RFMD2014
Direct Quadra-
ture Modula-
tor 1450MHz
to 2700MHz
RFMD2014
DIRECT QUADRATURE MODULATOR
1450MHz TO 2700MHz
Package: QFN, 24-Pin, 4mm x 4mm
VCC1
GND
20
GND
IN
24
NC
1
2
3
-45°
+45°
23
22
21
IP
19
18
VCC2
Features
GND
17 GND
16 RFOUT
15 NC
14
GND
13 NC
12
GND
ACPR Performance: -70dBc Typ.
for 1-Carrier WCDMA
Very High Linearity: +26dBm
OIP3
Very Low Noise Floor:
-160dBm/Hz
High Output Power: +11dBm
P1dB
Typical Carrier Feed-Through:
<-40dBm
Single-Ended or Differential LO
Drive
Typical Sideband Suppression:
<-40dBc
Single +5V Supply
Small 24-Pin, 4mmx4mm, QFN
GND
LOP
LON
GND
NC
`
4
5
6
7
NC
8
GND
9
QN
10
QP
11
GND
Functional Block Diagram
Product Description
The RFMD2014 is direct quadrature modulator for use in cellular base
stations and other communications systems. RFMD2014 supports cellu-
lar, 3G, WiMax, and LTE air interface standards. This device features oper-
ation from 1450MHz to 2700MHz with excellent carrier and sideband
suppression and ultra low noise floor. The device is manufactured in an
advanced GaAs HBT process. The RFMD2014 operates from a single 5V
supply and is packaged in a low cost, 4mm x 4mm, 24-pin leadless pack-
age.
Applications
Cellular, 3G Infrastructure
WiBro, WiMax, LTE
WiFI or WLL Systems
GMSK, QPSK, DQPSK, QAM
Modulation
Optimum Technology Matching® Applied
DS111121
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2011, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 10
RFMD2014
Absolute Maximum Ratings
Parameter
Supply Voltage
LO Input
Operating Temperature
Storage Temperature
Maximum Junction Temperature
Power Dissipation
BB CM Voltage
Thermal Resistance
ESD
Rating
5.5
+10
-40 to +85
-65 to +150
+150
1200
1.8
28
Class 1 C (1000V)
Unit
V
dBm
°C
°C
°C
mW
V
°C/W
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
General
Supply Voltage
Supply Current
Min.
4.75
189
1450
Specification
Typ.
5
210
Max.
5.25
231
2700
Unit
V
mA
MHz
dBm
dB
dBm
dB
Uncalibrated
Uncalibrated
Condition
RF Output
RF Frequency Range
Carrier Feed through
Sideband Suppression
OIP3
RF Port Return Loss
P
OUT
ACP
Broadband Noise Floor
Output Power Flatness
P1dB
9
1450
-3
0
15
DC
600
1.5
300
-3
23
-40
-40
26
15
0
-70
-160
0.25
11
2700
3
3
Baseband input 800mV
PP
, 20kHz
Baseband input 800mV
PP,
CW quadrature
RF output -10dBm, 1 carrier WCDMA
20MHz offset, BB OV
PP
Over 60MHz BW
dBm
dBc
dBm/Hz
dB
dBm
MHz
dBm
dB
MHz
V
LO Input
LO Frequency Range
LO Input Power
Return Loss
BB Input
I/Q Input Frequency Range
BB Input Impedance
Common Mode Voltage
Differential impedance
Note: Typical performance at nominal conditions unless otherwise noted: VCC=+5V, Temperature=+25°C, Baseband CM Voltage=+1.5V, LO
Frequency=2100MHz, LO Power=0dBm, Single-Ended
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS111121
RFMD2014
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Function
NC
GND
LOP
LON
GND
NC
NC
GND
QN
QP
GND
GND
NC
GND
NC
RFOUT
GND
VCC2
GND
GND
IP
IN
GND
VCC1
Description
No connection.
RF/DC Ground connection.
Local oscillator differential input.
Local oscillator differential input. Connect to ground when using LOP input in single ended mode.
RF/DC Ground connection.
No connection.
No connection.
RF/DC Ground connection.
Q channel differential baseband input.
Q channel differential baseband input.
RF/DC Ground connection.
RF/DC Ground connection.
No connection.
RF/DC Ground connection.
No connection.
RF single-ended output.
RF/DC Ground connection.
5V supply.
RF/DC Ground connection.
RF/DC Ground connection.
I channel differential baseband input.
I channel differential baseband input.
RF/DC Ground connection.
5V supply.
