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RD120FM

120 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

器件类别:分立半导体    二极管   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

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器件参数
参数名称
属性值
是否无铅
含铅
厂商名称
Renesas(瑞萨电子)
针数
2
Reach Compliance Code
unknow
ECCN代码
EAR99
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To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
ZENER DIODES
RD2.0FM to RD120FM
ZENER DIODES
1 W PLANAR TYPE 2 PIN POWER MINI MOLD
DESCRIPTION
These products are zener diodes with an allowable power
dissipation of 1 W and a planar type 2 pin power mini mold
package.
PACKAGE DIMENSION
(Unit: mm)
4.7 ±0.3
4.3 ±0.1
<R>
FEATURES
area is reduced to about 65% compared with that of the 3-
pin power mini mold RD**P, which has been conventionally
used until now.
1.4 ±0.1
0 to 0.15
Suitable for high-density mounting because the mounting
1.3 ±0.2
1.55 ±0.1
while having the same Zener voltage classification as that
for RD**Ps.
APPLICATIONS
Zener voltage and constant-current circuit
Waveform clipper circuit and limiter circuit
Surge absorption circuit
Cathode
Indication
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Power dissipation
Forward current
Symbol
P
I
F
P
RSM
T
j
T
stg
Ratings
1.0
200
400
150
−55
to +150
Unit
W
mA
W
°C
°C
t = 10
μ
s
Remarks
Refer to Figure 1.
<R>
Surge reverse power
Junction temperature
Storage temperature
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D16083EJ2V0DS00 (2nd edition)
Date Published September 2006 NS CP(K)
Printed in Japan
2.5 ±0.1
Achieves flat-surface mounting with a two-pin structure,
1.1 ±0.1 0.8 ±0.1
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
RD2.0FM to RD120FM
ELECTRICAL CHARACTERISTICS (T
A
= 25 ±2°C)
Type Number
Class
MIN.
RD2.0FM
RD2.2FM
RD2.4FM
RD2.7FM
RD3.0FM
RD3.3FM
RD3.6FM
RD3.9FM
RD4.3FM
RD4.7FM
RD5.1FM
RD5.6FM
RD6.2FM
RD6.8FM
RD7.5FM
RD8.2FM
RD9.1FM
RD10FM
RD11FM
RD12FM
RD13FM
RD15FM
RD16FM
RD18FM
RD20FM
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
1.9
2.1
2.3
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.3
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
53.0
58.0
64.0
Zener Voltage
V
Z
(V)
Note1
(1/2)
Dynamic Impedance
Z
Z
(Ω)
Note2
Reverse Current
I
R
(
μ
A)
MAX.
200
200
200
150
100
80
60
40
20
20
20
20
20
20
20
20
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
V
R
(V)
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10
11
12
13
15
17
19
21
23
25
27
30
33
36
39
43
47
52
MAX.
2.2
2.4
2.6
2.9
3.2
3.5
3.8
4.1
4.5
4.9
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.6
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
45.0
49.0
54.0
60.0
66.0
72.0
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
MAX.
140
140
140
140
140
140
140
140
140
100
100
70
40
25
25
25
25
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
220
220
220
230
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
<R>
<R>
RD22FM
RD24FM
RD27FM
RD30FM
RD33FM
RD36FM
RD39FM
RD43FM
RD47FM
RD51FM
RD56FM
RD62FM
RD68FM
Note 1.
V
Z
is tested with pulsed (40 ms).
2.
Z
Z
is measured at I
Z
by given a very small A.C. signal.
2
Data Sheet D16083EJ2V0DS
RD2.0FM to RD120FM
ELECTRICAL CHARACTERISTICS (T
A
= 25 ±2°C)
Type Number
Class
MIN.
RD75FM
RD82FM
RD91FM
RD100FM
RD110FM
RD120FM
B
B
B
B
B
B
70.0
77.0
85.0
94.0
104.0
114.0
Zener Voltage
V
Z
(V)
Note1
(2/2)
Dynamic Impedance
Z
Z
(Ω)
I
Z
(mA)
2
2
2
2
2
2
MAX.
250
270
340
430
530
620
Note2
Reverse Current
I
R
(
μ
A)
MAX.
5
5
5
5
5
5
V
R
(V)
57
63
69
76
84
91
MAX.
79.0
87.0
96.0
106.0
116.0
126.0
I
Z
(mA)
2
2
2
2
2
2
Note 1.
V
Z
is tested with pulsed (40 ms).
2.
Z
Z
is measured at I
Z
by given a very small A.C. signal.
Data Sheet D16083EJ2V0DS
3
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参数对比
与RD120FM相近的元器件有:RD100FM、RD110FM、RD20FM-T1-AZ、RD75FM、RD82FM、RD91FM。描述及对比如下:
型号 RD120FM RD100FM RD110FM RD20FM-T1-AZ RD75FM RD82FM RD91FM
描述 120 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 100 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 110 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 100 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 75 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 82 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 91 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
针数 2 2 2 2 2 2 2
Reach Compliance Code unknow unknow unknow compli unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
是否无铅 含铅 含铅 含铅 - 含铅 含铅 含铅
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) -
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