RF2705
0
Typical Applications
• EDGE/GSM (GSM850/900) Handsets
• EDGE/GSM (DCS/PCS) Handsets
• W-CDMA Handsets/Data Cards
Product Description
4.00
LOW NOISE, MULTI-MODE, QUAD-BAND,
QUADRATURE MODULATOR AND PA DRIVER
• W-CDMA/GSM/EDGE Multimode Handsets
and Data Cards
-A-
-B-
1.00
0.80
The RF2705 is a low noise, multi-mode, quad-band direct
I/Q to RF modulator and PA driver designed for handset
applications where multiple modes of operation are
required. Frequency doublers, dividers and LO buffers
are included to support a variety of LO generation
options. Dynamic power control is supported through a
single analog input giving 90dB of power control range for
the W-CDMA mode and 40dB of power control in the
other two modes. Three sets of RF outputs are provided:
high band and low band low noise EDGE/GMSK outputs,
as well as one wideband W-CDMA output. The device is
designed for 2.7V to 3.3V operation, and is assembled in
a plastic, 24-pin, 4mmx4mm QFN.
0.10 C
4.00
0.10 C
0.10 C
0.10 C
2.45
0.50 TYP
+0.10
-0.10
Shaded lead is pin 1.
Dimensions in mm.
-C-
SEATING
PLANE
Scale: None
0.10 C
0.08 C
2.45
+0.10
-0.10
0.05
0.00
0.30
TYP
0.18
0.10 M C A B
0.50
TYP
0.30
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
MODE B
Package Style: QFN, 24-Pin, 4x4
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Features
• W-CDMA High/Mid/Low Power Modes
• Quad-Band Direct Quadrature Modulator
• Variable Gain PA Drivers
MODE A
I SIG N
I SIG P
VCC1
24
VCC2 1
23
22
21
20
19
RF OUT
18
WB P
GND
Note: The die flag is the
chip's main ground.
• GMSK Bypass Amplifiers
• LO Frequency Doubler and Divider
• Baseband Filtering
LO HB P 2
17
RF OUT
WB N
RF OUT
HB P
RF OUT
HB N
RF OUT
LB P
RF OUT
LB N
LO HB N 3
DIV
2
+45°
-45°
16
Σ
LO LB P 4
Flo
x2
+45°
-45°
15
LO LB N 5
Mode Control
and Biasing
Power
Control
14
Ordering Information
Low Noise, Multi-Mode, Quad-Band, Quadrature
Modulator and PA Driver
RF2705PCBA-41XFully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
RF2705
MODE C 6
7
MODE D
8
Q SIG N
9
Q SIG P
10
VREF
11
GC DEC
12
GC
13
Functional Block Diagram
Rev A4 041026
5-113
RF2705
Absolute Maximum Ratings
Parameter
Supply Voltage
Storage Temperature
Operating Ambient Temperature
Input Voltage, any pin
Input Power, any pin
Rating
-0.5 to 3.6
-40 to +150
-40 to +85
-0.5 to +3.6
+5
Unit
V
°C
°C
V
dBm
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Min.
Typ.
Max.
Output Performance with Modulated Baseband Inputs
Low Band EDGE 8PSK Mode (GSM850/GSM900)
Parameter
Output Power
Maximum Output Power with
8PSK Modulated Signal*
Maximum VGC
Minimum VGC
Gain Range
0
+2.5
-39
42
Unit
Condition
Mode=Low Band F
LO
x1 (see Control Logic Truth Table for Mode Control Settings)
V
CC
=2.7V, T=+25°C
-37
dBm
dBm
dB
While meeting spectral mask
While meeting spectral mask
Difference between output power at
GC=2.0V and GC=0.2V.
