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RF6100-1

Narrow Band Low Power Amplifier, 824MHz Min, 849MHz Max, 1 Func, GAAS, 4 X 4 MM, ROHS COMPLIANT PACKAGE-10

器件类别:无线/射频/通信    射频和微波   

厂商名称:Qorvo

厂商官网:https://www.qorvo.com

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
SOLCC10,.16,32
Reach Compliance Code
compliant
ECCN代码
5A991.G
特性阻抗
50 Ω
构造
COMPONENT
增益
24 dB
最大输入功率 (CW)
10 dBm
安装特点
SURFACE MOUNT
功能数量
1
端子数量
10
最大工作频率
849 MHz
最小工作频率
824 MHz
最高工作温度
110 °C
最低工作温度
-30 °C
封装主体材料
PLASTIC/EPOXY
封装等效代码
SOLCC10,.16,32
电源
3.4 V
射频/微波设备类型
NARROW BAND LOW POWER
最大压摆率
530 mA
表面贴装
YES
技术
GAAS
最大电压驻波比
2
Base Number Matches
1
文档预览
RF6100-13V
900MHz Lin-
ear Power
Amplifier Mod-
ule
RF6100-1
3V 900MHZ LINEAR POWER
AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product
Package Style: Module (4 mm x 4 mm)
Features
Input/Output Internally
Matched@50Ω
28dBm Linear Output Power
40% Peak Linear Efficiency
-50dBc ACPR @ 885kHz
29dB Linear Gain
53% AMPS Efficiency
VREG 1
VMODE 2
GND 3
RF IN 4
VCC1 5
Bias
10 GND
9 GND
8 RF OUT
7 GND
6 VCC2
Applications
3V CDMA/AMPS Cellular
Handset
3V CDMA20001/X Cellular
Handset
Spread-Spectrum System
Functional Block Diagram
Product Description
The RF6100-1 is a high-power, high-efficiency linear amplifier module specifically
designed for 3V handheld systems. The device is manufactured on an advanced
third generation GaAs HBT process, and was designed for use as the final RF ampli-
fier in 3V IS-95/CDMA 2000 1X/AMPS handheld digital cellular equipment, spread-
spectrum systems, and other applications in the 824MHz to 849MHz band. The
RF6100-1 has a digital control line for low power applications to lower quiescent
current. The device is self-contained with 50Ω input and output that is matched to
obtain optimum power, efficiency and linearity. The module is a 4mmx4mm land
grid array with backside ground. The RF6100-1 is footprint compatible with industry
standard 4mmx4mm CDMA modules, and requires only one decoupling capacitor.
Ordering Information
RF6100-1
3V 900MHz Linear Power Amplifier Module
RF6100-1PCBA-41X Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS050929
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 8
RF6100-1
Absolute Maximum Ratings
Parameter
Supply Voltage (RF off)
Supply Voltage (P
OUT
≤31dBm)
Control Voltage (V
REG
)
Input RF Power
Mode Voltage (V
MODE
)
Operating Temperature
Storage Temperature
Rating
+8.0
+5.2
+4.2
+10
+3.5
-30 to +110
-40 to +150
Unit
V
V
V
dBm
V
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
High Power Mode
(V
MODE
Low)
Operating Frequency Range
Linear Gain
Second Harmonics
Third Harmonics
Maximum Linear Output
Linear Efficiency
Maximum I
CC
ACPR @ 885kHz
ACPR @ 1.98MHz
Input VSWR
Stability in Band
Stability out of Band
Noise Power
Min.
Specification
Typ.
Max.
Unit
Condition
T=25
o
C Ambient, V
CC
=3.4V, V
REG
=2.8V,
V
MODE
=0V, and P
OUT
=28dBm for all parame-
ters (unless otherwise specified).
824
27
29
-35
-40
28
35
40
465
-50
-58
2:1
849
MHz
dB
dBc
dBc
%
530
-46
-55
6:1
10:1
mA
dBc
dBc
No oscillation>-70dBc
No damage
dBm/Hz
At 45MHz offset.
T=25
o
C Ambient, V
CC
=3.4V, V
REG
=2.8V,
V
MODE
=2.8V, and P
OUT
=18dBm for all param-
eters (unless otherwise specified).
-133
Low Power Mode
(V
MODE
High)
Operating Frequency Range
Linear Gain
Second Harmonics
Third Harmonics
Maximum Linear Output
Maximum I
CC
ACPR @885kHz
ACPR @1.98MHz
Input VSWR
Output VSWR Stability
