Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
,
T
C
= 150
o
C
MIN
60
2
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 48V, I
D
= 16A,
R
L
= 3Ω, I
G(REF)
= 0.8mA
(Figures 18, 19)
-
-
-
-
-
-
-
TO-251 and TO-252
-
TYP
-
-
-
-
-
-
-
14
30
55
30
-
-
-
-
900
325
100
-
-
MAX
-
4
1
25
±100
0.047
65
-
-
-
-
125
80
45
2.2
-
-
-
2.083
100
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
V
GS
=
±20V
I
D
= 16A, V
GS
= 10V (Figure 9)
V
DD
= 30V, I
D
≈
8A, R
L
= 3.75Ω,
V
GS
= 10V, R
G
= 25Ω
(Figures 13, 16, 17)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
2. Pulse test: pulse width
≤
300ms, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
SYMBOL
V
SD
t
rr
I
SD
= 16A
I
SD
= 16A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
5-2
RFD16N06, RFD16N06SM
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
I
D
, DRAIN CURRENT (A)
20
16
12
8
4
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
Z
θ
JC
, NORMALIZED
THERMAL IMPEDANCE
0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10
-5
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
T
J
= MAX RATED
I
DM
, PEAK CURRENT (A)
300
200
V
GS
= 20V
V
GS
= 10V
100
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
100µs
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
C
= 25
o
C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10
-5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
10ms
100ms
DC
100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
5-3
RFD16N06, RFD16N06SM
Typical Performance Curves
100
I
AS
, AVALANCHE CURRENT (A)
Idm
STARTING T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
40
(Continued)
50
V
GS
= 20V
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
30
V
GS
= 6V
20
PULSE DURATION = 250µs, T
C
= 25
o
C
10
V
GS
= 5V
V
GS
= 4.5V
0
10
STARTING T
J
= 150
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3 RATED BV
DSS
- V
DD
) +1]
1
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
0
1
2
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
NOTE:
Refer to Harris Application Notes AN9321 and AN9322.
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
50
2.5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
-55
o
C
175
o
C
40
V
DD
= 15V
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 250µs, V
GS
= 10V, I
D
= 16A
2.0
25
o
C
30
1.5
20
1.0
10
0.5
0
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
2.0
V
GS
= V
DS
, I
D
= 250µA
1.5
NORMALIZED GATE
THRESHOLD VOLTAGE
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
1.5
1.0
1.0
0.5
0.5
0
-80
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
5-4
RFD16N06, RFD16N06SM
Typical Performance Curves
1600
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
C
ISS
800
C
OSS
400
C
RSS
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
(Continued)
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DD
= BV
DSS
45
V
DD
= BV
DSS
7.5
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
1200
30
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 3.75Ω
I
G(REF)
= 0.8mA
V
GS
= 10V
0
5.0
15
2.5
0
I
G
(
REF
)
-
20
---------------------
I
G
(
AC T
)
t, TIME (µs)
I
G
(
REF
)
-
80
---------------------
I
G
(
AC T
)
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
