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RF5608SR

RF Front End Circuit, CMOS, 5 X 5 MM, 0.90 MM HEIGHT, LEAD FREE, PACKAGE-32

器件类别:无线/射频/通信    电信电路   

厂商名称:Qorvo

厂商官网:https://www.qorvo.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Qorvo
包装说明
HVQCCN, LCC32,.2SQ,20
Reach Compliance Code
compliant
ECCN代码
5A991.G
JESD-30 代码
S-XQCC-N32
长度
5 mm
功能数量
1
端子数量
32
最高工作温度
70 °C
最低工作温度
封装主体材料
UNSPECIFIED
封装代码
HVQCCN
封装等效代码
LCC32,.2SQ,20
封装形状
SQUARE
封装形式
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
电源
3.3 V
认证状态
Not Qualified
座面最大高度
0.95 mm
最大压摆率
0.275 mA
标称供电电压
3.3 V
表面贴装
YES
技术
CMOS
电信集成电路类型
RF FRONT END CIRCUIT
温度等级
COMMERCIAL
端子形式
NO LEAD
端子节距
0.5 mm
端子位置
QUAD
宽度
5 mm
文档预览
RF5608
3.0V TO 3.6V, DUAL-BAND FRONT-END
MODULE
Package Style: 32-Pin, 5mmx5mmx0.9mm
32
SWTX 1
31
30
29
28
27
26
25
24 GND
Features
GND 2
PA5
TX5_IN
23 RX5
22 PAEN5
21 LNAEN5
20 LNAEN2
19 PAEN2
18 RX2
17 GND
16
TX2_IN
PDET5
GND
Single-Module Radio Front-End
Single Supply Voltage 3.0V to
3.6V
Integrated 2.5GHz & 5GHZ PA’s,
Diplexer LNA for both High and
Low Band, Filters & Switches for
TX & RX
P
OUT
=18dBm, 11g, OFDM, <3%
EVM and P
OUT
=16dBm, 11a,
OFDM, <4% EVM
ANT 3
Diplexer
LNA5
GND 4
SWRX 5
GND 6
LNA2
7
PA2
8
9
PDET2
10
GND
11
VCC
12
VCC
13
VCC
14
GND
15
GND
Applications
IEEE802.11a/b/g/n WiFi Appli-
cations
Single-Chip RF Front-End Module
2.5GHz and 5GHz ISM Bands
Applications
WiFi Systems
Portable Battery-Powered Equip-
ment
Functional Block Diagram
Product Description
The RF5608 is a single-chip dual-band integrated front-end module (FEM) for high-performance
WiFi applications in the 2.5GHz and 5GHz ISM bands. The RF5608 addresses the need for
aggressive size reduction for a typical 802.11a/b/g RF front-end design and greatly reduces the
number of components outside of the core chipset therefore minimizing the footprint and
assembly cost of the overall 802.11a/b/g solution. The FEM contains integrated power amplifi-
ers for 2.5GHz and 5GHz, TX/RX switch for each band, low noise amplifier for the 5.0GHz
receive band, matching components, bypass capacitors, built-in power detector for both bands,
and band pass filters for both transmit paths and some filtering for both receive paths. The
device is manufactured on lead frame with InGap HBT and pHEMT processes. The RF5608
module is a 5mmx5mmx0.9mm package with 32-pins and a backside ground. The RF5608
greatly minimizes next level board space and allows for simplified integration.
Ordering Information
RF5608SQ
RF5608SR
RF5608TR13
RF5608PCK-410
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel
Fully Assembled Evaluation Board with 5 Loose Sample
Pieces
Optimum Technology Matching® Applied
DS110619
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GND
VCC
VCC
VCC
VCC
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 15
RF5608
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
REG
)
DC Supply Current
Input RF Power
Operating Ambient Temperature
Reduced Performance Temps
Storage Temperature
Moisture Sensitivity
Rating
-0.3 to +5.4
-0.5 to +3.5
400
0
0 to +70
-30 to 0
+70 to +85
-40 to +150
JEDEC Level TBD
Unit
V
DC
V
mA
dBm
°C
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
2.4GHz Transmit
Compliance
Output Power 11g
Min.
2.4
Specification
Typ.
Max.
2.5
Unit
GHz
Condition
Nominal Conditions: T=+25°C,
V
CC
(b/g)=3.3V, PAEN_g=2.85V, Freq=2.4GHz
to 2.5GHz, unless otherwise noted.
