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RF3374

Wide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89, 3 PIN

器件类别:无线/射频/通信    射频和微波   

厂商名称:Qorvo

厂商官网:https://www.qorvo.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
TO-243
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
LOW NOISE, HIGH RELIABILITY
特性阻抗
50 Ω
构造
COMPONENT
增益
17 dB
最大输入功率 (CW)
13 dBm
JESD-609代码
e3
安装特点
SURFACE MOUNT
功能数量
1
端子数量
3
最大工作频率
6000 MHz
最小工作频率
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装等效代码
TO-243
电源
4.5 V
射频/微波设备类型
WIDE BAND LOW POWER
最大压摆率
80 mA
表面贴装
YES
技术
GAAS
端子面层
Matte Tin (Sn)
最大电压驻波比
2
Base Number Matches
1
文档预览
RF3374Gen-
eral Purpose
Amplifier
RF3374
GENERAL PURPOSE AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: SOT89
Features
DC to >6000MHz Operation
Internally Matched Input and
Output
20dB Small Signal Gain
+32dBm Output IP3
+18dBm Output Power
1
RF IN
GND
4
2
GND
3
RF OUT
GaAs pHEMT
Si CMOS
Si BJT
Applications
Basestation Applications
Broadband, Low-Noise Gain
Blocks
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Final PA for Low-Power Applica-
tions
High Reliability Applications
Functional Block Diagram
Product Description
The RF3374 is a general purpose, low-cost RF amplifier IC. The device is manufac-
tured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cascadable 50Ω gain block.
Applications include IF and RF amplification in wireless voice and data communica-
tion products operating in frequency bands up to 6000MHz. The device is self-con-
tained with 50Ω input and output impedances and requires only two external DC-
biasing elements to operate as specified.
Ordering Information
RF3374
RF3374PCBA-410
General Purpose Amplifier
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A8 DS050524
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 8
RF3374
Absolute Maximum Ratings
Parameter
Input RF Power
Operating Ambient Temperature
Storage Temperature
Rating
+13
-40 to +85
-60 to +150
Unit
dBm
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Overall
Frequency Range
3dB Bandwidth
Gain
Min.
Specification
Typ.
DC to >6000
3
Max.
Unit
MHz
GHz
dB
Freq=500MHz
Freq=1000MHz
Freq=2000MHz
Freq=3000MHz
Freq=4000MHz
Freq=6000MHz
dB
Freq=2000MHz
Condition
T=25 °C, I
CC
=65mA (See Note 1.)
18.7
18.5
17.0
20.5
20.2
18.9
17.6
16.2
13.5
21.0
22.0
dB
dB
dB
Noise Figure
Input VSWR
Output VSWR
Output IP
3
Output P
1dB
Reverse Isolation
+29.0
3.5
<1.5:1
<2:1
<1.6:1
<2:1
+32.0
+17.5
22.0
170
132
In a 50Ω system, 500MHz to 3500MHz
In a 50Ω system, 3500MHz to 5000MHz
In a 50Ω system, 500MHz to 3000MHz
In a 50Ω system, 3000MHz to 5000MHz
dBm
dBm
dB
°C/W
°C
Freq=2000MHz
Freq=2000MHz
Freq=2000MHz
I
CC
=65mA, P
DISS
=274mW. (See Note 3.)
V
PIN
=4.2V
T
CASE
=+85°C
T
CASE
=+85°C
With 22Ω bias resistor
At pin 8 with I
CC
=65mA at +25°C
At evaluation board connectors, I
CC
=65mA
See Note 2.
Thermal
Theta
JC
Maximum Measured Junction
Temperature at DC Bias Condi-
tions
Mean Time To Failure
3050
4.50
5.95
65
4.55
6.30
80
years
V
V
mA
Power Supply
Device Operating Voltage
Operating Current
Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are not
optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used.
Note 2: The RF3374 must be operated at or below 80mA in order to achieve the thermal performance listed above. While the RF3374 may be
operated at higher bias currents, 65mA is the recommended bias to ensure the highest possible reliability and electrical performance.
Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be
used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 80mA over all intended operating condi-
tions.
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A8 DS050524
RF3374
Pin
1
Function
RF IN
Description
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
tions. DC coupling of the input is not allowed, because this will override the
internal feedback loop and cause temperature instability.
Ground connection.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
CC
. The resistor is selected to set the DC
current into this pin to a desired level. The resistor value is determined by
the following equation:
Interface Schematic
2
3
GND
RF OUT
RF OUT
(
V
SUPPLY
V
DEVICE
)
R
=
------------------------------------------------------
-
I
CC
Because DC is present on this pin, a DC blocking capacitor, suitable for the
frequency of operation, should be used in most applications. The supply
side of the bias network should also be well bypassed. Care should also be
taken in the resistor selection to ensure that the current into the part never
exceeds 80mA over the planned operating temperature.
Ground connection.
RF IN
4
GND
Package Drawing
1.04
0.80
0.50
0.30
1.60
1.40
3.10
2.90
0.48
0.36
2 PL
4.60
4.40
2.60
2.40
1.80
1.45
1.75
1.40
Dimensions in mm.
Shaded lead is pin 1.
0.43
0.38
0.53
0.41
Rev A8 DS050524
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 8
RF3374
Application Schematic
V
CC
4
22
Ω
100 pF
+
1
μF
100 pF
RF IN
1
2
3
100 nH
RF OUT
100 pF
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1
1
2
3
CON3
VCC1
GND
4
R1
22
Ω
C1
100 pF
L1
100 nH
C2
100 pF
C3
100 pF
+ C4
1
μF
VCC
J1
RF IN
50
Ω μstrip
1
2
3
50
Ω μstrip
J2
RF OUT
337x410, r.1
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A8 DS050524
RF3374
Evaluation Board Layout
Board Size 1.195" x 1.000"
Board Thickness 0.033”, Board Material FR-4
Rev A8 DS050524
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 8
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参数对比
与RF3374相近的元器件有:。描述及对比如下:
型号 RF3374
描述 Wide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, SOT-89, 3 PIN
是否Rohs认证 符合
包装说明 TO-243
Reach Compliance Code compliant
ECCN代码 EAR99
其他特性 LOW NOISE, HIGH RELIABILITY
特性阻抗 50 Ω
构造 COMPONENT
增益 17 dB
最大输入功率 (CW) 13 dBm
JESD-609代码 e3
安装特点 SURFACE MOUNT
功能数量 1
端子数量 3
最大工作频率 6000 MHz
最高工作温度 85 °C
最低工作温度 -40 °C
封装主体材料 PLASTIC/EPOXY
封装等效代码 TO-243
电源 4.5 V
射频/微波设备类型 WIDE BAND LOW POWER
最大压摆率 80 mA
表面贴装 YES
技术 GAAS
端子面层 Matte Tin (Sn)
最大电压驻波比 2
Base Number Matches 1
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