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RF2442

500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

器件类别:热门应用    无线/射频/通信   

厂商名称:RF Micro Devices (Qorvo)

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器件参数
参数名称
属性值
最大输入功率
10 dBm
端子数量
8
最小工作频率
500 MHz
最大工作频率
2500 MHz
最小工作温度
-40 Cel
最大工作温度
85 Cel
加工封装描述
ROHS COMPLIANT, MINIATURE, PLASTIC, MSOP-8
each_compli
Yes
欧盟RoHS规范
Yes
状态
Active
微波射频类型
WIDE BAND LOW POWER
阻抗特性
50 ohm
结构
COMPONENT
增益
7 dB
jesd_609_code
e3
包装材料
PLASTIC/EPOXY
ckage_equivalence_code
TSSOP8,.19
wer_supplies__v_
3/3.3
sub_category
RF/Microwave Amplifiers
最大供电电压
16 mA
工艺
GAAS
端子涂层
MATTE TIN
dditional_feature
LOW NOISE
文档预览
RF2442
HIGH-LINEARITY LOW NOISE AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: MSOP-8
Features
Low Noise and High Intercept
Point
External Bias Control
Single 2.5V to 5.0V Power
Supply
500MHz to 2500MHz Opera-
tion
Extremely Small MSOP-8
Package
VCC1 1
GND1 2
RF IN 3
GND2 4
8 VCC2
7 NC
6 RF OUT
5 NC
Applications
TDMA/CDMA/FM Cellular Rx
LNA
TDMA/CDMA PCS Rx LNA
Low Noise Transmit Driver
Amplifier
ISM Band LNA/Driver
General Purpose Amplifica-
tion
Commercial and Consumer
Systems
Functional Block Diagram
Product Description
The RF2442 is a low noise amplifier with a very high dynamic range
designed for the receive front end of digital cellular applications at
900MHz, 1900MHz, and 2400MHz. It is designed to amplify low level sig-
nals with minimum noise contribution while operating in the harsh, inter-
ference-rich environments of newly deployed digital subscriber units. The
device also functions as an outstanding PA driver amplifier in the transmit
chain of digital subscriber units where low transmit noise power is a con-
cern. The device supports trade-offs between linearity and current drain.
The designer has control of these trade-offs with the choice of an external
bias resistor. The IC is featured in a standard miniature 8-lead plastic
MSOP package.
Ordering Information
RF2442
RF2442 PCBA-L
RF2442 PCBA-M
RF2442 PCBA-H
High-Linearity Low Noise Amplifier
Fully Assembled Evaluation Board (~900MHz)
Fully Assembled Evaluation Board (~1900MHz)
Fully Assembled Evaluation Board (~2400MHz)
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev B8 DS080128
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 12
RF2442
Absolute Maximum Ratings
Parameter
Supply Voltage
Input RF Level
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +6.0
+10
-40 to +85
-40 to +150
Unit
V
DC
dBm
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Overall
RF Frequency Range
Min.
Specification
Typ.
500 to 2500
Max.
Unit
MHz
Condition
Requires input tuning inductor below 1GHz
Schematic Evaluation Board L (R
C
=0),
T=25°C, RF=881MHz
881MHz Performance
Gain
18
17
16
Output P1dB
Output IP3
+21
+16
+10
Noise Figure
20
19
18
+13
+11
+27
+22
+16
1.6
1.5
1.4
Reverse Isolation
22
22
21
24
24
23
2.5
2.5
2.5
22
21
20
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
V
CC
=3.6V
V
CC
=3.0V
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
Schematic Evaluation Board M (R
C
=0),
T=25°C, RF=1960MHz
1960MHz Performance
Gain
10
10
10
Output P1dB
Output IP3
+20
+15
+9
Noise Figure
12
12
12
+16
+13
+26
+21
+15
1.6
1.5
1.4
Reverse Isolation
18
20
2.3
2.1
2.0
14
14
14
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
V
CC
=3.6V
V
CC
=3.0V
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
V
CC
=3.6V
2 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev B8 DS080128
RF2442
Parameter
1960MHz Performance, cont.
17
17
19
19
dB
dB
V
CC
=3.0V
V
CC
=2.5V
Schematic Evaluation Board H (R
C
=0),
T=25°C, RF=2400MHz
7
7
6
Output IP3
+20
+15
+9
Noise Figure
9
9
8
+26
+21
+15
1.6
1.5
1.4
Reverse Isolation
16
16
16
17
17
17
2.5 to 5.0
17
10
7
19
12
9
30
23
20
2.5
2.3
2.1
11
11
10
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
V
mA
mA
mA
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
V
CC
=3.6V
V
CC
=3.0V
V
CC
=2.5V
T=25°C
Min.
Specification
Typ.
Max.
Unit
Condition
2400MHz Performance
Gain
Power Supply
Voltage
Current Consumption
Rev B8 DS080128
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 12