IEEE802.11b, IEEE802.11g
FCC CFR 15.247, 0.205, 0.209
16.5
18
dBm
With a standard IEEE802.11g waveform,
OFDM, 54Mbps, 64 QAM, over temperature
range -30°C to +85°C, and V
CC
=3.0V to 3.6V
RMS, mean with a standard IEEE802.11g
waveform, OFDM, 54Mbps, 64 QAM at 11g
rated output power over temperature range
-30°C to +85°C and V
CC
=3.0V to 3.6V
EVM
P
OUT
=18dBm
P
OUT
=14dBm
Output Power 11b
20
3
2
21
4.5
2.5
%
%
dBm
With a standard IEEE802.11b waveform, over
temperature range -30°C to +85°C, and over
V
CC
=3.0V to 3.6V
At 11b rated output power with 1Mbps and
11Mbps 11b waveform over temperature
range -30°C to +85°C, and over V
CC
=3.0V to
3.6V
Adjacent Channel Power
ACP1
ACP2
Gain
Gain Variance
Power Detect
Voltage Range
Output Resistance
Output Capacitance
Power Detector Accuracy
Sensitivity
>14dBm
0<P
OUT
<14dBm
-1.5
0.8
0.2
25
-2.5
-38
-56
27
-30
-50
+2.5
dBc
dBc
dB
dB
Over Temperature range -10°C to +70°C and
over Frequency
At 20dBm
At 10dBm P
OUT
0.95
0.25
10
10
1.2
0.35
V
V
k
pF
+1.5
75
25
dB
mV/dB
mV/dB
Into 3:1 VSWR
2 of 15
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110619
RF5608
Parameter
2.4GHz Transmit, cont.
Current Operating
125
160
200
Quiescent
PAEN
Shutdown
Second Harmonic
Second
Third
Power Supply
PAEN Voltage
ON
OFF
Input Return Loss
Ruggedness Output VSWR
Stability Output VSWR
Turn-On/Off Time
10:1
4:1
0.5
1.0
2.0
3.0
0
-12
3.2
0.2
-9
V
V
dB
ratio
ratio
S
Output stable to within 90% of final gain, Note
1
IEEE802.11a
IEEE802.11j
FCC CFR 15.247, 0.205, 0.209
Nominal Conditions: T=+25°C, V
CC
=3.3V,
PAEN=3.0V, Freq range from 4.9GHz to
5.85GHz unless otherwise noted.
Band 1
Band 2
Band 3
Band 4
Band 1 P
OUT
4.9
5.10
5.35
5.65
11.5
13
5.1
5.35
5.65
5.825
GHz
GHz
GHz
GHz
dBm
RMS, mean with a standard IEEE802.11g
waveform, OFDM, 54Mbps, 64 QAM
V
CC
=3.3V
DC
, 0°C to +70°C over beta
No damage, conditions: max operating voltage,
max input power
TTL, 200mV less than V
CC
3.0
-49
-46
3.3
-45
-43
3.6
dBm
dBm
V
90
75
5
160
230
275
125
100
10
mA
mA
mA
mA
uA
uA
RF P
OUT
=14dBm, 54Mbps, IEEE802.11g
RF P
OUT
=18dBm, 11Mbps, IEEE802.11b
RF P
OUT
=20dBm, 11g or 11b
V
CC
=ON, PAEN=ON, RF=OFF
Over full temp range and V
REG
Voltage range
PAEN<0.2V
P
OUT
=20dBm, 1Mbps, 11b mode
4.90GHz to 5.00GHz
7.20GHz to 7.50GHz
Min.
Specification
Typ.
Max.
Unit
Condition
5.0GHz Transmit
Compliance
Frequency
EVM
Band 2 P
OUT
EVM
Band 3 P
OUT
EVM
Band 3 P
OUT
EVM
Band 4 P
OUT
EVM
Band 4 P
OUT
EVM
Band 4 P
OUT
EVM
2
11.5
2
11.5
2
14.5
3
11.5
2
14.5
3
16.5
4
3
13
2.5
13
2.5
16
4
13
2.5
16
4
18
7
%
dBm
%
dBm
%
dBm
%
dBm
%
dBm
%
dBm
%
DS110619
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 15
RF5608
Parameter
5.0GHz Transmit, cont.
Gain
Gain Variance
Power Detect
Voltage Range
Output Resistance
Output Capacitance
Power Detector Accuracy
Sensitivity
>10dBm
0<P
OUT
<10dBm
Current Operating
Quiescent
PAEN
Shutdown
V
CC
, Supply Voltage
PAEN Voltage
ON
OFF
Input Impedance
Max Input Power Operational
Rated Input Power Withstand
Ruggedness Output VSWR
Stability Output VSWR
Harmonics
Second Band 2
Second Band 3
Second Band 4
Third All Bands
Turn-On/Off Time
-36
-48
-48
-48
1.0
dBm
dBm
dBm
dBm
S
P
OUT
=13dBm in 1MHz RBW @ 6Mbps
P
OUT
=16dBm in 1MHz RBW @ 6Mbps
P
OUT
=18dBm in 1MHz RBW @ 6Mbps
Rated power in 1MHz RBW @ 6Mbps
Output stable to within 90% of final gain, Note
1
10:1
4:1
2.8
3.0
0
50
3.2
0.2
2:1
-5
0
V
V
dBm
dBm
ratio
ratio
No damage.
