首页 > 器件类别 > 无线/射频/通信 > 射频和微波
 PDF数据手册

RF2375

描述:
RF/Microwave Amplifier, 1 Func, BICMOS
分类:
文件大小:
62KB,共4页
制造商:
概述
RF/Microwave Amplifier, 1 Func, BICMOS
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
包装说明
TSSOP8,.1
Reach Compliance Code
unknown
JESD-609代码
e0
安装特点
SURFACE MOUNT
功能数量
1
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装等效代码
TSSOP8,.1
电源
3/3.3 V
最大压摆率
7 mA
表面贴装
YES
技术
BICMOS
端子面层
Tin/Lead (Sn/Pb)
文档预览
Preliminary
4
Typical Applications
• LNA for DCS 1800/1900 Handsets
• IF or RF Buffer Amplifiers
RF2375
3V DCS LOW NOISE AMPLIFIER
• Driver Stage for Power Amplifiers
• Oscillator Loop Amplifiers
Product Description
The RF2375 is a general purpose, low-cost, high perfor-
mance, low noise amplifier designed for operation from a
2.7V to 4V supply with low current consumption. The
attenuation of the device is controlled when in power
down mode, providing a known gain step. The input IP
3
can be set with an external resistor to allow maximizing of
the dynamic range of the receiver design. The RF2375 is
available in a small industry-standard SOT-23-8 lead sur-
face mount package, enabling compact designs which
conserve board space. PTAT (Proportional To Absolute
Temperature) bias currents are used to bias the LNA.
1.59
1.61
0.365
0.15
0.05
4
GENERAL PURPOSE
AMPLIFIERS
0.127
TEXT*
2.80
3.00
0.650
2.60
3.00
*When Pin 1 is in
upper left, text
reads downward
(as shown).
3°MAX
0°MIN
1.44
1.04
0.35
0.55
Optimum Technology Matching® Applied
Package Style: SOT-23-8
ü
Si Bi-CMOS
Si BJT
GaAs HBT
SiGe HBT
GaAs MESFET
Si CMOS
Features
• 700MHz to 2000MHz Operation
• 2.7V to 3.6V Single Supply
• -5dBm Input IP
3
at 5.3mA
• 18dB Gain at 1950MHz
• 2.5dB Noise Figure
• 25dB Gain Step
RF IN 1
GND2 2
GND1 3
BIAS
GND3 4
8 RF OUT
7 ISET
6 VCC
5 ENABLE
Ordering Information
RF2375
RF2375 PCBA
3V DCS Low Noise Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A2 010126
4-227
RF2375
Absolute Maximum Ratings
Parameter
Supply Voltage
Supply Current
Operating Ambient Temperature
Storage Temperature
Preliminary
Rating
4.0
20
-40 to +85
-40 to +150
Unit
V
mA
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
700 to 2000
16
-6
18
2.5
-5
-18.5
2:1
1.5:1
-7
CMOS High
CMOS Low
1
2.7 to 3.6
5.3
Unit
MHz
dB
dB
dBm
dBm
dB
dB
dB
V
V
µA
V
mA
µA
Condition
T=27 °C, V
CC
=2.7V, Freq=1950MHz
4
GENERAL PURPOSE
AMPLIFIERS
Overall
Frequency Range
LNA Performance
Gain
Noise Figure
Input IP3
Input P1dB
Input VSWR
Output VSWR
Off Mode Gain
At 5.3mA
Power Control
Power “ON” Voltage
Power “OFF” Voltage
Current into ENABLE
Voltage on ENABLE
Voltage on ENABLE
V
ENABLE
=2.7V
Power Supply
Operating Voltage
Operating Current
Leakage Current
7
1
V
CC
=2.7V, R
ISET
=15kΩ
V
ENABLE
=0V
4-228
Rev A2 010126
Preliminary
Pin
1
2
3
4
5
6
7
8
Function
RF IN
GND2
GND1
GND3
ENABLE
VCC
ISET
RF OUT
Description
RF input pin. This pin is not internally DC blocked and requires an
external blocking capacitor. The input impedance of this pin is internally
matched to 50Ω using feedback.
Ground connection for the bias circuits.
Ground connection for the LNA. Keep traces physically short and con-
nect immediately to ground plane for best performance.
Same as pin 3.
Power down control. This is a CMOS input. When this pin is CMOS
“high” the device is enabled. When the level is CMOS “low” the device
is shut off and a controlled attenuator is turned on.
Power supply for the bias circuits.
This pin sets the current for the device. A resistor to ground of 15kΩ
provides a current of 5.3mA.
RF output pin. The output impedance of this pin is internally matched to
50Ω using feedback. Bias for the LNA is provided through this pin,
hence it should be connected to VCC through an inductor.
RF2375
Interface Schematic
4
GENERAL PURPOSE
AMPLIFIERS
RF OUT
1 pF
15 k
V
CC
ENABLE
Application Schematic
V
CC
3.6 nH
22 nF
RF IN
33 nH
1
2
3
BIAS
4
5
8
7
6
Rev A2 010126
4-229
RF2375
Evaluation Board Schematic
RF=1950MHz
(Download Bill of Materials from www.rfmd.com.)
VCC
Preliminary
L1
3.6 nH
C2
1 pF
1
L2
33 nH
2
3
BIAS
4
5
8
7
6
R1
15 k
50Ω
µstrip
J1
LNA OU
4
GENERAL PURPOSE
AMPLIFIERS
J2
LNA IN
50Ω
µstrip
C1
22 nF
VCC
ENABLE
IPSET
ENABLE
VCC
P1
1
2
VCC1
ENABLE
IPSET
+
ENVCC
2.6 V
-
C3
1 nF
C4
1 uF
+
C5
22 nF
+
VCC
-
2.7 V
3
GND
4
CON4
Evaluation Board Layout
Board Size 1.0" x 1.0"
Board Thickness 0.031”, FR-4
Assembly
Top
Back
4-230
Rev A2 010126
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
索引文件:
653  485  480  839  1659  14  10  17  34  1 
需要登录后才可以下载。
登录取消
下载 PDF 文件