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RD38F2030W0YBQ2

Memory Circuit, Flash+PSRAM+SRAM, 4MX16, CMOS, PBGA88, 8 X 10 MM, 1.20 MM HEIGHT, STACK, CSP-88

器件类别:存储    存储   

厂商名称:Intel(英特尔)

厂商官网:http://www.intel.com/

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Intel(英特尔)
零件包装代码
BGA
包装说明
TFBGA, BGA88,8X12,32
针数
88
Reach Compliance Code
unknown
最长访问时间
70 ns
其他特性
CONTAINS 16 MBIT PSRAM, ALSO CONTAINS 64 MBIT FLASH
JESD-30 代码
R-PBGA-B88
JESD-609代码
e0
长度
10 mm
内存密度
67108864 bit
内存集成电路类型
MEMORY CIRCUIT
内存宽度
16
混合内存类型
FLASH+PSRAM+SRAM
功能数量
1
端子数量
88
字数
4194304 words
字数代码
4000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-25 °C
组织
4MX16
封装主体材料
PLASTIC/EPOXY
封装代码
TFBGA
封装等效代码
BGA88,8X12,32
封装形状
RECTANGULAR
封装形式
GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
1.8,3 V
认证状态
Not Qualified
座面最大高度
1.2 mm
最大待机电流
0.0001 A
最大压摆率
0.055 mA
最大供电电压 (Vsup)
1.95 V
最小供电电压 (Vsup)
1.7 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
OTHER
端子面层
Tin/Lead (Sn/Pb)
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
8 mm
文档预览
Intel
®
Wireless Flash Memory
(W18/W30 SCSP)
32WQ and 64WQ Family with Asynchronous RAM
Datasheet
Product Features
Device Architecture
— Flash Density: 32-Mbit, 64-Mbit
— Async PSRAM Density: 8-, 16-, 32-
Mbit; Async SRAM Density: 4-, 8-, 16-
Mbit
— Top, Bottom or Dual flash parameter
configuration
Device Voltage
— Flash V
CC
= 1.8 V; Flash V
CCQ
= 1.8 V
or 3.0 V
— RAM V
CC
= 3.0 V; RAM V
CCQ
= 1.8 V
or 3.0 V
Device Packaging
— 88 balls (8 x 10 active ball matrix);
Area: 8x10 mm; Height: 1.2 mm to 1.4
mm
PSRAM Performance
— 70 ns initial access, 25 ns async page
reads at 1.8 V I/O
— 70 ns initial access async PSRAM at
1.8V I/O
— 88 ns initial access, 30 ns async page
reads at 1.8 V I/O
— 85 ns initial access, 35 ns async page
reads at 3.0 V I/O
— 70 ns initial access, 25 ns async page
reads at 3.0 V I/O
SRAM Performance
— 70 ns initial access at 1.8 V or 3.0 V I/O
Flash Performance
— 65 ns initial access at 1.8 V I/O
— 70 ns initial access at 3.0 V I/O
— 25 ns async page at 1.8 V or 3.0 V I/O
— 14 ns sync reads (t
CHQV
) at 1.8 V I/O
— 20 ns sync reads (t
CHQV
) at 3.0 V I/O
— Enhanced Factory Programming:
3.10 µs/Word (Typ)
Flash Architecture
— Read-While-Write/Erase
— Asymmetrical blocking structure
— 4-KWord parameter blocks (Top or
Bottom); 32-KWord main blocks
— 4-Mbit partition size
— 128-bit One-Time Programmable (OTP)
Protection Register
— Zero-latency block locking
— Absolute write protection with block
lock using F-VPP and F-WP#
Flash Software
— Intel
®
Flash Data Integrator (FDI) and
Common Flash Interface (CFI)
Quality and Reliability
— Extended Temperature: –25 °C to +85 °C
— Minimum 100K flash block erase cycle
— 90 nm ETOX™ IX flash technology
— 130 nm ETOX™ VIII flash technology
The Intel
®
Wireless Flash Memory (W18/W30 SCSP) family offers various flash plus static
RAM combinations in a common package footprint. The flash memory features 1.8 V low-
power operations with flexible, multi-partition, dual-operation Read-While-Write / Read-While-
Erase, asynchronous, and synchronous reads. This SCSP device integrates up to two flash die,
one PSRAM die, and one SRAM die in a low-profile package compatible with other SCSP
families with QUAD+ ballout.
Order Number: 251407, Revision: 010
18-Oct-2005
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN
INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS
ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES
RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER
INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or
in nuclear facility applications.
Le ga l Lin es an d Discla ime rs
Intel may make changes to specifications and product descriptions at any time, without notice.
Intel Corporation may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the
presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by
estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an order number and are referenced in this document, or other Intel literature may be obtained by calling
1-800-548-4725 or by visiting Intel's website at
http://www.intel.com.
*Other names and brands may be claimed as the property of others.
Copyright © 2005, Intel Corporation. All Rights Reserved.
18-Oct-2005
2
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 010
Datasheet
32WQ and 64WQ Family—Intel® Wireless Flash Memory (W18/W30 SCSP)
1.0
Introduction....................................................................................................................................6
1.1
1.2
Nomenclature ....................................................................................................................... 6
Conventions.......................................................................................................................... 6
2.0
Functional Overview
.....................................................................................................................8
2.1
2.2
Block Diagram ...................................................................................................................... 8
Flash Memory Map and Partitioning ..................................................................................... 9
3.0
4.0
Package Information
...................................................................................................................11
Ballout and Signal Description
..................................................................................................13
4.1
4.2
Signal Ballout......................................................................................................................13
Signal Descriptions .............................................................................................................14
