RF2103P
0
RoHS Compliant & Pb-Free Product
Typical Applications
• Digital Communication Systems
• Portable Battery-Powered Equipment
• Spread-Spectrum Communication Systems • Commercial and Consumer Systems
• Driver for Higher Power Linear Applications • Base Station Equipment
Product Description
The RF2103P is a medium power linear amplifier IC. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final linear RF amplifier in
UHF radio transmitters operating between 450MHz and
1000MHz. It may also be used as a driver amplifier in
higher power applications. The device is self-contained
with the exception of the output matching network, power
supply feed line, and bypass capacitors, and it produces
an output power level of 750mW (CW). The device can
be used in 3 cell battery applications. The maximum CW
output at 3.6V is 175mW. The unit has a total gain of
31dB, depending upon the output matching network.
0.156
0.148
.018
.014
MEDIUM POWER LINEAR AMPLIFIER
0.010
0.004
0.347
0.339
0.050
0.252
0.236
0.059
0.057
8° MAX
0° MIN
0.0500
0.0164
0.010
0.007
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: SOIC-14
Features
• 450MHz to 1000MHz Operation
• Up to 750mW CW Output Power
• 31dB Small Signal Gain
RF IN 1
GND 2
GND 3
PD 4
VCC1 5
VCC2 6
PRE AMP PWR 7
PRE AMP
FPA
14 RF OUT
13 RF OUT
12 GND
11 GND
10 GND
9 RF OUT
8 RF OUT
• Single 2.7V to 7.5V Supply
• 47% Efficiency
• Digitally Controlled Power Down Mode
BIAS
CIRCUITS
Ordering Information
RF2103P
Medium Power Linear Amplifier
RF2103PPCBA-41XFully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B2 060202
2-7
RF2103P
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Down Voltage (V
PD
)
DC Supply Current
Input RF Power
Output Load VSWR
Operating Case Temperature
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +7.5
-0.5 to +5
350
+12
10:1
-40 to +100
-40 to +85
-40 to +150
Unit
V
DC
V
mA
dBm
°C
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Frequency Range
Maximum Output Power
Maximum Output Power
Second Harmonic
Third Harmonic
Output Noise Power
Input Impedance
Input VSWR
Output Impedance
Specification
Min.
Typ.
Max.
Unit
Condition
T=25 °C, V
CC
=5.8V, V
PD
=5.0V,
Z
LOAD
=18Ω, P
IN
=0dBm, Freq=915MHz
450 to 1000
+28.8
+26.5
-24
-30
<-125
50
<2:1
18+j0
MHz
dBm
dBm
dBc
dBc
dBm/Hz
Ω
V
CC
=7.5V
V
CC
=5.8V
Without external second harmonic trap
Ω
Nominal 5.8V
Configuration
Linear Power Gain
Saturated CW Output Power
IM
3
IM
5
Collector Current, I
CC
V
PD
Current
CW Total Efficiency
Two Tone Total Efficiency
24
31
+26.5
-40
-45
175
<3.5
47
26
2.7 to 7.5
45
1
<100
dB
dBm
dBc
dBc
mA
mA
%
%
V
mA
μ
A
ns
With external matching network; see appli-
cation schematic
With external matching network; see appli-
cation schematic
Load Impedance for Optimal Match
V
CC
=5.8V, V
PD
=4.0V, Z
LOAD
=18Ω,
P
IN
=0dBm, Freq=830MHz
-25
-30
250
P
OUT
=+18.5dBm/tone
P
OUT
=+18.5dBm/tone
Total of pins 7 and 8
Into pin 4
P
OUT
=+18.5dBm/tone
Power Supply
Power Supply Voltage
Power Supply Idle Current
Total "OFF" Current Drain
Turn-on Time
80
10
V
PD
<0.1V
DC
V
PD
=0 to V
PD
=+4V
DC
2-8
Rev B2 060202
RF2103P
Pin
1
2
3
4
Function
RF IN
GND
GND
PD
Description
RF input pin. There is an internal blocking capacitor between this pin
and the preamp input, but not between the pin and an internal 2kΩ
resistor to ground.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
Same as pin 2.
Power down control voltage. When this pin is at 0V, the device will be in
power down mode, dissipating minimum DC power. When this pin is at
V
CC
(3V to 6.5V), the device will be in full power mode delivering maxi-
mum available gain and output power capability. This pin may also be
used to perform some degree of gain control or power control when set
to voltages between 0V and V
CC
. It is not optimized for this function so
the transfer function is not linear over a wide range as with other
devices specifically designed for analog gain control; however, it may
be usable for coarse adjustment or in some closed loop AGC systems.
