUT PO WER and DRAIN CURRENT
v e rsus G AT E VO LT AG E2
12
DRAIN CURRENT
DD
(A)
I
10
8
6
4
OUTPUT POWER P
out
(W) (dBm)
60
50
40
30
20
10
0
1
2
3
4
GATE V OLTA GE V
GG2
(V )
5
f=764M Hz
V
DD
=12.8V
V
GG1
=3.4V
P
in
=2dBm
12
DRAIN CURRENT
DD
(A)
I
DRAIN CURRENT
DD
(A)
I
10
8
P
out
(dBm )
P
out
(dBm )
6
I
D D
P
out
(W)
P
out
(W)
4
2
0
f=870M Hz
V
DD
=12.8V
V
GG1
=3.4V
P
in
=50m W
2
0
5
2
3
4
GA TE V OLTA GE V
GG2
(V )
O UT PUT PO WER and DRAIN CURRENT
v e rsus G AT E VO LT AG E2
OUTPUT POWER P
out
(W) (dBm)
OUTPUT POWER P
out
(W) (dBm)
60
50
40
30
20
10
P
out
(W)
f=806M Hz
V
DD
=12.8V
V
GG1
=3.4V
P
in
=2dBm
P
out
(dBm )
O UT PUT PO WER and DRAIN CURRENT
v e rsus G AT E VO LT AG E2
12
DRAIN CURRENT
DD
(A)
I
10
8
6
60
50
40
30
20
10
0
1
2
3
4
GA TE V OLTA GE V
GG2
(V )
5
I
D D
P
out
(W)
f=870M Hz
V
DD
=12.8V
V
GG1
=3.4V
P
in
=2dBm
P
out
(dBm )
12
10
8
6
4
2
0
I
D D
4
2
0
0
1
2
3
4
5
GA TE V OLTA GE V
GG2
(V )
RA45H7687M1
MITSUBISHI ELECTRIC
4/9
29 Feb 2008
th
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA45H7687M1
OUTLINE DRAWING
(mm)
67±1
60±1
2-R2±0.5
49.8±1
(3.26)
19.4±1
10.7±1
① ②
③
④
15±1
12.5±1
17±1
44±1
56±1
3.1+0.6/-0.4
0.6±0.2
7.3±0.5
4±0.5
（2.6）
1 RF Input added Gate Voltage 1(P
in
& V
GG1
)
2 Gate Voltage 2(V
GG2
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
（9.9）
18±1
RA45H7687M1
MITSUBISHI ELECTRIC
5/9
29 Feb 2008
th
模拟电子
