Intel StrataFlash
®
Memory (J3)
256-Mbit (x8/x16)
Datasheet
Product Features
■
■
■
Performance
— 110/115/120/150 ns Initial Access Speed
— 125 ns Initial Access Speed (256 Mbit
density only)
— 25 ns Asynchronous Page mode Reads
— 30 ns Asynchronous Page mode Reads
(256Mbit density only)
— 32-Byte Write Buffer
—6.8 µs per byte effective
programming time
Software
— Program and Erase suspend support
— Flash Data Integrator (FDI), Common
Flash Interface (CFI) Compatible
Security
— 128-bit Protection Register
—64-bit Unique Device Identifier
—64-bit User Programmable OTP Cells
— Absolute Protection with V
PEN
= GND
— Individual Block Locking
— Block Erase/Program Lockout during
Power Transitions
■
■
■
Architecture
— Multi-Level Cell Technology: High
Density at Low Cost
— High-Density Symmetrical 128-Kbyte
Blocks
—256 Mbit (256 Blocks) (0.18µm only)
—128 Mbit (128 Blocks)
—64 Mbit (64 Blocks)
—32 Mbit (32 Blocks)
Quality and Reliability
— Operating Temperature:
-40 °C to +85 °C
— 100K Minimum Erase Cycles per Block
— 0.18 µm ETOX™ VII Process (J3C)
— 0.25 µm ETOX™ VI Process (J3A)
Packaging and Voltage
— 56-Lead TSOP Package
— 64-Ball Intel
®
Easy BGA Package
— Lead-free packages available
— 48-Ball Intel
®
VF BGA Package (32 and
64 Mbit) (x16 only)
— V
CC
=
2.7 V to 3.6 V
— V
CCQ
= 2.7 V to 3.6 V
Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash
®
Memory (J3)
device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-
Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-
per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed
interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future
devices.
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes
advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components
are ideal for code and data applications where high density and low cost are required. Examples include
networking, telecommunications, digital set top boxes, audio recording, and digital imaging.
By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from
existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash
®
memory (28F640J5 and 28F320J5) devices.
J3 memory components deliver a new generation of forward-compatible software support. By using the
Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density
upgrades and optimized write capabilities of future Intel StrataFlash
®
memory devices. Manufactured on Intel
®
0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device
provides the highest levels of quality and reliability.
Notice:
This document contains information on new products in production. The specifications are
subject to change without notice. Verify with your local Intel sales office that you have the latest
datasheet before finalizing a design.
Order Number: 290667-021
March 2005
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN
INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS
ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES
RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER
INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Intel reserves these for
future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
The 3 Volt Intel StrataFlash® Memory may contain design defects or errors known as errata which may cause the product to deviate from published
specifications. Current characterized errata are available on request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800-
548-4725 or by visiting Intel's website at http://www.intel.com.
Copyright © 2005, Intel Corporation. All rights reserved.
Intel and ETOX are trademarks or registered trademarks of Intel Corporation or its subsidiaries in the United States and other countries.
*Other names and brands may be claimed as the property of others.
2
Datasheet
Contents
Contents
1.0
Introduction....................................................................................................................................7
1.1
1.2
2.0
2.1
2.2
3.0
3.1
3.2
3.3
4.0
4.1
4.2
4.3
4.4
5.0
5.1
5.2
6.0
6.1
6.2
7.0
7.1
7.2
7.3
7.4
7.5
7.6
8.0
8.1
8.2
8.3
9.0
9.1
Nomenclature .......................................................................................................................7
Conventions..........................................................................................................................7
Block Diagram ......................................................................................................................9
Memory Map .......................................................................................................................10
56-Lead TSOP Package .....................................................................................................11
Easy BGA (J3) Package .....................................................................................................12
VF-BGA (J3) Package ........................................................................................................13
Easy BGA Ballout (32/64/128/256 Mbit) .............................................................................14
56-Lead TSOP (32/64/128/256 Mbit)..................................................................................15
VF BGA Ballout (32 and 64 Mbit) .......................................................................................15
Signal Descriptions .............................................................................................................16
Absolute Maximum Ratings ................................................................................................18
Operating Conditions ..........................................................................................................18
DC Current Characteristics .................................................................................................19
DC Voltage Characteristics.................................................................................................20
Read Operations.................................................................................................................22
Write Operations .................................................................................................................26
Block Erase, Program, and Lock-Bit Configuration Performance .......................................27
Reset Operation..................................................................................................................29
AC Test Conditions.............................................................................................................29
Capacitance ........................................................................................................................30
Power-Up/Down Characteristics.........................................................................................31
Power Supply Decoupling...................................................................................................31
Reset Characteristics..........................................................................................................31
Bus Operations Overview ...................................................................................................32
9.1.1 Bus Read Operation ..............................................................................................33
9.1.2 Bus Write Operation ..............................................................................................33
9.1.3 Output Disable .......................................................................................................33
9.1.4 Standby..................................................................................................................34
9.1.5 Reset/Power-Down ................................................................................................34
Functional Overview
.....................................................................................................................8
Package Information
...................................................................................................................11
Ballout and Signal Descriptions
................................................................................................14
Maximum Ratings and Operating Conditions...........................................................................18
Electrical Specifications
.............................................................................................................19
AC Characteristics
......................................................................................................................22
Power and Reset Specifications
................................................................................................31
Bus Operations
............................................................................................................................32
Datasheet
3
Contents
9.2
Device Commands ............................................................................................................. 35
10.0 Read Operations..........................................................................................................................