Out-of-Band Emission
Spectrum Emission Mask*
Frequency Spacing
200kHz
250kHz
400kHz
600kHz to 1800kHz
1800kHz to 3000kHz
3000kHz to 6000kHz
>6000kHz
-36
-43
-67
-73
-73
-73
-75
2
-40
4
TBD
TBD
TBD
dBc
dBc
dBc
dBc
dBc
dBc
dBc
%
dB
%
Error Vector Magnitude
RMS*
Origin Offset*
Peak*
3
-34
9
30kHz BW
30kHz BW
30kHz BW
30kHz BW
100kHz BW
100kHz BW
100kHz BW
8PSK Modulation
Output Noise
At F
C
±20MHz*
Relative Noise at:
Maximum Gain
Absolute Noise at:
Maximum Gain
All Gain Settings
-156
-152
-156
-154
dBc/Hz
dBc/Hz
dBm
dBm
GC=2.0V, IQ=1.2V
P-P
8PSK
GC=2.0V to 1.4V
GC=2.0V, IQ=0V
P-P
IQ=1.2V
P-P
8PSK
General Conditions
Local Oscillator
LO LB Input Frequency
RF LB Output Frequency
Input Power
IQ Baseband Inputs
IQ Level
IQ Common Mode
Input Bandwidth
Baseband Filter Attenuation
* Not tested in Production
824
824
-6.0
915
915
+3.0
MHz
MHz
dBm
V
P-P
V
MHz
dB
8PSK
Input IQ signal driven differentially and in
quadrature.
0.0
1.2
1.2
1.0
0.7
20
At 20MHz offset
5-114
Rev A4 041026
RF2705
Specification
Min.
Typ.
Max.
Output Performance with Modulated Baseband Inputs
High Band EDGE 8PSK Mode (DCS1800/PCS1900)
Parameter
Output Power
Maximum Output Power with
8PSK Modulated Signal*
Maximum VGC
Minimum VGC
Gain Range
-1
+1.5
-40
42
dBm
dBm
dB
Unit
Condition
Mode=High Band F
LO
x1 (see Control Logic Truth Table for Mode Control Settings)
V
CC
=2.7V, T=+25°C
-38
While meeting spectral mask
While meeting spectral mask
Difference between output power at
GC=2.0V and GC=0.2V.
Out-of-Band Emission
Spectrum Emission Mask*
Frequency Spacing
200kHz
250kHz
400kHz
600kHz to 1800kHz
1800kHz to 3000kHz
3000kHz to 6000kHz
>6000kHz
-36
-43
-67
-73
-73
-73
-75
1.3
-37
3
TBD
TBD
TBD
dBc
dBc
dBc
dBc
dBc
dBc
dBc
%
dB
%
Error Vector Magnitude
RMS*
Origin Offset*
Peak*
3
-30
11
30kHz BW
30kHz BW
30kHz BW
30kHz BW
100kHz BW
100kHz BW
100kHz BW
8PSK Modulation
Output Noise
At F
C
±20MHz*
Relative Noise at:
Maximum Gain
Absolute Noise at:
Maximum Gain
All Gain Settings
-154
-150
-153
-151
dBc/Hz
dBc/Hz
dBm
dBm
GC=2.0V, IQ=1.2V
P-P
8PSK
GC=2.0V to 1.4V
GC=2.0V, IQ=0V
P-P
IQ=1.2V
P-P
8PSK
General Conditions
Local Oscillator
LO HB Input Frequency
RF HB Output Frequency
Input Power
IQ Baseband Inputs
IQ Level
IQ Common Mode
Input Bandwidth
Baseband Filter Attenuation
* Not tested in Production
1710
1710
-6.0
1910
1910
+3.0
MHz
MHz
dBm
V
P-P
V
MHz
dB
8PSK
Input IQ signal driven differentially and in
quadrature.
0.0
1.2
1.2
1.0
0.7
20
At 20MHz offset
Rev A4 041026
5-115
RF2705
Specification
Min.
Typ.
Max.
Output Performance with Modulated Baseband Inputs
W-CDMA Mode
Parameter
Output Power
Maximum Output Power with
W-CDMA Modulated Signal*
High Power Mode
Medium Power Mode
Unit
Condition
Mode=Wideband F
LO
x2 (see Control Logic Truth Table for Mode Control Settings)
V
CC
=2.7V, T=+25°C, while meeting 48dBc
ALCR
3
-4
6
-1
dBm
dBm
Gain Range
High Power Mode
90
dB
GC=2.0V
GC=1.5V
Difference between output power at
GC=2.0V and GC=0.2V.
