RF7169
DUAL-BAND GSM850/PCS1900
TRANSMIT MODULE
Package Style: Module 6.63mmx5.24mmx1.0mm
GND
GND
GND
RX0
GND 1
22
21
20
19
18
17
Features
8kV Robust ESD Protection at
Antenna Port
Enhanced Performance
Transmit Module
No External Routing
High Efficiency at rated P
OUT
V
BATT
=3.5V
GSM850 42%
PCS1900 38%
Low RX Insertion Loss
Symmetrical RX Ports
0dBm to 6dBm Drive Level,
>50dB of Dynamic Range
Integrated Power Flattening
Circuit
V
BATT
Tracking Circuit
RFIN HB
2
RX1
NC
16
Amplifier
Switch
ESD
Protection
NC
GND 3
15 ANTENNA
RFIN LB
4
14 NC
13 GND
GND 5
CMOS Controller
GND 6
7
VRAMP
8
TX ENABLE
9
GPCTRL0
10
GPCTRL1
11
VBATT
12
GND
Functional Block Diagram
Product Description
The RF7169 is a dual band (GSM850/PCS1900) GSM/GPRS Class 12 compliant transmit mod-
ule with two symmetrical receive ports. This transmit module builds upon RFMD’s leading
power amplifier with PowerStar® integrated power control technology, pHEMT switch technol-
ogy, and integrated transmit filtering for best-in-class harmonic performance. The results are
high performance, reduced solution size, and ease of implementation. The device is designed
for use as the final portion of the transmitter section in a GSM850/PCS1900 handset and elim-
inates the need for a PA-to-antenna switch module matching network. The device provides 50Ω
matched input and output ports requiring no external matching components.
The RF7169 features RFMD’s latest integrated power-flattening circuit, which significantly
reduces current and power variation into load mismatch. Additionally, a V
BATT
tracking feature is
incorporated to maintain switching performance as supply voltage decreases. The RF7169 also
integrates an ESD filter to provide excellent ESD protection at the antenna port. The RF7169 is
designed to provide maximum efficiency at rated P
OUT
.
Applications
3V Dual-Band GSM/GPRS
Handsets
GSM850/PCS1900 Products
GPRS Class 12 Compliant
Portable Battery-Powered
Equipment
RF7169
RF7169SB
RF7169PCBA-41X
Dual-Band GSM850/PCS1900 Transmit Module
Transmit Module 5-Piece Sample Pack
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100120
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 16
RF7169
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
RAMP
)
Input RF Power
Max Duty Cycle
Output Load VSWR
Operating Case Temperature
Storage Temperature
Rating
-0.3 to +6.0
-0.3 to +1.8
+10
50
20:1
-20 to +85
-55 to +150
Unit
V
V
dBm
%
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
ESD
ESD RF Ports
ESD Antenna Port
ESD Any Other Port
Min.
Specification
Typ.
Max.
1000
1000
8
2000
1000
Unit
V
V
KV
V
V
V
V
pF
μA
dB
MHz
Condition
HBM, JESD22-A114
CDM, JEDEC JESD22-C101
IEC 61000-4-2
HBM, JESD22-A114
CDM, JEDEC JESD22-C101
Max. P
OUT
Min. P
OUT
DC to 200kHz
V
RAMP
=V
RAMP MAX
V
RAMP
=0.25V to V
RAMP MAX
Overall Power Control V
RAMP
Power Control “ON”
Power Control “OFF”
V
RAMP
Input Capacitance
V
RAMP
Input Current
Power Control Range
V
RAMP
P
OUT
BW
2.0
3.0
50
2.5
3.5
1
4.8
20
0.25
15
20
10
1.8
Overall Power Supply
Power Supply Voltage
Power Supply Current
V
μA
Operating Limits
P
IN
<-30dBm, TX Enable=Low,
V
RAMP
=0.25V, Temp=-20°C to +85°C,
V
BATT
=4.8V
Overall Control Signals
GpCtrl0, GpCtrl1 “Low”
GpCtrl0, GpCtrl1 “High”
GpCtrl0, GpCtrl1 “High Current”
TX Enable “Low”
TX Enable “High”
TX Enable “High Current”
RF Port Input and Output Imped-
ance
0
1.25
0
1.25
0
2.0
1
0
2.0
1
50
0.5
3.0
2
0.5
3.0
2
V
V
uA
V
V
uA
Ω
TX ENABLE
0
0
0
1
1
GpCtrl1
0
1
1
1
1
GpCtrl0
0
0
1
0
1
TX Module Mode
Low Power Mode (Stand-by)
RX 0
RX 1
GSM850 TX Mode
PCS1900 TX Mode
2 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100120
RF7169
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal conditions unless otherwise stated.