RF2442
Pin
1
Function
VCC1
Description
Supply voltage for the LNA. External RF and IF bypassing is required. The
trace length between the pin and the bypass capacitors should be mini-
mized. The ground side of the bypass capacitors should connect immedi-
ately to ground plane. This pin connects to pin 8 through a 150Ω resistor.
This allows for simple biasing of the collector at pin 6. Refer to Application
Schematics 1 and 3.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
RF input pin. This pin is internally DC-blocked and matched to 50Ω for fre-
quencies above 1GHz. When using below 1GHz, it is recommended that
this pin be matched with series inductance to series-resonate out the inter-
nal blocking capacitor. Refer to Application Schematics 1 and 2.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
No connection. This pin is typically left unconnected or grounded.
LNA Output pin. This pin is an open-collector output. It must be biased to
either V
CC
or pin 8 through a choke or matching inductor. This pin is typi-
cally matched to 50Ω with a shunt bias/matching inductor and series
blocking/matching capacitor. Refer to application schematics.
No connection. This pin is typically left unconnected or grounded.
Optional power supply connection for biasing pin 6. This pin connects to
pin 1 through a 150Ω resistor. This allows for simple biasing of the collec-
tor at pin 6. When used, this pin should be RF bypassed. Refer to Applica-
tion Schematics 1 and 3.
See pin 3.
Interface Schematic
150
Ω
VCC1
BIAS
VCC2
2
3
GND1
RF IN
To bias circuits
LNA OUT
LNA IN
4
5
6
GND2
NC
RF OUT
7
8
NC
VCC2
See pin 1.
Package Drawing
0.192
± 0.008
0.012
0.006
± 0.003
-A-
0.0256
0.118
± 0.004 sq
6° MAX
0° MIN
0.034
0.021
± 0.004
0.006
± 0.002
Shaded lead is pin 1.
4 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev B8 DS080128
RF2442
Evaluation Board Schematic (L board)
~900 MHz
C1
1 nF
VCC
C2
22 pF
1
L2
8.2 nH
C5
1.5 pF
2
3
4
2442401-
8
7
6
5
C4
1.5 pF
L1
15 nH
C3
22 pF
50
Ω μstrip
J2
RF OUT
R1
0
Ω
J1
RF IN
50
Ω μstrip
Evaluation Board Schematic (M board)
~1900 MHz
C1
1 nF
VCC
C2
22 pF
1
2
J1
RF IN
50
Ω μstrip
3
4
6
5
C4
1.0 pF
2442400B
8
7
L1
4.7 nH
C3
22 pF
50
Ω μstrip
J2
RF OUT
R1
0
Ω
Evaluation Board Schematic (H board)
~2400 MHz
C1
1 nF
VCC
C2
22 pF
1
2
J1
RF IN
50
Ω μstrip
3
4
6
5
C4
0.5 pF
2442402-
8
7
L1
3.9 nH
C3
22 pF
50
Ω μstrip
J2
RF OUT
R1
0
Ω
Rev B8 DS080128
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 12
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参数对比
与RF2442相近的元器件有:RF2442PCBA-L、RF2442PCBA-M、RF2442_1、RF2442PCBA-H。描述及对比如下:
型号 RF2442 RF2442PCBA-L RF2442PCBA-M RF2442_1 RF2442PCBA-H
描述 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
最大输入功率 10 dBm 10 dBm 10 dBm 10 dBm 10 dBm
端子数量 8 8 8 8 8
最小工作频率 500 MHz 500 MHz 500 MHz 500 MHz 500 MHz
最大工作频率 2500 MHz 2500 MHz 2500 MHz 2500 MHz 2500 MHz
最小工作温度 -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel
最大工作温度 85 Cel 85 Cel 85 Cel 85 Cel 85 Cel
加工封装描述 ROHS COMPLIANT, MINIATURE, PLASTIC, MSOP-8 ROHS COMPLIANT, MINIATURE, PLASTIC, MSOP-8 ROHS COMPLIANT, MINIATURE, PLASTIC, MSOP-8 ROHS COMPLIANT, MINIATURE, PLASTIC, MSOP-8 ROHS COMPLIANT, MINIATURE, PLASTIC, MSOP-8
each_compli Yes Yes Yes Yes Yes
欧盟RoHS规范 Yes Yes Yes Yes Yes
状态 Active Active Active Active Active
微波射频类型 WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER
阻抗特性 50 ohm 50 ohm 50 ohm 50 ohm 50 ohm
结构 COMPONENT COMPONENT COMPONENT COMPONENT COMPONENT
增益 7 dB 7 dB 7 dB 7 dB 7 dB
jesd_609_code e3 e3 e3 e3 e3
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
ckage_equivalence_code TSSOP8,.19 TSSOP8,.19 TSSOP8,.19 TSSOP8,.19 TSSOP8,.19
wer_supplies__v_ 3/3.3 3/3.3 3/3.3 3/3.3 3/3.3
sub_category RF/Microwave Amplifiers RF/Microwave Amplifiers RF/Microwave Amplifiers RF/Microwave Amplifiers RF/Microwave Amplifiers
最大供电电压 16 mA 16 mA 16 mA 16 mA 16 mA
工艺 GAAS GAAS GAAS GAAS GAAS
端子涂层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
dditional_feature LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
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