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RB530CM-60

Schottky Barrier Diode

器件类别:分立半导体    二极管   

厂商名称:ROHM(罗姆半导体)

厂商官网:https://www.rohm.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
VMN2M, 2 PIN
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-F2
元件数量
1
端子数量
2
最高工作温度
150 °C
最大输出电流
0.1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
60 V
表面贴装
YES
技术
SCHOTTKY
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
Schottky Barrier Diode
RB530CM-60
lApplication
General rectification
(1)
Data
Sheet
lDimensions
(Unit : mm)
0.37±0.05
(0.26±0.05)
lLand
Size Figure
(Unit : mm)
0.55
0.45
lFeatures
0.86±0.05
1.00±0.05
1) Small mold type
(VMN2M)
2) High reliability
3) Low V
F
(2)
0~0.10
VMN2M
(1) Cathode
0.22±0.05
0.16±0.05
0.60±0.05
lStructure
ROHM : VMN2M
: Manufacture year/ week/ factory
lConstruction
Silicon epitaxial planar type
lTaping
Dimensions
(Unit : mm)
4.0±0.05
f1.55±0.05
2.0±0.05
1.75±0.1
(2) Anode
0.5
0.2±0.05
3.5±0.05
8.0±0.1
(2.75)
0.7±0.05
1.1±0.05
0.47±0.05
2.0±0.05
f0.5±0.05
lAbsolute
Maximum Ratings
(T
c
= 25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty≦0.5
Direct reverse voltage
Glass epoxy board mounted, 60Hz half sin wave,
Limits
60
60
100
200
150
-55
to
+150
Unit
V
V
mA
mA
°C
°C
resistive load
60Hz half sin wave, Non-repetitive at
T
a
=25ºC , 1cycle
Operating junction temperature
Storage temperature
-
-
lElectrical
Characteristics
(T
j
= 25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F1
V
F2
I
R
Conditions
I
F
=10mA
I
F
=15mA
V
R
=60V
Min.
-
-
-
Typ. Max. Unit
0.47 0.54
0.52 0.60
0.09
1
V
V
mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.03 - Rev.A
RB530CM-60
lElectrical
Characteristic Curves
Data Sheet
1000
T
j
= 150°C
1000
T
j
= 150°C
FORWARD CURRENT : I
F
(mA)
100
T
j
= 125°C
T
j
= 75°C
REVERSE CURRENT : I
R
(mA)
100
10
1
T
j
= 75°C
0.1
0.01
0.001
T
j
=
-25°C
0.0001
T
j
= 125°C
10
T
j
= 25°C
1
T
j
=
-25°C
0.1
0
200
400
600
800
1000
1200
T
j
= 25°C
0
10
20
30
40
50
60
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
100
580
FORWARD VOLTAGE : V
F
(mV)
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
T
j
= 25°C
f = 1MHz
570
560
550
540
530
Ave. : 513.3mV
520
510
500
T
j
=25°C
I
F
=15mA
n=30pcs
10
1
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-C
t
CHARACTERISTICS
V
F
DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.03 - Rev.A
RB530CM-60
lElectrical
Characteristic Curves
Data Sheet
0.7
8.0
T
j
=25°C
V
R
=60V
n=30pcs
7.5
T
j
=25°C
f=1MHz
V
R
=0V
n=10pcs
REVERSE CURRENT : I
R
(mA)
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
0.6
0.5
0.4
0.3
Ave. : 0.087mA
0.2
0.1
0
7.0
6.5
6.0
5.5
Ave. : 4.65pF
5.0
4.5
4.0
I
R
DISPERSION MAP
C
t
DISPERSION MAP
8
40
REVERSE RECOVERY TIME : t
rr
(ns)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
7
I
FSM
1cyc
8.3ms
T
a
=25°C
6
5
Ave. : 3.54A
4
3
2
1
0
30
T
j
=25°C
I
F
=0.5A
I
R
=1.0A
I
rr
/ I
R
=0.25
n=10pcs
20
Ave. : 9.0ns
10
0
I
FSM
DISPERSION MAP
t
rr
DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.03 - Rev.A
RB530CM-60
lElectrical
Characteristic Curves
Data Sheet
10
10
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
I
FSM
8.3 8.3
ms ms
1cyc
T
a
=25°C
I
FSM
time
1cyc
T
a
=25°C
1
1
10
100
1
1
10
100
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
TIME : t (ms)
I
FSM
-t CHARACTERISTICS
0.25
T
j
= 150°C
0.06
T
j
= 150°C
0.05
DC
FORWARD POWER
DISSIPATION : P
F
(W)
0.20
REVERSE POWER
DISSIPATION : P
R
(W)
0.04
0.03
Sin(θ=180)
0.02
DC
0.01
0.00
D = 1/2
0.15
Sin(θ=180)
0.10
D = 1/2
0.05
0.00
0
0.05
0.1
0.15
0.2
0
10
20
30
40
50
60
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(mA)
I
o
-P
F
CHARACTERISTICS
REVERSE VOLTAGE : V
R
(V)
V
R
-P
R
CHARACTERISTICS
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
4/5
2015.03 - Rev.A
RB530CM-60
lElectrical
Characteristic Curves
Data Sheet
1000
TRANSIENT
THERMAL IMPEDANCE : R
th
(°C/W)
R
th(j-a)
0.3
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
I
O
0A
0V
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
R
th(j-c)
100
Glass epoxy board mounted
IM=10mA
I
F
=100mA
0.2
DC
D = 1/2
0.1
Sin(θ=180)
time
1ms 300ms
10
0.001
0
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
TIME : t (s)
R
th
-t CHARACTERISTICS
AMBIENT TEMPERATURE : T
a
(°C)
DERATING CURVE (I
o
-T
a
)
0.3
7
ELECTROSTATIC
DISCHARGE TEST : ESD (kV)
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
I
O
0A
0V
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
6
5
4
3
2
AVE. : 0.8kV
1
0
C=200pF
R=0W
AVE. : 5kV
0.2
DC
D = 1/2
0.1
Sin(θ=180)
0
0
25
50
75
100
125
150
C=100pF
R=1.5kW
CASE TEMPERATURE : T
c
(°C)
DERATING CURVE (I
o
-T
c
)
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.03 - Rev.A
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