All unused ports are terminated.
V
BATT
=3.5V, P
IN
=3dBm, Temp=+25°C,
TX Enable=High, V
RAMP
=1.8V
TX Mode: GpCtrl1=High, GpCtrl0=Low,
Duty Cycle=25%, Pulse Width=1154μs
824
0
33
30.5
3
33.7
849
6
2.5:1
dBm
dBm
MHz
dBm
Full P
OUT
guaranteed at minimum drive level.
Over P
OUT
range (5dBm to 33dBm)
Duty Cycle=25%, Pulse Width=1154μs
V
BATT
=3.0V to 4.8V, P
IN
=0dBm to 6dBm,
Temp=-20°C to +85°C, Duty Cycle=50%,
Pulse Width=2308μs, V
RAMP
≤1.8V
The measured delivered output power to the
load with the mismatch loss already taken into
account with 1dB variation margin.
V
BATT
=3.7V.
Set V
RAMP
=V
RAMP
rated for P
OUT
=33dBm
V
RAMP
=V
RAMP
rated for P
OUT
=33dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP
rated for P
OUT
=33dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP
rated for P
OUT
=33dBm
V
RAMP
=V
RAMP
rated for P
OUT
=33dBm, also
over all power levels (5dBm to 33dBm)
TX Enable=Low, P
IN
=6dBm, V
RAMP
=0.25V
TX Enable=High, P
IN
=6dBm, V
RAMP
=0.25V
V
RAMP
=V
RAMP
rated for P
OUT
=33dBm,
RBW=100kHz
VSWR=12:1; all phase angles
(Set V
RAMP
=V
RAMP
rated for P
OUT
<33dBm into
50Ω load; load switched to VSWR=12:1)
VSWR=20:1; all phase angles
(Set V
RAMP
=V
RAMP
rated for P
OUT
=33dBm into
50Ω load; load switched to VSWR=20:1)
GSM850 Band
Operating Frequency Range
Input Power
Input VSWR
Maximum Output Power
Minimum Power Into 3:1 VSWR
30
dBm
Efficiency
2nd Harmonic
36
42
-40*
-33
%
dBm
3rd Harmonic
-40*
-33
dBm
All other harmonics up to
12.75GHz
Non-Harmonic Spurious up to
12.75GHz
Forward Isolation 1
Forward Isolation 2
Output Noise Power
869MHz to 894MHz
1930MHz to 1990MHz
Output Load VSWR Stability (Spuri-
ous Emissions)
Output Load VSWR Ruggedness
No damage or permanent
degradation to device
-88
-118
-56
-28
-33
-36
-41
-15
-82
-74
-36
dBm
dBm
dBm
dBm
dBm
dBm
dBm
DS100120
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 16
RF7169
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal conditions unless otherwise stated.
All unused ports are terminated.
V
BATT
=3.5V, P
IN
=3dBm, Temp=+25°C,
TX Enable=High, V
RAMP
=1.8V
TX Mode: GpCtrl1=High, GpCtrl0=High,
Duty Cycle=25%, Pulse Width=1154μs
1850
0
30.0
28
3
31.5
1910
6
2.5:1
dBm
dBm
MHz
dBm
Full P
OUT
guaranteed at minimum drive level.
Over P
OUT
range (0dBm to 30dBm)
Duty Cycle=25%, Pulse Width=1154μs
V
BATT
=3.0V to 4.8V, P
IN
=0dBm to 6dBm,
Temp=-20°C to +85°C, Duty Cycle=50%,
Pulse Width=2308μs, V
RAMP
≤1.8V
The measured delivered output power to the
load with the mismatch loss already taken into
account with 1dB variation
margin.V
BATT
=3.7V.
