TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Ultra Low Capacitance Diode Arrays
SESD Series Ultra Low Capacitance Diode Arrays
Description
RoHS
Pb
GREEN
ELV
Pinout
0402 DFN array
0802 DFN array
The SESD series Ultra Low Capacitance Diode Arrays
provides signal integrity-preserving unidirectional ESD
protection for the world’s most challenging high speed
serial interfaces. Compelling packaging options including
the standard 1004 DFN 2.5 mm x 1.0 mm layout, the
board space-friendly 0802 DFN and 1103 DFN minimize
trace layout complexity, and save significant PCB space.
The 0402 DFN provides the most flexibility for PCB
layout purposes. This series is rated in excess of 20kV
contact ESD protection (IEC 61000-4-2) while maintaining
extremely low leakage and dynamic resistance, and is
offered in the industry’s most progressive and popular
footprints. The SESD series sets higher standards for signal
integrity and usability.
Features
3
1
2
4
• 0.20pF TYP capacitance
• ESD, IEC 61000-4-2,
±20kV contact, ±20kV air
• AEC-Q101 qualified
• Moisture Sensitivity
Level(MSL-1)
• ELV Compliant
• RoHS Compliant and
Lead Free
• PPAP capable
3
1
G
2
• Low clamping voltage
of 9.2V @ I
PP
=2.0A
(t
P
=8/20μs)
G
1004 DFN array
1103 DFN array
1
2
3.G
4
5
3
2
1
• Low profile DFN array
packages
• Facilitates excellent
signal integrity
Applications
• USB 3.1, 3.0, 2.0
• HDMI 2.0, 1.4a, 1.3
• DisplayPort
(TM)
• V-by-One
®)
• Thunderbolt
10
9
8.G
7
6
Bottom View
4
5
6
• Tablet PC and external
storage with high speed
interfaces
• Applications requiring
high ESD performance in
small packages
• Automotive applications
Functional Block Diagram
1
2
4
5
1
2
• LVDS interfaces
• Consumer, mobile and
portable electronics
Additional Information
G, 3, 8
0802/1004 DFN array
1
2
3
4
5
6
3
0402 DFN array
Datasheet
Resources
Samples
G
1103 DFN array
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/09/19
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Ultra Low Capacitance Diode Arrays
Absolute Maximum Ratings
Symbol
I
PP
T
OP
T
STOR
Parameter
Peak Current (t
p
=8/20μs)
Operating Temperature
Storage Temperature
Value
2.0
-55 to 125
-55 to 150
Units
A
°C
°C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those
indicated in the operational sections of this specification is not implied.
Electrical Characteristics -
(T
OP
=25
°
C)
Parameter
Input Capacitance
Breakdown Voltage
Reverse Working Voltage
Reverse Leakage Current
Clamping Voltage
Peak Pulse Current
ESD Withstand Voltage
I
L
@ V
RWM
=5.0V
V
CL
@ I
PP
=2.0A
t
P
=8/20μs
IEC61000-4-2 (Contact)
IEC 61000-4-2 (Air)
±20
±20
25
9.20
2.0
Test Conditions
@ V
R
= 0V, f = 3GHz
V
BR
@ I
T
=1mA
Min
Typ
0.20
9.00
7
.0
50
Max
0.22
Units
pF
V
V
nA
V
A
kV
Insertion Loss Diagram
0
-5.0
Insertion Loss Diagram - 1103 DFN Array
0
-5.0
S21 Insertion Loss (dB)
-10.0
S21 Insertion Loss (dB)
1.E+07
1.E+08
1.E+09
1.E+10
-10.0
-15.0
-15.0
-20.0
-25.0
-20.0
-25.0
-30.0
1.E+06
-30.0
Frequency (Hz)
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
Frequency (Hz)
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/09/19
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Ultra Low Capacitance Diode Arrays
Component IV Curve
1.0
0.8
0.6
0.4
0.2
Current (mA)
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-2
-1
0
1
2
3
4
5
6
7
8
9
10
Voltage (V)
USB3.0 Eye Diagram
5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern
Without SESD Device
With SESD Device
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Temperature (t
L
)
Pb – Free assembly
150°C
200°C
T
P
Ramp-up
t
P
Critical Zone
T
L
to T
P
Temperature
60 – 180 secs
3°C/second max
217°C
60 – 150 seconds
260
+0/-5
°C
20 – 40 seconds
6°C/second max
8 minutes Max.
