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RC28F128J3D-75

8M X 16 FLASH 2.7V PROM, 75 ns, PBGA64
8M × 16 FLASH 2.7V 可编程只读存储器, 75 ns, PBGA64

器件类别:存储    存储   

厂商名称:Numonyx ( Micron )

厂商官网:https://www.micron.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Numonyx ( Micron )
零件包装代码
BGA
包装说明
TBGA, BGA64,8X8,40
针数
64
Reach Compliance Code
unknow
ECCN代码
3A991.B.1.A
最长访问时间
75 ns
备用内存宽度
8
命令用户界面
YES
通用闪存接口
YES
数据轮询
NO
JESD-30 代码
R-PBGA-B64
长度
13 mm
内存密度
134217728 bi
内存集成电路类型
FLASH
内存宽度
16
功能数量
1
部门数/规模
128
端子数量
64
字数
8388608 words
字数代码
8000000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
8MX16
封装主体材料
PLASTIC/EPOXY
封装代码
TBGA
封装等效代码
BGA64,8X8,40
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE
页面大小
4/8 words
并行/串行
PARALLEL
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3/3.3 V
编程电压
2.7 V
认证状态
Not Qualified
就绪/忙碌
YES
座面最大高度
1.2 mm
部门规模
128K
最大待机电流
0.00012 A
最大压摆率
0.054 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
切换位
NO
类型
NOR TYPE
宽度
10 mm
文档预览
Numonyx™ Embedded Flash Memory
(J3 v. D)
32, 64, 128, and 256 Mbit
Datasheet
Product Features
Architecture
— High-density symmetrical 128-Kbyte blocks
— 256 Mbit (256 blocks)
— 128 Mbit (128 blocks)
— 64 Mbit (64 blocks)
— 32 Mbit (32 blocks)
Performance
— 75 ns Initial Access Speed (128/64/32
-Mbit densities)
— 95 ns Initial Access Speed (256 Mbit only)
— 25 ns 8-word and 4-word Asynchronous
page-mode reads
— 32-Byte Write buffer
— 4 µs per Byte Effective programming time
System Voltage and Power
— V
CC
= 2.7 V to 3.6 V
— V
CCQ
= 2.7 V to 3.6 V
Packaging
— 56-Lead TSOP package (32, 64, 128 Mbit
only)
— 64-Ball Numonyx Easy BGA package (32,
42, 128 and 256 Mbit)
Security
— Enhanced security options for code
protection
— 128-bit Protection Register
— 64-bit Unique device identifier
— 64-bit User-programmable OTP cells
— Absolute protection with V
PEN
= GND
— Individual block locking
— Block erase/program lockout during power
transitions
Software
— Program and erase suspend support
— Flash Data Integrator (FDI), Common Flash
Interface (CFI) Compatible
Quality and Reliability
— Operating temperature:
-40 °C to +85 °C
— 100K Minimum erase cycles per block
— 0.13 µm ETOX™ VIII Process
308551-05
November 2007
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND
CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A
PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx
products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications.
Numonyx B.V. may make changes to specifications and product descriptions at any time, without notice.
Numonyx B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented
subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or
otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.
Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves these for
future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting
Numonyx's website at
http://www.numonyx.com.
Numonyx, the Numonyx logo, and StrataFlash are trademarks or registered trademarks of Numonyx B.V. or its subsidiaries in other countries.
*Other names and brands may be claimed as the property of others.
Copyright © 2007, Numonyx B.V., All Rights Reserved.
Datasheet
2
November 2007
308551-05
Numonyx™ Embedded Flash Memory (J3 v. D)
Contents
1.0
Introduction
.............................................................................................................. 6
1.1
Nomenclature ..................................................................................................... 6
1.2
Acronyms........................................................................................................... 6
1.3
Conventions ....................................................................................................... 7
Functional Overview
.................................................................................................. 8
2.1
Block Diagram .................................................................................................. 10
2.2
Memory Map..................................................................................................... 11
Package Information
............................................................................................... 12
3.1
56-Lead TSOP Package (32, 64, 128 Mbit) ............................................................ 12
3.2
Easy BGA Package (32, 64, 128 and 256 Mbit) ...................................................... 13
Ballouts and Signal Descriptions..............................................................................
15
4.1
Easy BGA Ballout (32/64/128 Mbit) ..................................................................... 15
4.2
56-Lead TSOP Package Pinout (32/64/128 Mbit).................................................... 17
4.3
Signal Descriptions ............................................................................................ 17
Maximum Ratings and Operating Conditions............................................................
