RF9801
DUAL-BAND EGSM900/DCS1800/GSM/
GPRS/LINEAR EDGE TRANSMIT MODULE
Package Style: Module 6.63mmx5.24mmx1.0mm
GND
GND
GND
RX0
GND 1
22
21
20
19
18
17
Features
RFIN HB
2
RX1
NC
Dual Mode Operation
Proven PowerStar
®
Architecture
Integrated Power Flattening
Circuit
Integrated V
RAMP
Filter
Digital Bias Control
Edge Low Current Mode
No External Routing
Symmetrical RX Ports
High Gain Supports Low Drive
Level
Pin Compatibility with RF716X
Family
Robust 8kV ESD Protection at
Antenna Port
Integrated V
BATT
Tracking
Circuit
EGSM900/DCS1800 Prod-
ucts
3V Dual-Band GSM/GPRS/
EDGE Handsets
Mobile GPRS/EDGE Data
Products
Portable Battery-Powered
Equipment
GPRS Class 12 Compliant
16
Power Amplifier
Switch
ESD
Protection
NC
GND 3
15 ANTENNA
RFIN LB
4
14 GND
13 GND
GND 5
CMOS Controller
GND 6
7
VRAMP
8
TX ENABLE
9
GPCTRL0
10
GPCTRL1
11
VBATT
12
NC
Functional Block Diagram
Product Description
The RF9801 is a dual band (EGSM900/DCS1800) GSM/GPRS/Linear Edge, Class
12 compliant Transmit Module with two symmetrical receive ports. This transmit
module builds upon RFMD’s successful RF716X family incorporating full EDGE
capability while maintaining a common footprint for ease of phone platform design.
The RF9801 continues to build upon RFMD’s leading patented PowerStar® Archi-
tecture to include such features as Power Flattening Circuit, V
RAMP
Filtering, V
BATT
Tracking, and EDGE Low Power Mode. The module includes a multi-function CMOS
controller, GaAs HBT power amplifier, and pHEMT front end antenna switch. The
amplifier devices are manufactured on RFMD’s Advance Gallium Arsenide Hetero-
junction Bipolar Transistor (GaAs HBT) Process, which is designed to operate either
in saturated mode for GMSK or linear mode for EDGE 8PSK signaling. The highly
integrated transmit module simplifies the phone design by eliminating the need for
complicated control loop design, output RF spectrum, (ORFS) optimization, har-
monic filtering, and component matching, all of which combine to provide best in
class RF performance, solution size, and ease of implementation for cellular phone
systems. The RF ports are 50 matched and the antenna port includes ESD pro-
tection circuitry which meets the stringent 8kV industry standards requiring no
additional components. All of these eliminated factors help to improve the cus-
tomer’s product time to market.
Applications
GaAs HBT
GaAs MESFET
InGaP HBT
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100428
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 22
RF9801
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
RAMP
)
Input RF Power
Max Duty Cycle
Output Load VSWR
Operating Case Temperature
Storage Temperature
Rating
-0.3 to +6.0
-0.3 to +1.8
+10
50
20:1
-20 to +85
-55 to +150
Unit
V
V
dBm
%
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
ESD
ESD RF Ports
ESD Antenna Port
ESD Any Other Port
Min.
Specification
Typ.
Max.
