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RB520G-30FH

Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, VMD2, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:ROHM(罗姆半导体)

厂商官网:https://www.rohm.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
ROHM(罗姆半导体)
包装说明
R-PDSO-F2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-F2
元件数量
1
端子数量
2
最高工作温度
125 °C
最大输出电流
0.1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
参考标准
AEC-Q101
最大重复峰值反向电压
30 V
表面贴装
YES
技术
SCHOTTKY
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
Diodes
RB520G-30
FH
AEC-Q101 Qualified
Schottky barrier diode
RB520G-30FH
Applications
Low current rectification
Dimensions
(Unit : mm)
0.6±0.05
0.13±0.03
Land size figure
(Unit : mm)
0.5
0.5
Features
1) Ultra Small mold type. (VMD2)
2) Low I
R
.
3) High reliability.
1.0±0.05
1.4±0.05
VMD2
0.27±0.03
Construction
Silicon epitaxial planar
0.5±0.05
Structure
ROHM : VMD2
dot (year week factory)
Taping specifications
(Unit : mm)
0.18±0.05
4±0.1
2±0.05
φ1.5+0.1
     0
1.75±0.1
3.5±0.05
1.11±0.05
2.1±0.1
φ0.5
0.76±0.1
4±0.1
2±0.05
0.4
8.0±0.3
0.1
1.2
0.3
0.65±0.05
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage(DC)
Average rectified forward current
Forward current surge peak
(60Hz・1cyc)
Junction temperature
Storage temperature
Symbol
V
R
Io
I
FSM
Tj
Tstg
Limits
30
100
500
125
-40 to +125
Unit
V
mA
mA
Electrical characteristics
(Ta=25°C)
Param eter
Sym bol
V
F
I
R
Min.
-
-
Typ.
-
-
Max.
0.45
0.5
Unit
V
µA
I
F
=10m A
V
R
=10V
Conditions
Forward voltage
Revers e current
Rev.C
1/3
Diodes
Electrical characteristic curves
(Ta=25°C)
1000
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
100
10
1
0.1
0.01
0.001
0
100
200
300
400
500
600
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
Ta=125℃
Ta=75℃
1000000
Ta=125℃
100000
Ta=75℃
10000
1000
100
10
1
0.1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
Ta=-25℃
Ta=25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
RB520G-30
FH
f=1MH½
Ta=-25℃
Ta=25℃
10
1
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
370
FORWARD VOLTAGE:VF(mV)
360
350
340
330
320
VF DISPERSION MAP
Ta=25℃
VF=10mA
n=30pcs
1000
900
REVERSE CURRENT:IR(nA)
800
700
600
500
400
300
200
100
0
AVE:100.5nA
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
VR=10V
n=30pcs
20
19
18
17
16
15
14
13
12
11
10
AVE:16.28pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:347.5mV
IR DISPERSION MAP
Ct DISPERSION MAP
20
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
15
8.3ms
10
AVE:4.20A
5
1cyc
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
8.3ms 8.3ms
1cyc
5
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
Ifsm
t
5
0
0
1
IFSM DISRESION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
0
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
Rth(j-a)
0.1
0.08
FORWARD POWER
DISSIPATION:Pf(W)
D=1/2
0.06
Sin(θ=180)
0.04
0.02
0
0.1
10
1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
0.05
0.1
0.15
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.2
Rth(j-c)
0.02
100
REVERSE POWER
DISSIPATION:P
R
(W)
DC
0.015
Mounted on epoxy board
IM=10mA
IF=100mA
0.01
DC
Sin(θ=180)
0
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
D=1/2
1ms
time
0.005
300us
10
0.001
Rev.C
2/3
Diodes
0.3
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
0V
0.2
DC
D=1/2
0.1
Sin(θ=180)
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
Io
t
T
VR
D=t/T
VR=15V
Tj=125℃
0.3
0A
0V
0.2
DC
D=1/2
0.1
Sin(θ=180)
0
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
Io
t
T
VR
D=t/T
VR=15V
Tj=125℃
RB520G-30
FH
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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