19
5.1
Absolute Maximum Ratings................................................................................. 19
5.2
Operating Conditions ......................................................................................... 19
5.3
Power Up/Down ................................................................................................ 19
5.3.1 Power-Up/Down Characteristics................................................................ 20
5.3.2 Power Supply Decoupling ........................................................................ 20
5.4
Reset............................................................................................................... 20
Electrical Characteristics
......................................................................................... 21
6.1
DC Current Specifications ................................................................................... 21
6.2
DC Voltage specifications.................................................................................... 22
6.3
Capacitance...................................................................................................... 22
AC Characteristics
................................................................................................... 23
7.1
Read Specifications............................................................................................ 23
7.2
Write Specifications ........................................................................................... 27
7.3
Program, Erase, Block-Lock Specifications ............................................................ 29
7.4
Reset Specifications........................................................................................... 29
7.5
AC Test Conditions ............................................................................................ 30
Bus Interface...........................................................................................................
31
8.1
Bus Reads ........................................................................................................ 32
8.1.1 Asynchronous Page Mode Read ................................................................ 32
8.1.2 Output Disable ....................................................................................... 33
8.2
Bus Writes........................................................................................................ 33
8.3
Standby ........................................................................................................... 34
8.3.1 Reset/Power-Down ................................................................................. 34
8.4
Device Commands............................................................................................. 34
Flash Operations
..................................................................................................... 36
9.1
Status Register ................................................................................................. 36
9.1.1 Clearing the Status Register .................................................................... 37
9.2
Read Operations ............................................................................................... 37
9.2.1 Read Array ............................................................................................ 37
9.2.2 Read Status Register .............................................................................. 38
9.2.3 Read Device Information ......................................................................... 38
9.2.4 CFI Query ............................................................................................. 38
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
November 2007
308551-05
Datasheet
3
Numonyx™ Embedded Flash Memory (J3 v. D)
9.3
9.4
9.5
9.6
9.7
Programming Operations ....................................................................................38
9.3.1 Single-Word/Byte Programming................................................................39
9.3.2 Buffered Programming ............................................................................39
Block Erase Operations .......................................................................................40
Suspend and Resume .........................................................................................41
Status Signal (STS)............................................................................................42
Security and Protection.......................................................................................43
9.7.1 Normal Block Locking ..............................................................................43
9.7.2 Configurable Block Locking.......................................................................44
9.7.3 OTP Protection Registers..........................................................................44
9.7.4 Reading the OTP Protection Register..........................................................44
9.7.5 Programming the OTP Protection Register ..................................................44
9.7.6 Locking the OTP Protection Register ..........................................................45
9.7.7 VPP/ VPEN Protection ..............................................................................46
10.0 Device Command Codes
...........................................................................................47
11.0 Device ID Codes.......................................................................................................48
12.0 Flow Charts..............................................................................................................49
13.0 Common Flash Interface
..........................................................................................58
13.1 Query Structure Output ......................................................................................58
13.2 Query Structure Overview...................................................................................59
13.3 Block Status Register .........................................................................................60
13.4 CFI Query Identification String ............................................................................60
13.5 System Interface Information ..............................................................................61
13.6 Device Geometry Definition .................................................................................61
13.7 Primary-Vendor Specific Extended Query Table ......................................................62
A
B
Additional Information.............................................................................................66
Ordering Information
...............................................................................................67
Datasheet
4
November 2007
308551-05
Numonyx™ Embedded Flash Memory (J3 v. D)
Revision History
Date
July 2005
Revision
001
Description
Initial release
Changed Marketing name from 28FxxxJ3 to J3 v. D.
Updated the following:
Table 18, “Command Bus Operations” on page 35
Section 9.2.2, “Read Status Register” on page 38
Section 9.3.2, “Buffered Programming” on page 39
Table 24, “Valid Commands During Suspend” on page 41
Added
Table 25, “STS Configuration Register” on page 42
.
Section 5.3.1, “Power-Up/Down Characteristics” on page 20
was modified.
September 2005
002
February 2006
003
Notes on
Table 8, “DC Voltage Characteristics” on page 22
were updated
Table 10, “Read Operations” on page 23
was updated with R16 value
Table 12, “Configuration Performance” on page 29
was updated
Note 1 of
Table 26, “STS Configuration Coding Definitions” on page 43
was updated.
Added 256-Mbit; Updated format.
Applied Numonyx branding.