37
10.1
Read Array.......................................................................................................................... 37
10.1.1 Asynchronous Page Mode Read ........................................................................... 37
10.1.2 Enhanced Configuration Register (ECR)............................................................... 38
Read Identifier Codes ......................................................................................................... 39
10.2.1 Read Status Register............................................................................................. 39
Read Query/CFI.................................................................................................................. 41
Byte/Word Program ............................................................................................................ 42
Write to Buffer..................................................................................................................... 42
Program Suspend............................................................................................................... 43
Program Resume................................................................................................................ 43
Block Erase......................................................................................................................... 44
Block Erase Suspend ......................................................................................................... 44
Erase Resume .................................................................................................................... 45
Set Block Lock-Bit............................................................................................................... 46
Clear Block Lock-Bits.......................................................................................................... 46
Protection Register Program .............................................................................................. 47
13.3.1 Reading the Protection Register............................................................................ 47
13.3.2 Programming the Protection Register.................................................................... 47
13.3.3 Locking the Protection Register............................................................................. 47
Array Protection .................................................................................................................. 49
Set Read Configuration Register Command ...................................................................... 50
Status (STS) ....................................................................................................................... 50
10.2
10.3
11.1
11.2
11.3
11.4
12.1
12.2
12.3
13.1
13.2
13.3
11.0 Programming Operations
........................................................................................................... 42
12.0 Erase Operations.........................................................................................................................
44
13.0 Security Modes
............................................................................................................................ 46
13.4
14.1
14.2
14.0 Special Modes..............................................................................................................................
50
Appendix A Common Flash Interface.................................................................................................52
Appendix B Flow Charts
......................................................................................................................59
Appendix C Design Considerations
...................................................................................................68
Appendix D Additional Information
....................................................................................................70
Appendix E Ordering Information.......................................................................................................71
4
Datasheet
Contents
Revision History
Date of
Revision
07/07/99
08/03/99
09/07/99
Version
-001
-002
-003
Original Version
A
0
–A
2
indicated on block diagram
Changed Minimum Block Erase time,I
OL
, I
OH
, Page Mode and Byte Mode
currents. Modified RP# on
AC Waveform for Write Operations
Changed Block Erase time and t
AVWH
Removed all references to 5 V I/O operation
Corrected
Ordering Information,
Valid Combinations entries
12/16/99
-004
Changed Min program time to 211 µs
Added DU to Lead Descriptions table
Changed Chip Scale Package to Ball Grid Array Package
Changed default read mode to page mode
Removed erase queuing from Figure 10,
Block Erase Flowchart
Added Program Max time
Added Erase Max time
Added Max page mode read current
Moved tables to correspond with sections
Fixed typographical errors in ordering information and DC parameter table
Removed V
CCQ1
setting and changed V
CCQ2/3
to V
CCQ1/2
03/16/00
-005
Added recommended resister value for STS pin
Change operation temperature range
Removed note that rp# could go to 14 V
Removed V
OL
of 0.45 V; Removed V
OH
of 2.4 V
Updated I
CCR
Typ values
Added Max lock-bit program and lock times
Added note on max measurements
Updated cover sheet statement of 700 million units to one billion
06/26/00
-006
Corrected Table 10 to show correct maximum program times
Corrected error in Max block program time in section 6.7
Corrected typical erase time in section 6.7
Updated cover page to reflect 100K minimum erase cycles
Updated cover page to reflect 110 ns 32M read speed
Removed Set Read Configuration command from Table 4
Updated Table 8 to reflect reserved bits are 1-7; not 2-7
Updated Table 16 bit 2 definition from R to PSS
2/15/01
-007
Changed V
PENLK
Max voltage from 0.8 V to 2.0 V, Section 6.4,
DC
Characteristics
Updated 32Mbit Read Parameters R1, R2 and R3 to reflect 110ns, Section 6.5,
AC Characteristics–Read-Only Operations
(1,2)
Updated write parameter W13 (t
WHRL
) from 90 ns to 500 ns, Section 6.6,
AC
Characteristics–Write Operations
Updated Max. Program Suspend Latency W16 (t
WHRH1
) from 30 to 75 µs,
Section 6.7,
Block Erase, Program, and Lock-Bit Configuration Performance
Description
(1,2,3)
04/13/01
-008
Revised Section 7.0,
Ordering Information
Datasheet
5
模拟电子