This pin should not, in any circumstance, be higher in voltage than V
CC
.
This pin should also have an external bypassing capacitor.
Positive supply for the active bias circuits. This pin can be externally
combined with pin 6 (VCC2) and the pair bypassed with a single capac-
itor, placed as close as possible to the package. Additional bypassing
of 1
μ
F is also recommended, but proximity to the package is not as crit-
ical. In most applications, pins 5, 6, and 7 can share a single 1
μ
F
bypass capacitor.
Same as pin 5.
Positive supply for the pre-amplifier. This is an unmatched transistor
collector output. This pin should see an inductive path to AC ground
(V
CC
with bypass capacitor). This inductance can be achieved with a
short, thin microstrip line or with a low value chip inductor (approxi-
mately 1.8nH). At lower frequencies, the inductance value should be
larger (longer microstrip line) and V
CC
should be bypassed with a
larger bypass capacitor. This inductance forms a matching network
with the internal series capacitor between the two amplifier stages, set-
ting the amplifier’s frequency of maximum gain. An additional 1μF
bypass capacitor in parallel with the 100pF bypass capacitor is also
recommended, but placement of this component is not as critical. In
most applications, pins 5, 6, and 7 can share a single 1μF bypass
capacitor.
Same as pin 14.
Same as pin 14.
Same as pin 2.
Same as pin 2.
Same as pin 2.
Same as pin 14.
Interface Schematic
5
VCC1
6
7
VCC2
PREAMP
PWR
8
9
10
11
12
13
RF OUT
RF OUT
GND
GND
GND
RF OUT
Rev B2 060202
2-9
RF2103P
Pin
14
Function
RF OUT
Description
Amplifier RF output. This is an unmatched collector output of the final
amplifier transistor. It is internally connected to pins 8, 9, 13 and 14 to
provide low series inductance and flexibility in output matching. Bias for
the final power amplifier output transistor must also be provided
through two of these four pins. Typically, pins 8 and 9 are connected to
a network that provides the DC bias and also creates a second har-
monic trap. For 915MHz operation, this harmonic trap network is simply
a single 2pF capacitor from both pins to ground. This capacitor series
resonates with internal bond wires at two times the operating fre-
quency, effectively shorting out the second harmonic. Shorting out this
harmonic serves to increase the amplifier’s maximum output power and
efficiency, as well as to lower the level of the second harmonic output.
Typically, pins 13 and 14 are externally connected very close to the
package and used as the RF output with a matching network that pre-
sents the optimum load impedance to the PA for maximum power and
efficiency, as well as providing DC blocking at the output. Shunt protec-
tion diodes are included to clip peak voltage excursions above approxi-
mately 15V to prevent voltage breakdown in worst case conditions.
Interface Schematic
Application Schematic
6.8 nH
RF IN
12 nH
22
Ω
1
PRE AMP
2
3
V
B
V
CC
For lower frequency
operation: Cut trace
on board and insert
inductor L4
1
μF
100
pF
100 pF
4
5
6
7
100 pF
.01" x .2"
(PCB material: FR-4,
Thickness:0.031")
BIAS
CIRCUITS
11
10
9
L2
8
C2
330 pF
V
CC
FPA
14
C1
13
12
For lower frequenc
operation: Cut trac
on board and inser
inductor L3
L1
RF OUT
FREQUENCY (MHz) (nH) L2 (nH) L3 (nH) L4 (nH) C1 (pF) C2 (pF)
L1
275
480
915
20
12
6.8
15
6.8
3.3
10
4.7
20
18
20
12
4
10
6.8
2
2-10
Rev B2 060202
RF2103P
Evaluation Board Schematic
915MHz Operation
(Download Bill of Materials from www.rfmd.com.)
P1-1
C6
1 nF
C8
1 nF
P1
1
2
VCC
GND
VB
P1-3
3
2103400 Rev C
SMA
J1 50
Ω μ
strip
RF IN
L3
12 nH
L4
6.8 nH
R1
22
Ω
1
2
3
4
5
6
P1-1
7
C10
0.01" x 0.2"
100 pF
(PCB mat'l: FR-4,
Thickness: 0.031")
PRE
AMP
FPA
14
50
Ω μ
strip
13
12
11
10
9
8
L2
3.3 nH
C7
2 pF
C5
330 pF
P1-1
C4
4 pF
L1
6.8 nH
RF OUT
J2
50
Ω
Matching Network
P1-3
P1-1
C1
100 pF
BIAS
CIRCUITS
C2
100 pF
C3
100 pF
C9
100 pF
Rev B2 060202
2-11
FPGA/CPLD