1000
1000
8
1000
1000
Unit
V
V
KV
V
V
V
V
pF
A
dB
Condition
HBM, JESD22-A114
CDM, JEDEC JESD22-C101
IEC 61000-4-2
HBM, JESD22-A114
CDM, JEDEC JESD22-C101
Max. P
OUT
Min. P
OUT
DC to 200kHz
V
RAMP
=V
RAMP MAX
V
RAMP
=0.25V to V
RAMP MAX
Operating Limits
P
IN
<-30dBm, TX Enable=Low,
V
RAMP
=0.25V, Temp=-20°C to +85°C,
V
BATT
=4.2V
Overall Power Control V
RAMP
Power Control “ON”
Power Control “OFF”
V
RAMP
Input Capacitance
V
RAMP
Input Current
Power Control Range
50
3.2
3.6
1
4.2
20
0.25
15
20
10
1.8
Overall Power Supply
Power Supply Voltage
Power Supply Current
V
A
Overall Control Signals
GpCtrl0, GpCtrl1 “Low”
GpCtrl0, GpCtrl1 “High”
GpCtrl0, GpCtrl1 “High Current”
TX Enable “Low”
TX Enable “High”
TX Enable “High Current”
RF Port Input and Output Imped-
ance
0
1.25
0
1.25
0
2.0
1
0
2.0
1
50
0.5
3.0
2
0.5
3.0
2
V
V
uA
V
V
uA
Table 1: Module Control + Antenna Switch Logic
TX_EN
0
0
0
1
1
1
1
GpCtrl1
0
1
1
1
1
0
0
GpCtrl0
0
0
1
0
1
0
1
Control Mode
Standby
RX 0
RX 1
TX EGSM900 GMSK
TX DCS1800 GMSK
TX EGSM900 8PSK
TX DCS1800 8PSK
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DS100428
RF9801
Parameter
EGSM900 Band
GMSK Mode
Operating Frequency Range
Input Power
Input VSWR
Maximum Output Power
33.0
31
880
-2
+1
2:1
33.7
915
+4
3:1
dBm
dBm
MHz
dBm
Full P
OUT
guaranteed at minimum drive level.
Over P
OUT
range (5dBm to 33dBm)
Duty Cycle=25%, Pulse Width=1154s
V
BATT
=3.2V to 4.2V, P
IN
=-2dBm to +4dBm,
Temp=-20°C to +85°C, Duty Cycle=50%,
Pulse Width=2308s, V
RAMP
1.8V
Minimum power delivered to the load over
360° phase sweep.
Set V
RAMP
=V
RAMP
rated for P
OUT
=33dBm
V
RAMP
=V
RAMP
rated for P
OUT
=33dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP
rated for P
OUT
=33dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP
rated for P
OUT
=33dBm
V
RAMP
=V
RAMP
rated for P
OUT
=33dBm, also
over all power levels (5dBm to 33dBm)
TX Enable=Low, P
IN
=4dBm, V
RAMP
=0.25V
TX Enable=High, P
IN
=4dBm, V
RAMP
=0.25V
P
OUT
=33dBm, RBW=100kHz
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal Conditions used unless otherwise
stated.
V
BATT
=3.6V, P
IN
=1dBm, Temp=+25°C, Duty
Cycle=25%. All unused ports=50. Refer to
logic table for mode of operation.
Minimum Power Into 3:1 VSWR
Power Added Efficiency
2nd Harmonic
30.0
36
41
-40*
-33
dBm
%
dBm
3rd Harmonic
-40*
-33
dBm
All other harmonics up to
12.75GHz
Non-Harmonic Spurious up to
12.75GHz
Forward Isolation 1
Forward Isolation 2
Output Noise Power
925MHz to 935MHz
935MHz to 960MHz
1805MHz to 1880MHz
Output Load VSWR Stability
(Spurious Emissions)
Output Load VSWR Ruggedness
No damage or permanent
degradation to device
-87
-89
-115
-54
-28
-33
-36
-41
-15
-77
-83
-87
-36
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
VSWR=12:1; all phase angles
P
OUT
<33dBm into 50 load; load switched to
VSWR=12:1
VSWR=20:1; all phase angles
P
OUT
=33dBm into 50 load; load switched to
VSWR=20:1
DS100428
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 22
RF9801
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal Conditions used unless otherwise
stated.
V
BATT
=3.6V, Temp=+25°C, Duty Cycle=25%,
Pin adjusted for required P
OUT
.
All unused ports =50. Refer to logic table for
mode of operation.
880
27.5
26.0
15.0
Gain: High Power Mode
Gain: Low Power Mode
Current: High Power Mode
Current: Low Power Mode
Efficiency: High Power Mode
ACPR (400kHz): High Power Mode
BW=30kHz
12
30.5
33.5
31.5
900
300
18
-60
-60
-57
-56
1300
35.5
915
MHz
dBm
dBm
dBm
dB
dB
mA
mA
%
dBc
dBc
Meets ACPR and EVM. Nominal Conditions.
Meets ACPR and EVM. Extreme Conditions:
V
BATT
=3.2V to 4.2V, Temp=-20°C to +85°C.
