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RBV5002

SILICON BRIDGE RECTIFIERS

器件类别:分立半导体    二极管   

厂商名称:EIC [EIC discrete Semiconductors]

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
EIC [EIC discrete Semiconductors]
包装说明
R-PSFM-T4
Reach Compliance Code
compli
其他特性
HIGH RELIABILITY
最小击穿电压
200 V
外壳连接
ISOLATED
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
JESD-30 代码
R-PSFM-T4
最大非重复峰值正向电流
400 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-40 °C
最大输出电流
50 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
200 V
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
RBV5000 - RBV5010
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
*
*
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength of 2000 V
DC
Ideal for printed circuit board
Very good heat dissipation
Pb / RoHS Free
SILICON BRIDGE RECTIFIERS
RBV25
3.9
±
0.2
C3
30
±
0.3
4.9
±
0.2
3.2
±
0.1
20
±
0.3
+
13.5
±
0.3
~ ~
11
±
0.2
1.0
±
0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 8.17 grams ( Approximaly )
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0
±
0.2
0.7
±
0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 25 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Note :
SYMBOL
RBV
5000
50
35
50
RBV
5001
100
70
100
RBV
5002
200
140
200
RBV
5004
400
280
400
50
400
660
1.1
10
200
1.5
10
RBV
5006
600
420
600
RBV
5008
800
560
800
17.5
±
0.5
RBV
5010
1000
700
1000
UNIT
V
V
V
A
A
A
2
S
V
µA
µA
°C/W
°C
°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
θ
JC
T
J
T
STG
Ta = 25
°C
Ta = 100
°C
- 40 to + 150
1. Thermal Resistance from junction to case with units mounted on heatsink.
Page 1 of 2
Rev. 03 : September 9, 2005
RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
60
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
600
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
50
500
40
400
T
J
= 50
°C
30
300
20
200
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
10
P.C. Board Mounted with
SINE WAVE R-Load
0
0
25
50
75
100
125
150
175
100
0
1
2
4
6
10
20
40
60
10
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
T
J
= 100
°C
FORWARD CURRENT, AMPERES
REVERSE CURRENT,
MICROAMPERES
10
Pulse Width = 300
µs
1 % Duty Cycle
1.0
1.0
0.1
T
J
= 25
°C
T
J
= 25
°C
0.1
0.01
0
20
40
60
80
100
12
0
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 03 : September 9, 2005
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参数对比
与RBV5002相近的元器件有:RBV5000、RBV5000_05、RBV5004、RBV5001、RBV5008、RBV5006、RBV5010。描述及对比如下:
型号 RBV5002 RBV5000 RBV5000_05 RBV5004 RBV5001 RBV5008 RBV5006 RBV5010
描述 SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS
是否无铅 不含铅 不含铅 - 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 - 符合 符合 符合 符合 符合
厂商名称 EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
包装说明 R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Reach Compliance Code compli compli - compli compli compli compli compli
其他特性 HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
最小击穿电压 200 V 50 V - 400 V 100 V 800 V 600 V 1000 V
外壳连接 ISOLATED ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON - SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
最大正向电压 (VF) 1.1 V 1.1 V - 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 代码 R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
最大非重复峰值正向电流 400 A 400 A - 400 A 400 A 400 A 400 A 400 A
元件数量 4 4 - 4 4 4 4 4
相数 1 1 - 1 1 1 1 1
端子数量 4 4 - 4 4 4 4 4
最高工作温度 150 °C 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -40 °C -40 °C - -40 °C -40 °C -40 °C -40 °C -40 °C
最大输出电流 50 A 50 A - 50 A 50 A 50 A 50 A 50 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 200 V 50 V - 400 V 100 V 800 V 600 V 1000 V
表面贴装 NO NO - NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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