260°C
T
L
T
S(max)
Preheat
t
L
Ramp-dow
Ramp-down
Average ramp up rate (Liquidus) Temp (T
L
) to peak
3°C/second max
T
S(min)
t
S
Peak Temperature (T
P
)
Time within 5°C of actual peak Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
25
time to peak temperature
Time
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/09/19
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Ultra Low Capacitance Diode Arrays
Package Dimensions — 0402 DFN Array
Symbol
A
A1
A3
D
E
K
L1
L2
b
e1
e2
0.55
0.95
0.35
0.45
0.20
0.10
Millimeters
Min
0.33
0
Typ
0.38
-
0.13 ref.
0.60
1.00
0.40
0.50
0.25
0.15
0.35 BSC
0.65 BSC
0.65
1.05
0.45
0.55
0.30
0.20
0.022
0.037
0.014
0.018
0.008
0.004
Max
0.43
0.05
Min
0.013
0
Inches
Typ
0.015
-
0.005 ref.
0.024
0.039
0.016
0.020
0.010
0.006
0.014 BSC
0.026 BSC
0.026
0.041
0.018
0.022
0.012
0.008
Max
0.017
0.002
Symbol
A
B
C
D
D1
E
F
Millimeters
0.60
1.00
0.23
0.35
0.35
0.15
0.30
Inches
0.024
0.039
0.009
0.014
0.014
0.006
0.012
Pad Layout
Embossed Carrier Tape & Reel Specification — 0402 DFN Array
T
D0
Y
P2
P0
E1
Symbol
A0
B0
Millimeters
0.70+/-0.05
1.15+/-0.05
ø 1.55 + 0.05
ø 0.40 +/- 0.05
1.75+/-0.10
3.50+/-0.05
0.47+/-0.05
4.00+/-0.10
2.00+/-0.05
2.00+/-0.05
8.00 +/-0.10
0.20+/-0.05
D1
B0
F
W
D0
D1
E1
F
K0
Section Y - Y
A0
Y
P
1
User Feeding Direction
K0
P0
P1
P2
W
T
Pin 1 Location
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/09/19
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Ultra Low Capacitance Diode Arrays
Package Dimensions — 0802 DFN Array
Symbol
A
A1
A3
D
E
b
b1
L
L1
L2
e
e1
e2
N
0.50
1.90
0.15
0.25
0.25
0.35
Millimeters
Min
0.33
0
Typ
0.38
0.02
0.127 ref
0.60
2.00
0.20
0.30
0.30
0.40
0.05 BSC
0.40 BSC
0.45 BSC
0.25 BSC
4
0.70
2.10
0.25
0.36
0.36
0.45
0.020
0.075
0.006
0.010
0.010
0.014
Max
0.43
0.05
Min
0.013
0
Inches
Typ
0.015
--
0.005 ref.
0.024
0.079
0.008
0.012
0.012
0.016
0.002 BSC
0.016 BSC
0.018 BSC
0.010 BSC
4
0.028
0.083
0.010
0.014
0.014
0.018
Max
0.017
0.002
Symbol
A
B
C
D
E
F
F1
G
G1
Millimeters
0.60
2.00
0.30
0.30
0.25
0.10
0.15
0.40 BSC
0.45 BSC
Inches
0.024
0.079
0.012
0.012
0.010
0.004
0.006
0.016 BSC
0.018 BSC
Pad Layout
Embossed Carrier Tape & Reel Specification — 0802 DFN Array
T
D0
Y
P2
P0
E1
Symbol
A0
B0
Millimeters
0.81+/-0.05
2.21+/-0.05
ø 1.50+0.10/-0
ø 0.40 min
1.75+/-0.10
3.50+/-0.05
0.46+/-0.05
4.00+/-0.10
2.00+/-0.10
2.00+/-0.05
8.00+0.30/-0.10
0.25+/-0.20
D1
B0
F
W
D0
D1
E1
F
K0
Section Y - Y
A0
Y
P
1
User Feeding Direction
K0
P0
P1
P2
W
T
Pin 1 Location
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/09/19