Meets ACPR and EVM. Extreme Conditions;
Low Power Mode.V
RAMP
=0V
P
OUT
=27.5dBm, V
RAMP
=1.8V
P
OUT
=5dBm, V
RAMP
=0V
P
OUT
=27.5dBm, V
RAMP
=1.8V
P
OUT
=5dBm, V
RAMP
=0V
P
OUT
=27.5dBm, V
RAMP
=1.8V
P
OUT
=5dBm to 27.5dBm, V
RAMP
=1.8V
P
OUT
=5dBm to 26.0dBm, V
RAMP
=1.8V
V
BATT
=3.2V to 4.2V
Temp=-20°C to +85°C
P
OUT
=5dBm to 27.5dBm, V
RAMP
=1.8V
P
OUT
: 5dBm to 26.0dBm, V
RAMP
=1.8V
V
BATT
=3.2V to 4.2V
Temp=-20°C to +85°C
P
OUT
=27.5dBm, RBW=100kHz
EGSM900 Band
8PSK Mode
Operating Frequency Range
Max Linear Output Power
EVM (RMS): High Power Mode
1
4
5
%
%
Output Noise Power
925MHz to 935MHz
935MHz to 960MHz
1805MHz to 1880MHz
Output Load VSWR Stability
(Spurious Emissions)
-86
-86
-115
-77
-83
-87
-36
dBm
dBm
dBm
dBm
VSWR=12:1; all phase angles
P
OUT
<27.5dBm into 50 load; Load switched
to VSWR=12:1
4 of 22
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100428
RF9801
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Nominal Conditions used unless otherwise
stated.
V
BATT
=3.6V, P
IN
=1dBm, Temp=+25°C, Duty
Cycle=25%, Pin adjusted for required P
OUT
. All
unused ports=50. Refer to logic table for
mode of operation.
1710
-2
30.0
28
+1
2:1
31.0
1785
+4
2.5:1
dBm
dBm
MHz
dBm
Full P
OUT
guaranteed at minimum drive level.
Over P
OUT
range (0dBm to 30dBm)
Duty Cycle=25%, Pulse Width=1154s
V
BATT
=3.2V to 4.2V, P
IN
=-2dBm to +4dBm,
Temp=-20°C to +85°C, Duty Cycle=50%,
Pulse Width=2308s, V
RAMP
1.8V
The measured delivered output power to the
load with the mismatch loss already taken into
account with 1dB variation margin.
Set V
RAMP
=V
RAMP
rated for P
OUT
=30dBm
V
RAMP
=V
RAMP
rated for P
OUT
=30dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP
rated for P
OUT
=30dBm. *Typical
value measured from worst case harmonic fre-
quency across the band.
V
RAMP
=V
RAMP
rated for P
OUT
=30dBm
V
RAMP
=V
RAMP
rated for P
OUT
=30dBm, also
over all power levels (0dBm to 30dBm)
TX Enable=Low, P
IN
=4dBm, V
RAMP
=0.25V
TX Enable=High, P
IN
=4dBm, V
RAMP
=0.25V
P
OUT
=30dBm, RBW=100kHz
DCS1800 Band
GMSK Mode
Operating Frequency Range
Input Power
Input VSWR
Maximum Output Power
Minimum Power Into 3:1 VSWR
27.0
dBm
Power Added Efficiency
2nd Harmonic
32
36
-40*
-33
%
dBm
3rd Harmonic
-40*
-33
dBm
All other harmonics up to
12.75GHz
Non-Harmonic Spurious up to
12.75GHz
Forward Isolation 1
Forward Isolation 2
Output Noise Power
925MHz to 935MHz
935MHz to 960MHz
1805MHz to 1880MHz
Output Load VSWR Stability
(Spurious Emissions)
Output Load VSWR Ruggedness
No damage or permanent
degradation to device
-98
-98
-92
-70
-30
-33
-36
-53
-15
-77
-83
-79
-36
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
VSWR=12:1; all phase angles
P
OUT
<30dBm into 50 load; Load switched to
VSWR=12:1
VSWR=12:1; all phase angles
P
OUT
<30dBm into 50 load; Load switched to
VSWR=12:1
DS100428
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 22
电源技术
