Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
180
200
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA, (Figure 8)
V
DS
= 0.8 x Rated
BV
DSS
T
C
= 25
o
C
T
C
= 125
o
C
2
-
-
-
-
-
-
400
-
-
-
-
V
GS
= 0V, V
DS
= 25V, f = 1MHz,
(Figure 9)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
20
25
30
-
-
-
-
-
-
4
1
25
±100
3.65
8.3
3.65
-
25
30
40
50
200
60
25
15
V
V
V
µA
µA
nA
V
V
Ω
S
ns
ns
ns
ns
pF
pF
pF
o
C/W
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFL1N18
RFL1N20
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-Voltage (Note 2)
I
GSS
V
DS(ON)
V
GS
=
±20V,
V
DS
= 0V
I
D
= 1A, V
GS
= 10V
I
D
= 2A, V
GS
= 10V
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θJC
I
D
= 1A, V
GS
= 10V, (Figures 6, 7)
I
D
= 1A, V
DS
= 10V, (Figure 10)
I
D
≈
1A, V
DD
= 100V R
GS
= 50Ω,
V
GS
= 10V, (Figures 11, 12, 13)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTE:
2. Pulse test: pulse width
≤
300µs maximum, duty cycle
≤
2%.
SYMBOL
V
SD
t
rr
I
SD
= 1A
I
SD
= 2A, dI
SD
/dt = 50A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
200
MAX
1.4
-
UNITS
V
ns
5-2
RFL1N18, RFL1N20
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
125
150
0.8
0.6
0.4
0.2
0
Unless Otherwise Specified
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10.00
T
C
= 25
o
C
T
J
= MAX RATED
I
D
, DRAIN CURRENT (A)
3.0
250µs PULSE TEST
DUTY CYCLE
≤
20%
T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
1.0
V
GS
= 5V
0.5
V
GS
= 4V
0
2.5
2.0
1.5
I
D
, DRAIN CURRENT (A)
1.00
0.10
OPERATION IN THIS
AREA LIMITED BY r
DS(ON)
RFL1N18
RFL1N20
0.01
1
10
100
1000
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
6
7
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
3.0
V
DS
= 15V
250µs PULSE TEST
DUTY CYCLE
≤
2%
T
C
= -40
o
C
T
C
= 125
o
C
T
C
= 25
o
C
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
6
5
4
T
C
= 25
o
C
3
2
1
0
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
12
0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
, DRAIN CURRENT (A)
T
C
= -40
o
C
V
GS
= 10V
250µs PULSE TEST
DUTY CYCLE
≤
2%
T
C
= 125
o
C
2.5
I
D
, DRAIN CURRENT (A)
2.0
1.5
1.0
0.5
0
T
C
= 125
o
C
T
C
= -40
o
C
FIGURE 5. TRANSFER CHARACTERSTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
5-3
RFL1N18, RFL1N20
Typical Performance Curves
2.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
V
GS
= 10V, I
D
= 1A
Unless Otherwise Specified
(Continued)
1.4
V
GS
= V
DS
, I
D
= 250µA
1.5
NORMALIZED GATE
THRESHOLD VOLTAGE
0
50
100
150
1.2
1.0
1.0
0.5
0.8
0
-50
0.6
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
0
50
100
T
J
, JUNCTION TEMPERATURE (
o
C)
150
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE
vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD vs JUNCTION
TEMPERATURE
220
180
C, CAPACITANCE (pF)
140
100
60
20
f = 1MHz
g
fs
, TRANSCONDUCTANCE (S)
1000
900
800
700
600
500
400
300
200
100
0
60
0
0.5
1
1.5
I
D
, DRAIN CURRENT (A)
2
2.5
V
DS
= 15V
250µs PULSE TEST
DUTY CYCLE
≤
2%
T
C
= -40
o
C
C
ISS
T
C
= 25
o
C
T
C
= 125
o
C
C
OSS
C
RSS
0
10
20
30
40
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. TRANSCONDUCTANCE vs DRAIN CURRENT
200
BV
DSS
V
DD
= V
DSS
10
V
DD
= V
DSS
GATE
TO
SOURCE
VOLTAGE
0.75V
DSS
0.50V
DSS
0.25V
DSS
8
V
GS
, VOLTS (V)
150
V
DS
, VOLTS (V)
6
100
4
50
R
L
= 100Ω
I
G(REF)
= 0.09mA
V
GS
= 10V
DRAIN TO SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
t, TIME (µs)
I
G(REF)
I
G(ACT)
2
0
20
0
80
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
嵌入式系统
