RF2334
4
Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Broadband Test Equipment
GENERAL PURPOSE AMPLIFIER
Product Description
The RF2334 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 4000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2334 is avail-
able in a very small industry-standard SOT23 5-lead sur-
face mount package, enabling compact designs which
conserve board space.
1.60
+ 0.01
0.400
1
4
GENERAL PURPOSE
AMPLIFIERS
0.15
0.05
2.90
+ 0.10
0.950
2.80
+ 0.20
3° MAX
0° MIN
0.45
+ 0.10
0.127
1.44
1.04
Dimensions in mm.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
!
GaAs HBT
SiGe HBT
Package Style: SOT 5 Lead
GaAs MESFET
Si CMOS
Features
• DC to 4000MHz Operation
• Internally matched Input and Output
• 16dB Small Signal Gain
• 5dB Noise Figure
• 50mW Linear Output Power
• Single Positive Power Supply
GND 1
GND 2
RF IN 3
5 RF OUT
4 GND
Ordering Information
RF2334
RF2334 PCBA
General Purpose Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 001201
4-143
RF2334
Absolute Maximum Ratings
Parameter
Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Rating
120
+13
-40 to +75
-60 to +150
Unit
mA
dBm
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Specification
Min.
Typ.
Max.
DC to 4000
2.5
19.4
18
16
14
13
±2
4.8
2.1:1
1.8:1
+33
+18.5
20.5
4.8
65
Unit
MHz
GHz
dB
dB
dB
dB
dB
dB
Condition
T=25°C, I
CC
=65mA
4
GENERAL PURPOSE
AMPLIFIERS
Frequency Range
3dB Bandwidth
Gain
Gain Flatness
Noise Figure
Input VSWR
Output VSWR
Output IP
3
Output P
1dB
Reverse Isolation
dBm
dBm
dB
V
mA
Power Supply
Device Operating Voltage
Operating Current
Freq=100MHz
Freq=1000MHz
Freq=2000MHz
Freq=3000MHz
Freq=4000MHz
100MHz to 2000MHz
Freq=2000MHz
In a 50Ω system, DC to 4000MHz
In a 50Ω system, DC to 4000MHz
Freq=1000MHz±50kHz, P
TONE
=-10dBm
Freq=1000MHz
Freq=2000MHz
With 22Ω bias resistor
At pin 5 with I
CC
=65mA
4-144
Rev A4 001201
RF2334
Pin
1
2
3
Function
GND
GND
RF IN
Description
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
Same as pin 1.
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
Same as pin 1.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
CC
. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
RF OUT
Interface Schematic
4
5
GND
RF OUT
4
RF IN
Care should also be taken in the resistor selection to
ensure that the
current into the part never exceeds 120 mA over the planned oper-
ating temperature.
This means that a resistor between the supply and
this pin is always required, even if a supply near 4.9V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1
1
2
3
VCC
GND
NC
1
C1
100 pF
2
3
4
233X410-
VCC
P1-1
R1
22
Ω
L1
100 nH
5
C2
100 pF
C3
100 pF
C4
1
µF
50
Ω µstrip
J2
RF OUT
J1
RF IN
50
Ω µstrip
Rev A4 001201
4-145
GENERAL PURPOSE
AMPLIFIERS
(
V
SUPPLY
–
V
DEVICE
)
-
= ------------------------------------------------------
R
I
CC
RF2334
Evaluation Board Layout
Board Size 1” x 1”
4
GENERAL PURPOSE
AMPLIFIERS
4-146
Rev A4 001201
模拟与混合信号