18
135
-50
-60
2:1
6:1
10:1
-46
-56
mA
dBc
dBc
824
24
26
-35
-40
849
MHz
dB
dBc
dBc
P
OUT
=16dBm
No oscillation>-70dBc
No damage
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS050929
RF6100-1
Parameter
FM Mode
Operating Frequency Range
AMPS Maximum Output Power
AMPS Efficiency
AMPS Gain
AMPS Second Harmonics
AMPS Third Harmonics
47
24
824
31
53
28
-35
-40
3.2
3.4
65
55
4.7
250
-30
-30
4.2
100
70
5.5
1000
6
40
0.2
0
2.75
2.7
0
2.0
2.8
5.0
0.5
2.95
3.0
0.5
2.8
dBc
dBc
V
mA
mA
mA
uA
uS
uS
uA
V
V
V
V
V
High Gain Mode
Low Gain Mode
V
MODE
=low and V
REG
=2.8V
V
MODE
=high and V
REG
=2.8V
V
MODE
=high
849
MHz
dBm
%
Min.
Specification
Typ.
Max.
Unit
Condition
T=25
o
C Ambient, V
CC
=3.4V, V
REG
=2.8V,
V
MODE
=0V, and P
OUT
=31dBm for all parame-
ters (unless otherwise specified).
Power Supply
Supply Voltage
High Gain Idle Current
Low Gain Idle Current
V
REG
Current
V
MODE
Current
RF Turn On/Off Time
DC Turn On/Off Time
Total Current (Power Down)
V
REG
Low Voltage
V
REG
High Voltage
(Recommended)
V
REG
High Voltage
(Operational)
V
MODE
Voltage
Rev A1 DS050929
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 8
RF6100-1
Pin
1
2
3
4
5
6
7
8
9
10
Pkg
Base
Function
VREG
VMODE
GND
RF IN
VCC1
VCC2
GND
RF OUT
GND
GND
GND
Description
Regulated voltage supply for amplifier bias. In Power Down mode, both
V
REG
and V
MODE
need to be LOW (<0.5V).
For nominal operation (High Power Mode), V
MODE
is set LOW. When set
HIGH, devices are biased lower to improve efficiency.
Ground connection. Connect to package base ground. For best perfor-
mance, keep traces physically short and connect immediately to ground
plane.
RF input internally matched to 50Ω. This input is internally AC-coupled.
First stage collector supply. A low frequency decoupling capacitor
(e.g., 4.7μF) may be required.
Output stage collector supply. A low frequency decoupling capacitor (e.g.,
4.7μF) is required.
Ground connection. Connect to package base ground. For best perfor-
mance, keep traces physically short and connect immediately to ground
plane.
RF output internally matched to 50Ω. This output is internally
AC-coupled.
Ground connection. Connect to package base ground. For best perfor-
mance, keep traces physically short and connect immediately to ground
plane.
Ground connection. Connect to package base ground. For best perfor-
mance, keep traces physically short and connect immediately to ground
plane.
Ground connection. The backside of the package should be soldered to a
top side ground pad which is connected to the ground plane with multiple
vias. The pad should have a short thermal path to the ground plane.
Interface Schematic
Package Drawing
1
4.00
± 0.10
1.40
1.25
4.00
± 0.10
0.450
± 0.075
0.500 TYP
0.600 TYP
2.975
R0.20 TYP
1
3.900 TYP
2.425
2.200
1.800
1.525
1.350
0.950
0.500 TYP
0.100 TYP
0.000
3.549
3.500
3.050
2.650
2.400
TYP
2.200
1.800
1.650
1.350
0.950
0.725
0.125
0.000
0.775
1.000 TYP
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3.200
3.500 TYP
3.900 TYP
3.000 TYP
Rev A1 DS050929
RF6100-1
Evaluation Board Schematic
VREG
C3
4.7
μF
VMODE
C4
4.7
μF
J1
RF IN
VCC1
C2
4.7
μF
50
Ω μstrip
1
2
3
4
5
P1
1
P1-2
2
3
P1-4
4
P2
1
2
P2-3
3
4
P2-5
Bias
10
9
8
7
6
C1
22
μF
VCC2
50
Ω μstrip
J2
RF OUT
GND
VCC1
GND
VCC2
GND
GND
VRE
G
GND
GND
5
CON5
VMODE
5
CON5
Rev A1 DS050929
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 8
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