February 2007
November 2007
004
05
November 2007
308551-05
Datasheet
5
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参数对比
与RC28F128J3D-75相近的元器件有:308551-05、RC28F320J3D-75、TE28F320J3D-75、PC28F320J3D-75、PC28F640J3D-75、PC28F128J3D-75、PC48F3300J0Z00S、RC28F640J3D-75、RC48F3300J0Z00S。描述及对比如下:
型号 RC28F128J3D-75 308551-05 RC28F320J3D-75 TE28F320J3D-75 PC28F320J3D-75 PC28F640J3D-75 PC28F128J3D-75 PC48F3300J0Z00S RC28F640J3D-75 RC48F3300J0Z00S
描述 8M X 16 FLASH 2.7V PROM, 75 ns, PBGA64 2M X 16 FLASH 2.7V PROM, 75 ns, PDSO56 2M X 16 FLASH 2.7V PROM, 75 ns, PDSO56 2M X 16 FLASH 2.7V PROM, 75 ns, PDSO56 2M X 16 FLASH 2.7V PROM, 75 ns, PDSO56 2M X 16 FLASH 2.7V PROM, 75 ns, PDSO56 8M X 16 FLASH 2.7V PROM, 75 ns, PBGA64 2M X 16 FLASH 2.7V PROM, 75 ns, PDSO56 4M X 16 FLASH 2.7V PROM, 75 ns, PBGA64 2M X 16 FLASH 2.7V PROM, 75 ns, PDSO56
内存宽度 16 16 16 16 16 16 16 16 16 16
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 64 56 64 56 64 64 64 64 64 64
组织 8MX16 2M X 16 2MX16 2MX16 2MX16 4MX16 8MX16 16MX16 4MX16 16MX16
表面贴装 YES Yes YES YES YES YES YES YES YES YES
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 BALL GULL WING BALL GULL WING BALL BALL BALL BALL BALL BALL
端子位置 BOTTOM DUAL BOTTOM DUAL BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
是否Rohs认证 不符合 - 不符合 不符合 符合 符合 符合 符合 不符合 不符合
厂商名称 Numonyx ( Micron ) - Numonyx ( Micron ) Numonyx ( Micron ) Numonyx ( Micron ) Numonyx ( Micron ) Numonyx ( Micron ) Numonyx ( Micron ) Numonyx ( Micron ) -
零件包装代码 BGA - BGA TSOP BGA BGA BGA BGA BGA BGA
包装说明 TBGA, BGA64,8X8,40 - TBGA, BGA64,8X8,40 TSSOP, TSSOP56,.8,20 TBGA, BGA64,8X8,40 TBGA, BGA64,8X8,40 TBGA, BGA64,8X8,40 LEAD FREE, BGA-64 TBGA, BGA64,8X8,40 LEAD FREE, BGA-64
针数 64 - 64 56 64 64 64 64 64 64
Reach Compliance Code unknow - unknow unknow unknow unknow unknow unknow unknow unknow
ECCN代码 3A991.B.1.A - 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A EAR99 3A991.B.1.A
最长访问时间 75 ns - 75 ns 75 ns 75 ns 75 ns 75 ns 95 ns 75 ns 95 ns
备用内存宽度 8 - 8 8 8 8 8 8 8 8
命令用户界面 YES - YES YES YES YES YES YES YES YES
通用闪存接口 YES - YES YES YES YES YES YES YES YES
数据轮询 NO - NO NO NO NO NO NO NO NO
JESD-30 代码 R-PBGA-B64 - R-PBGA-B64 R-PDSO-G56 R-PBGA-B64 R-PBGA-B64 R-PBGA-B64 R-PBGA-B64 R-PBGA-B64 R-PBGA-B64
长度 13 mm - 13 mm 18.4 mm 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm
内存密度 134217728 bi - 33554432 bi 33554432 bi 33554432 bi 67108864 bi 134217728 bi 268435456 bi 67108864 bi 268435456 bi
内存集成电路类型 FLASH - FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH
部门数/规模 128 - 32 32 32 64 128 256 64 256
字数 8388608 words - 2097152 words 2097152 words 2097152 words 4194304 words 8388608 words 16777216 words 4194304 words 16777216 words
字数代码 8000000 - 2000000 2000000 2000000 4000000 8000000 16000000 4000000 16000000
工作模式 ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C - 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C - -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TBGA - TBGA TSSOP TBGA TBGA TBGA TBGA TBGA LBGA
封装等效代码 BGA64,8X8,40 - BGA64,8X8,40 TSSOP56,.8,20 BGA64,8X8,40 BGA64,8X8,40 BGA64,8X8,40 BGA64,8X8,40 BGA64,8X8,40 BGA64,8X8,40
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, THIN PROFILE - GRID ARRAY, THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, LOW PROFILE
页面大小 4/8 words - 4/8 words 4/8 words 4/8 words 4/8 words 4/8 words 4/8 words 4/8 words 4/8 words
并行/串行 PARALLEL - PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 225
电源 3/3.3 V - 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V
编程电压 2.7 V - 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
就绪/忙碌 YES - YES YES YES YES YES YES YES YES
座面最大高度 1.2 mm - 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.3 mm
部门规模 128K - 128K 128K 128K 128K 128K 128K 128K 128K
最大待机电流 0.00012 A - 0.00012 A 0.00012 A 0.00012 A 0.00012 A 0.00012 A 0.00012 A 0.00012 A 0.00012 A
最大压摆率 0.054 mA - 0.054 mA 0.054 mA 0.054 mA 0.054 mA 0.054 mA 0.08 mA 0.054 mA 0.08 mA
最大供电电压 (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 2.7 V - 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
标称供电电压 (Vsup) 3 V - 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
技术 CMOS - CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
端子节距 1 mm - 1 mm 0.5 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
处于峰值回流温度下的最长时间 NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED 15 15 15 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
切换位 NO - NO NO NO NO NO NO NO NO
类型 NOR TYPE - NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
宽度 10 mm - 10 mm 14 mm 10 mm 10 mm 10 mm 10 mm 10 mm 10 mm
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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