Set V
RAMP
=V
RAMP
rated for P
OUT
=30dBm
V
RAMP
=V
RAMP
rated for P
OUT
=30dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP
rated for P
OUT
=30dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP
rated for P
OUT
=30dBm
V
RAMP
=V
RAMP
rated for P
OUT
=30dBm, also
over all power levels (0dBm to 30dBm)
TX Enable=Low, P
IN
=6dBm, V
RAMP
=0.25V
TX Enable=High, P
IN
=6dBm, V
RAMP
=0.25V
V
RAMP
=V
RAMP
rated for P
OUT
=30dBm,
RBW=100kHz
VSWR=12:1; all phase angles
(Set V
RAMP
=V
RAMP
rated for P
OUT
<30dBm into
50Ω load; load switched to VSWR=12:1)
VSWR=20:1; all phase angles
(Set V
RAMP
=V
RAMP
rated for P
OUT
=30dBm into
50Ω load; load switched to VSWR=20:1)
PCS1900 Band
Operating Frequency Range
Input Power
Input VSWR
Maximum Output Power
Minimum Power Into 3:1 VSWR
27
dBm
Efficiency
2nd Harmonic
32
38
-39*
-33
%
dBm
3rd Harmonic
-40*
-33
dBm
All other harmonics up to
12.75GHz
Non-Harmonic Spurious up to
12.75GHz
Forward Isolation 1
Forward Isolation 2
Output Noise Power
869MHz to 894MHz
1930MHz to 1990MHz
Output Load VSWR Stability (Spuri-
ous Emissions)
Output Load VSWR Ruggedness
No damage or permanent
degradation to device
-103
-84
-55
-25
-33
-36
-53
-15
-82
-74
-36
dBm
dBm
dBm
dBm
dBm
dBm
dBm
4 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100120
RF7169
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal conditions unless otherwise stated.
V
BATT
=3.5V, P
IN
=3dBm, Temp=+25°C,
TX Enable=Low, V
RAMP
=1.8V
RX0 mode: GpCtrl1=High, GpCtrl0=Low
RX1 mode: GpCtrl1=High, GpCtrl0=High, RXO
Freq=869MHz to 894MHz,
RX1 Freq=1930MHz to 1990MHz
1.1
0.2
1.5:1
1.3
0.2
1.8:1
1.6
dB
dB
1.3
dB
dB
RXO Freq=869MHz to 894MHz. See Note 1.
RXO Freq=869MHz to 894MHz
RXO Freq=869MHz to 894MHz
Freq=1930MHz to 1990MHz. See Note 1.
Freq=1930MHz to 1990MHz
Freq=1930MHz to 1990MHz
RX Section
Insertion Loss GSM850
ANT-RX0/ RX1
In-Band Ripple GSM850
ANT-RX0/RX1
Input VSWR GSM850
ANT-RX0/RX1
Insertion Loss PCS1900
ANT-RX0/RX1
In-Band Ripple PCS1900
ANT-RX0/RX1
Input VSWR PCS1900
ANT-RX0/RX1
TX Section
Switch Leakage P
OUT
at RX Port
GSM850 ANT-RX0/RX1
1
8
dBm
GSM850 TX mode: Freq=824MHz to 849MHz,
GpCtrl1=High, GpCtrl0=Low, V
RAMP
=V
RAMP
rated for P
OUT
=33dBm at antenna port. See
Note 2.
PCS1900 TX mode: Freq=1850MHz to
1910MHz, GpCtrl1=High, GpCtrl0=High,
V
RAMP
=V
RAMP
rated for P
OUT
=30dBm at
antenna port. See Note 2.
Switch Leakage P
OUT
at RX Port
PCS1900 ANT-RX0/RX1
5
6
dBm
Note 1: The insertion loss values listed are measured into 50Ω wihtout matching. Improved performance can be obtained by properly matching
the antenna/receiver ports..
Note 2: Isolation specification set to ensure at least the following isolation at rated power:
Calculation Example using typical values: P
OUT
at Antenna-P
OUT
at RX Port. Isolation LB=33-2=31dB, HB=30-4=26dB.
DS100120
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 16
GD32 MCU