No damage, conditions: max operating voltage,
max input power
TTL, 200mV less than V
CC
3.0
TBD
85
3.3
3.6
20
10
180
100
10
mV/dB
mV/dB
mA
mA
mA
A
A
V
1V to 0.5V
0V to 0.5V
RF P
OUT
=18dBm, 54Mbps, 11a
RF P
OUT
=13dBm, 54Mbps, 11a
V
CC
=ON, PAEN=ON, RF=OFF
PAEN<0.2V
-1
0.8
0.4
0.9
0.5
TBD
TBD
+1
1.0
0.6
V
V
k
pF
dB
At 3.0:1 VSWR at all Phases, power and all
conditions
At 18dBm P
OUT
At 10dBm P
OUT
26
-2
28
+2
dB
dB
Min.
Specification
Typ.
Max.
Unit
Condition
4 of 15
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110619
RF5608
Parameter
2.4GHz Receive
Compliance
IEEE802.11a
IEEE802.11j
FCC CFR 15.247, 0.205, 0.209
2.4
2
-10
60
2.8
10
-1.5
3
-4
-1
12
12
-2
0
16
8
21
16
-19
-17
33
25
38
16
-43
-41
41
TBD
0
mA
20
-39
dBm
dBm
mA
SWRX=1, LNA2EN=0, SWTX=1
dB
dB
2-tone, P
IN
=-15dBm,
f=1MHz
20
-15
20
+2
dB
dBm
dBm
mA
SWRX=0, LNA2EN=1, SWTX=1
dB
2-tone, P
IN
=-13dBm,
f=1MHz
Across frequency
mA
SWRX=1, LNA2EN=1, SWTX=1
3
12
2.5
6
-9
100
3.2
14
+1.5
3.2
GHz
A
dB
uA
V
dB
dB
dB
dBm
2-tone, P
IN
=-20dBm,
f=1MHz
Over frequency range, full temperature range,
and voltage
Across frequency
TLL, 200mV less than V
CC
SWRX=1, LNA2EN=1, SWTX=0
SW=High
Min.
Specification
Typ.
Max.
Unit
Condition
Frequency
Switch Leakage
Output Impedance 50
Low Band LNA Enable Current
Enable Voltage
High Gain Mode
RX Gain
RX Gain Variation
Noise Figure
Input P1dB**
Input IIP3
Current Consumption
Low Gain Mode 1
RX Gain
Noise Figure
Input P1dB
IIP3
Current Consumption
Low Gain Mode 2
RX Gain
Noise Figure
Input P1dB
IIP3
Current Consumption
Low Gain Mode 3
RX Gain
Noise Figure
IIP3
Current Consumption
DS110619
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 15
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参数对比
与RF5608SR相近的元器件有:RF5608。描述及对比如下:
型号 RF5608SR RF5608
描述 RF Front End Circuit, CMOS, 5 X 5 MM, 0.90 MM HEIGHT, LEAD FREE, PACKAGE-32 RF Front End Circuit, CMOS, 5 X 5 MM, 0.90 MM HEIGHT, LEAD FREE, PACKAGE-32
是否Rohs认证 符合 符合
厂商名称 Qorvo Qorvo
包装说明 HVQCCN, LCC32,.2SQ,20 HVQCCN, LCC32,.2SQ,20
Reach Compliance Code compliant compliant
ECCN代码 5A991.G 5A991.G
JESD-30 代码 S-XQCC-N32 S-XQCC-N32
长度 5 mm 5 mm
功能数量 1 1
端子数量 32 32
最高工作温度 70 °C 70 °C
封装主体材料 UNSPECIFIED UNSPECIFIED
封装代码 HVQCCN HVQCCN
封装等效代码 LCC32,.2SQ,20 LCC32,.2SQ,20
封装形状 SQUARE SQUARE
封装形式 CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
电源 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified
座面最大高度 0.95 mm 0.95 mm
最大压摆率 0.275 mA 0.275 mA
标称供电电压 3.3 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
电信集成电路类型 RF FRONT END CIRCUIT RF FRONT END CIRCUIT
温度等级 COMMERCIAL COMMERCIAL
端子形式 NO LEAD NO LEAD
端子节距 0.5 mm 0.5 mm
端子位置 QUAD QUAD
宽度 5 mm 5 mm
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