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RF2362

Wide Band Low Power Amplifier, 150MHz Min, 2500MHz Max, 1 Func, GAAS, PLASTIC, SOT-23, 5 PIN

器件类别:无线/射频/通信    射频和微波   

厂商名称:Qorvo

厂商官网:https://www.qorvo.com

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Qorvo
包装说明
TSOP5/6,.11,37
Reach Compliance Code
unknown
ECCN代码
5A991.G
其他特性
LOW NOISE
特性阻抗
50 Ω
构造
COMPONENT
增益
19 dB
最大输入功率 (CW)
10 dBm
JESD-609代码
e0
安装特点
SURFACE MOUNT
功能数量
1
端子数量
5
最大工作频率
2500 MHz
最小工作频率
150 MHz
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装等效代码
TSOP5/6,.11,37
电源
2.7/3.5 V
射频/微波设备类型
WIDE BAND LOW POWER
最大压摆率
43 mA
表面贴装
YES
技术
GAAS
端子面层
Tin/Lead (Sn/Pb)
最大电压驻波比
2
文档预览
RF2362
4
Typical Applications
• TDMA/CDMA/FM PCS Tx Amplifier
• Low Noise Transmit Driver Amplifier
• 2.4GHz WLAN Systems
• General Purpose Amplification
• Commercial and Consumer Systems
PCS CDMA/TDMA 3V
PA DRIVER AMPLIFIER
Product Description
The RF2362 is a low noise CDMA/TDMA PA driver ampli-
fier with a very high dynamic range designed for transmit
digital PCS applications at 1880MHz. The device func-
tions as an outstanding PA driver amplifier in the transmit
chain of digital subscriber units where low transmit noise
power is a concern. The IC includes a power down fea-
ture that can be used to completely turn off the device.
The IC is featured in a standard SOT 5-lead plastic pack-
age.
1.60
+ 0.01
0.400
1
4
GENERAL PURPOSE
AMPLIFIERS
0.15
0.05
2.90
+ 0.10
0.950
2.80
+ 0.20
3° MAX
0° MIN
0.45
+ 0.10
0.127
1.44
1.04
Dimensions in mm.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
SiGe HBT
Package Style: SOT 5-Lead Package
GaAs MESFET
Si CMOS
Features
• Low Noise and High Intercept Point
• Adjustable Bias Current
• Power Down Control
R F IN 1
5 GND2
• Single 2.5V to 6.0V Power Supply
• 150MHz to 2500MHz Operation
• Extremely Small SOT23-5 Package
GND1 2
VPD 3
4 RF O UT
Ordering Information
RF2362
RF2362 PCBA
PCS CDMA/TDMA 3V PA Driver Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 010720
4-193
RF2362
Absolute Maximum Ratings
Parameter
Supply Voltage
Input RF Level
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +8.0
+10
-40 to +85
-40 to +150
Unit
V
DC
dBm
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Specification
Min.
Typ.
Max.
150 to 2500
Unit
MHz
Condition
4
GENERAL PURPOSE
AMPLIFIERS
RF Frequency Range
1880MHz Performance
Gain
19
19
19
+24
20.1
20.1
20.1
+25.5
+25.0
+24.5
2.2
2.2
2.2
32
32
32
1.8:1
1.6:1
14.5
14
13.5
2.5 to 6.0
2.8
35
21.5
21.5
21.5
+35
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
Output IP3
Noise Figure
2.5
2.5
2.5
Reverse Isolation
Schematic per Evaluation Board, T = 25°C,
RF=1880MHz, V
PD
=2.8V
V
CC
=3.5V
V
CC
=3.0V
V
CC
=2.7V
V
CC
=3.5V
V
CC
=3.0V
V
CC
=2.7V
V
CC
=3.5V
V
CC
=3.0V
V
CC
=2.7V
V
CC
=3.5V
V
CC
=3.0V
V
CC
=2.7V
Using External LC network used on Evalua-
tion Board
V
CC
=3.5V
V
CC
=3.0V
V
CC
=2.7V
T = 25 °C
Input VSWR
Output VSWR
P
1dB
14
12.5
11
2.0:1
2.0:1
dBm
dBm
dBm
V
V
mA
Power Supply
Voltage (V
CC
)
Voltage (V
PD
)
Current Consumption
2.7
24
2.9
43
24
29
- Power Down
32
37
38
43
10
mA
mA
µΑ
V
CC
=3.5V; V
PD
=2.8 V; V
PD
+ V
CC
- Current
Consumption from V
PD
is 8.5 mA Typ. @
V
PD
= 2.8V and 12 mA Max @ V
PD
=2.9 V
V
CC
=3.0V; V
PD
=2.7V; V
PD
+ V
CC
V
CC
=2.7V; V
PD
=2.9V; V
PD
+ V
CC
V
CC
=3.5V; V
PD
0.9V
4-194
Rev A4 010720
RF2362
Pin
1
Function
RF IN
Description
RF input pin. This pin is DC-coupled and matched to 50Ω at 1880MHz.
PD
Interface Schematic
RF IN
TO OUTPUT
STAGE
2
3
GND1
VPD
4
RF OUT
5
GND2
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V
CC
or pin 4 through a choke or matching inductor.
This pin is typically matched to 50Ω with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application sche-
matics.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
Rev A4 010720
4-195
GENERAL PURPOSE
AMPLIFIERS
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
Power Down for the IC. V
PD
= 2.8V +/- 0.1V turns on the part.
V
PD
<0.9V turns off the part. External RF bypassing is required. The
trace length between the pin and the bypass capacitors should be min-
imized. The ground side of the bypass capacitors should connect
immediately to ground plane. Nominal current required for V
PD
= 2.8V
is 8.5 mA typical and 12 mA Max (@ V
PD
=2.9 V).
PD
4
RF2362
Application Schematic:
~1880 MHz Operation, Internal Collector Bias
J1
RF IN
10 pF
1
5
2
R1
0
VPD
3
10 nF
220 pF
4
4.7 nH
VCC
220 pF
10 nF
1 pF
J2
RF OUT
4
GENERAL PURPOSE
AMPLIFIERS
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1
1
2
3
C7
4.7
µF
C3
4 pF
1
5
VPD
GND
VCC
J1
RF IN
50
Ω µstrip
2
R1
0
VPD
C1
10 nF
C2
220 pF
2362400-
50
Ω µstrip
3
4
L1
4.7 nH
C4
1 pF
50
Ω µstrip
J2
RF OUT
VCC
C5
220 pF
C6
10 nF
4-196
Rev A4 010720
RF2362
Evaluation Board Layout
Board Size 1” x 1”
Board Thickness 0.014”; Board Material FR-4
4
GENERAL PURPOSE
AMPLIFIERS
Rev A4 010720
4-197
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