DS111121
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
3 of 10
RFMD2014
Output IP3 vs LO Frequency
VCC 5V, LO 0dBm, IQ Drive 0.4VppSE, IQ Bias 1.5V
30
2
1.5
CW Output Power vs LO Frequency
VCC 5V, LO 0dBm, IQ Drive 0.4VppSE, IQ Bias 1.5V
25
1
0.5
Output
IP3
(dBm)
20
Output
0
Power
(dBm)
‐0.5
‐1
OIP3 +25C
15
‐1.5
‐2
‐2.5
‐3
‐3.5
CW Output Power +25C
CW Output Power ‐40C
CW Output Power +85C
10
OIP3 ‐40C
OIP3 +85C
5
0
1400
1600
1800
2000
2200
2400
2600
2800
‐4
1400
1600
1800
2000
2200
2400
2600
2800
LO Freq (MHz)
LO Freq (MHz)
Carrier Feedthru vs LO Frequency
VCC 5V, LO 0dBm, IQ Drive 0.4VppSE, IQ Bias 1.5V
‐10
‐15
‐20
‐25
LO
‐30
Feedthru
(dBm)
‐35
‐40
‐45
‐50
‐55
‐60
‐65
1400
1600
1800
2000
LO Freq (MHz)
2200
2400
2600
2800
Carrier Feedthrough +25C
Carrier Feedthrough ‐40C
Carrier Feedthrough +85C
Sideband Suppression vs LO Frequency
VCC 5V, LO 0dBm, IQ Drive 0.4VppSE, IQ Bias 1.5V
‐10
‐15
‐20
‐25
‐30
Suppression
(dBc)
‐35
‐40
‐45
‐50
‐55
‐60
‐65
1400
1600
1800
2000
2200
2400
2600
2800
Sideband Suppression +25C
Sideband Suppression ‐40C
Sideband Suppression +85C
LO Freq (MHz)
WCDMA Channel Power / Adjacent Chan Pwr / Alt Chan Pwr
VCC 5V, LO 0dBm, IQ Drive 0.4VppSE, IQ Bias 1.5V
‐55
‐10
0
RF Port Return Loss
VCC 5V, LO 0dBm
‐60
‐11
)
m
B
d
(
r
e
w
o
P
l
e
n
n
a
h
C
‐5
ACP
and
‐65
ALT1
(dBc)
ACP
WCDMA Channel Power
‐12
‐10
Return
Loss (dB)
‐15
‐70
‐13
‐75
‐14
‐20
RF Port +25C
RF Port ‐40C
RF Port +85C
‐80
1400
1600
1800
2000
2200
2400
2600
‐15
2800
‐25
1.4
1.6
1.8
2
Freq (GHz)
2.2
2.4
2.6
2.8
LO Freq (MHz)
4 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS111121
RFMD2014
LO Port Return Loss
VCC 5V, LO 0dBm
0
4
‐5
3
‐10
2
‐15
Return
Loss (dB)
‐20
CW Gain Compression vs Output Power
VCC 5V, LO 2100MHz 0dBm, IQ Bias 1.5V
1
Gain (dB)
0
‐25
‐1
Gain Compression +25C
Gain Compression ‐40C
‐30
LO Port +25C
LO Port ‐40C
LO Port +85C
‐2
Gain Compression +85C
‐3
‐10
‐5
0
Output Power (dBm)
5
10
15
1.8
2
2.2
Freq (MHz)
2.4
2.6
2.8
‐35
1.4
1.6
Carrier Feedthrough vs IQ Drive
VCC 5V, LO 2100MHz 0dBm, IQ Bias 1.5V
‐10
‐15
‐20
‐25
LO
Feedthru
‐30
(dBm)
‐35
‐40
‐45
‐50
‐55
‐60
0
0.5
1
1.5
IQ Drive (Vpp SE)
2
2.5
3
Carrier Feedthrough +25C
Carrier Feedthrough ‐40C
Sideband Suppression vs IQ Drive
VCC 5V, LO 2100MHz 0dBm, IQ Bias 1.5V
‐10
‐15
‐20
Sideband Suppression +25C
Sideband Suppression ‐40C
Sideband Suppression +85C
Carrier Feedthrough +85C
‐25
Suppression
(dBc)
‐30
‐35
‐40
‐45
‐50
‐55
‐60
0
0.5
1
1.5
IQ Drive (Vpp SE)
2
2.5
3
WCDMA Adjacent Chan Pwr vs Channel Power
VCC 5V, LO 2100MHz 0dBm, IQ Bias 1.5V
‐30
‐35
‐40
‐45
‐50
ACP (dBc)
‐55
‐60
‐65
‐70
‐75
‐80
‐20
‐15
‐10
‐5
Channel Power (dBm)
0
5
10
‐150
Output
Noise
(dBm/Hz)
‐155
‐145
‐140
Output Noise Floor vs Channel Power
VCC 5V, LO 2140MHz 0dBm, IQ Bias 1.5V, WCDMA
ACP +25C
ACP ‐40C
ACP +85C
‐160
Noise Floor +25C
Noise Floor ‐40C
Noise Floor +85C
‐165
‐20
‐15
‐10
‐5
Channel Power (dBm)
0
5
10
DS111121
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
5 of 10