5.0
Maximum Ratings and Operating Conditions...........................................................................16
5.1
5.2
5.3
Absolute Maximum Ratings ................................................................................................ 16
Operating Conditions .......................................................................................................... 17
Capacitance........................................................................................................................ 17
6.0
Electrical Specifications
.............................................................................................................18
6.1
DC Characteristics.............................................................................................................. 18
7.0
AC Characteristics
......................................................................................................................21
7.1
7.2
7.3
7.4
Flash AC Characteristics ....................................................................................................21
SRAM AC Characteristics...................................................................................................21
PSRAM AC Characteristics ................................................................................................ 24
Device AC Test Conditions................................................................................................. 29
8.0
9.0
Flash Power Consumption
.........................................................................................................30
Device Operation
......................................................................................................................... 31
9.1
9.2
Bus Operations ...................................................................................................................31
Flash Command Definitions................................................................................................ 34
10.0 Flash Read Operations
............................................................................................................... 35
11.0 Flash Program Operations
.........................................................................................................36
12.0 Flash Erase Operations
.............................................................................................................. 37
13.0 Flash Security Modes..................................................................................................................
38
14.0 Flash Read Configuration Register
........................................................................................... 39
15.0 SRAM Operations
........................................................................................................................ 40
15.1
15.2
Power-up Sequence and Initialization ................................................................................ 40
Data Retention Mode.......................................................................................................... 40
16.0 PSRAM Operations......................................................................................................................42
16.1
16.2
16.3
Power-Up Sequence and Initialization................................................................................ 42
16.1.1 16Mbit PSRAM Power-Up Sequence (Non-Page Mode).......................................42
Standby Mode/ Deep Power-Down Mode .......................................................................... 43
PSRAM Special Read and Write Constraints .....................................................................43
Datasheet
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 010
18-Oct-2005
3
Intel® Wireless Flash Memory (W18/W30 SCSP)—32WQ and 64WQ Family
Appendix A Write State Machine
........................................................................................................ 45
Appendix B Common Flash Interface.................................................................................................
46
Appendix C Flash Flowcharts
.............................................................................................................47
Appendix D Additional Information
.................................................................................................... 48
Appendix E Ordering Information
....................................................................................................... 49
18-Oct-2005
4
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 010
Datasheet
32WQ and 64WQ Family—Intel® Wireless Flash Memory (W18/W30 SCSP)
Revision History
Date
June 2003
September
2003
May 2004
Revision
-001
-002
-006
Initial release.
Changed PSRAM Read values.
Added new Transient Equivalent Testing Load Circuit figure.
General text edits.
Reformatted the datasheet and moved sections around according to the new layout.
Added 90 nm product information.
Added line items to
Table 21 “32WQ and 64WQ W18/W30 SCSP Ordering Information (Flash
Only)” on page 50.
Added DC and AC specs for the new line items and edits to related sections.
Added line items to
Table 21 “32WQ and 64WQ W18/W30 SCSP Ordering Information (Flash
Only)” on page 50
Added 32WQ product information.
June 2005
October 2005
-009
-010
Added line items to
Table 21 “32WQ and 64WQ W18/W30 SCSP Ordering Information (Flash
Only)” on page 50
Removed Power-up sequence from Section 16; Added 70ns PSRAM (non-page mode)
specification Updated Ordering Information
Description
August 2004
-007
January 2005
-008
Datasheet
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 010
18-Oct-2005
5
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