Gain step when switching between power
modes in either direction.
GC=1.4V
GC=TBD
Gain Step
High Power to Medium Power
Medium Power to Low Power
±0.5
TBD
dB
dB
Out-of-Band Emission
Adjacent Channel Leakage
Power Ratio (ALCR)*
Channel Spacing
±5MHz
±10MHz
50
65
1.4
-152
-146
-146
dBc
dBc
%rms
dBc/Hz
dBc/Hz
3.84MHz relative to channel power
3.84MHz relative to channel power
3GPP W-CDMA
GC=2.0V
GC=2.0V to 1.5V
Error Vector Magnitude
RMS*
Output Noise
At F
C
±40MHz*
General Conditions
Local Oscillator
LO LB Input Frequency
RF WB Output Frequency
Input Power
IQ Baseband Inputs
IQ Level
IQ Common Mode
Input Bandwidth
Baseband Filter Attenuation
* Not tested in Production
960
1920
-10.0
990
1980
+3.0
MHz
MHz
dBm
3GPP W-CDMA
HQPSK, 1DPCCH+1DPDCH
Input IQ signal driven differentially and in
quadrature.
0.0
0.8
1.2
11
V
P-P
V
MHz
dB
8
10
At 40MHz offset
5-116
Rev A4 041026
RF2705
Specification
Min.
Typ.
Max.
Output Performance with CW Baseband Inputs
Wideband Mode
Parameter
VGA and PA Driver
Output Power W-CDMA Modu-
lated*
Output Power CW
Gain Control Voltage Range
Gain Control Range
Gain Control Slope
5
2
0.2
5
92
73
-48
-50
-50
-50
-42
-41
-38
-23
-55
-30
-30
-30
-30
-30
-30
-30
-10
-50
8
2.0
dBm
dBm
V
dB
dB/V
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
Unit
Condition
Mode=Wideband F
LO
x2 (see Control Logic Truth Table for Mode Control Settings)
V
CC
=2.7V, T=+25°C, LO=975MHz to
990MHz at -10dBm, IQ=540mV
P-P
** at
100kHz, unless otherwise noted
GC=2.0V, IQ=0.8V
P-P
at HQPSK
GC=2.0V
Difference between output power at
GC=2.0V and GC=0.2V
Calculated between GC=1.0V and 0.5V
GC=2.0V, No I/Q adjustment
GC=1.5V, No I/Q adjustment
GC=1.0V, No I/Q adjustment
GC=0.5V, No I/Q adjustment
GC=2.0V, No I/Q adjustment
GC=1.5V, No I/Q adjustment
GC=1.0V, No I/Q adjustment
GC=0.5V, No I/Q adjustment
GC=2.0V
Modulator
Sideband Suppression
*
*
*
Carrier Suppression
3rd Harmonic of Modulation
Suppression at F
C
-3x300kHz
Spurious Outputs
Spurious Output at Integer Multi-
ples of FLO LB*
FLO LB
4xFLO LB
6xFLO LB
GC=2.0V, I/Q=540mV
P-P
at 100kHz
-60.0
-14.0
-47.0
+11.5
+20
dBm
dBm
dBm
dBm
dBm
FLO LB leakage
Second harmonic of carrier
Third harmonic of carrier
I/Q=100kHz
GC=2.0V. Extrapolated from IM3 with two
baseband tones at 90kHz and 110kHz
applied differentially, in quadrature, at both I
and Q inputs, each tone 400mV
P-P
.
GC=2.0V
0
0
Output Compression
Output P1dB*
Intermodulation
Output IP3*
Intermodulation IM3 tone at
F
C
+70kHz and F
C
+130kHz
relative to tones at
F
C
+90kHz and F
C
+110kHz
-37
dBc
-40
dBc
* Not tested in Production
** Provides the same output power as modulated signal with associated crest factor.
GC=1.5V
Rev A4 041026
5-117
