RFS P5032
5 GHz 802.11a
WLAN Power Amplifier
PRELIMINARY DATA SHEET - Rev 1.4
FEATURES
•
•
•
•
•
•
•
•
•
3.5% EVM @ P
OUT
= +19 dBm with IEEE
802.11a 64 QAM OFDM at 54 Mbps
24.5 dB of Linear Power Gain at 5 GHz
Single +3.3 V Supply
3 mm x 3 mm x 0.9 mm LPCC
< 1 dB Gain Variation From 4.9 - 5.9 GHz
25 dBm P1dB
170 mA @ P
OUT
= +19 dBm
RoHS Compliant
MSL 1 Rating
APPLICATIONS
•
•
802.11a WLAN
5 GHz Wireless Video Distribution
S32 Package
12 Pin 3 mm x 3 mm x 0.9 mm
LPCC
The RFS P5032 is manufactured using advanced
InGaP HBT technology that offers state-of-the-art
reliability, temperature stability and ruggedness. The
IC is RoHS (Restrictions on Hazardous Substances)
compliant, and is provided in a 3 mm x 3 mm x 0.9 mm
LPCC package optimized for a 50
Ω
system.
PRODUCT DESCRIPTION
The ANADIGICS RFS P5032 power amplifier is a
high performance InGaP HBT power amplifier IC
designed for transmit applications in the 4.9-5.9
GHz bands. The PA exhibits unparalleled linearity
and efficiency for IEEE 802.11a WLAN systems
under the toughest signal configurations within
these standards. The PA is biased by a single +3.3 V
supply and consumes ultra-low current in the OFF
mode.
VCC1
VCC2
12
11
10
GND
1
VCC
Bias Control
9
RF OUT
RF IN
2
Matching
Network
Matching
Network
8
RF OUT
GND
3
Bias Control
7
RF OUT
4
VPC 1
5
GND
6
VPC 2
Figure 1: Block Diagram and Pinout
04/2006
RFS P5032
Table 1: Pin Description
PIN
1
N AME
GND
D ESC R IPTION
Ground. C onnect di rectly to PC B ground pattern under IC usi ng the shortest possi ble
path.
RF Input. RF i nput to power ampli fi er matched to 50
V
. Route as coplanar wavegui de
usi ng adjacent ground pi ns. RF i nput can be opti mally i mpedance matched wi th shunt
capaci tor. Appli cati on ci rcui t shows stub capaci tor.
Ground. C onnect di rectly to PC B ground pattern under IC usi ng the shortest possi ble
path.
Power C ontrol. Power ampli fi er bi as control pi n for stage 1. The recommended use i s for
on/off control of the PA. Nomi nally, 0 V appli ed wi ll turn ampli fi er completely off; +3.3 V
should be used to set ampli fi er to maxi mum output capabi li ty. At maxi mum output power
capabi li ty, thi s pi n wi ll draw approxi mately 1 to 2 mA of current. A seri es resi stor i s used
to set the current flow i nto the pi n, thereby controlli ng the overall bi as level of the PA.
Ground. C onnect di rectly to PC B ground pattern under IC usi ng the shortest possi ble
path.
Power C ontrol. Power ampli fi er bi as control pi n for stage 2. The recommended use i s for
on/off control of the PA. Nomi nally, 0 V appli ed wi ll turn ampli fi er completely off; +3.3 V
should be used to set ampli fi er to maxi mum output capabi li ty. At maxi mum output power
capabi li ty, thi s pi n wi ll draw as much as 1 to 2 mA of current. A seri es resi stor i s used to
set the current flow i nto the pi n, therefore setti ng overall bi as level of the PA.
RF Output. RF output of power ampli fi er can be opti mally i mpedance matched wi th
addi ti onal shunt capaci tor enabli ng maxi mum li neari ty. Appli cati on ci rcui t shows stub
capaci tor. Thi s pi n i s also used to bi as the 3rd stage power transi stor through an RF
choke i nductor.
Supply Voltage. Mai n Bi as feed for bi as control ci rcui try on all stages.
Supply Voltage. Bi as for power transi stor of stage 2. Typi cally set to +3.3 V.
Supply Voltage. Bi as for power transi stor of stage 1. Typi cally set to +3.3 V.
2
RF
IN
3
GND
4
V
PC 1
5
GND
6
V
PC 2
7,8,9
RF
OUT
10
11
12
V
CC
V
CC2
V
CC3
2
PRELIMINARY DATA SHEET - Rev 1.4
04/2006
RFS P5032
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
DC Power Supply (V
CC
, V
CC1
, V
CC2
)
Power Control Level (V
PC1
, V
PC2
)
DC Current Consumption
RF Input Level (RF
IN
)
Operating Ambient Temperature
Storage Temperature
MIN
-
-
-
-
-40
-55
MAX
+4.0
+4.0
700
0
+85
+150
UNIT
V
V
mA
dB m
°C
°C
COMMENTS
Applied to series resistors
external to V
PC
pins. No RF
signal applied.
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is
not implied under these conditions. Exposure to absolute ratings for extended periods of time
may adversely affect reliability.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
, V
CC1
, V
CC2
)
Power Control Voltage (V
PC
)
Case Temperature (T
C
)
MIN
4900
+3.0
+2.8
0
-40
TYP
-
+3.3
+3.3
-
-
MAX
5900
+3.6
+3.6
+0.5
+85
UNIT
MHz
V
V
°C
PA "ON"
(1)
PA "SHUTDOWN"
(1)
COMMENTS
802.11a
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
Note:
(1) Applied to series resistors external to V
PC
pins.
PRELIMINARY DATA SHEET - Rev 1.4
04/2006
3
RFS P5032
Table 4: Electrical Specifications - Continuous Wave
(T
C
= +25 °C, V
CC
= +3.3 V, V
PC
= +3.3 V)
PARAMETER
P 1dB
Shutdown Current
Quiescent Current
Input Return Loss
Output Return Loss
Reverse Isolation
Stability (Spurious)
MIN
24
-
77
-
-
30
-
TYP
25
-
85
-15
-15
40
-65
MAX
-
5
93
-10
-10
-
-60
UNIT
dB m
mA
mA
dB
dB
dB
dB c
6:1 VSWR, P
OUT
= +22 dBm; -40
O
C
5 GHz Bias = 0 V
V
PC
= +3.3 V, V
CC
= +3.3 V, RF = Off
with application circuit
with application circuit
COMMENTS
4
PRELIMINARY DATA SHEET - Rev 1.4
04/2006
RFS P5032
Table 5: Electrical Specifications - IEEE 802.11a
(T
C
= +25 °C, V
CC
= +3.3 V, V
PC
= +3.3 V, 64 QAM OFDM 54 Mbps)
PARAMETER
Operating Frequency
Power Gain
Gain Ripple
MIN
4900
23.5
-
-
-
-
-
160
-
-
TYP
-
24.5
6
0.5
3.5
-29
4.5
-27
170
-40
-40
MAX
5900
25.5
-
4.5
-27
5.5
-25
180
-35
-35
UNIT
MHz
dB
dB
%
dB
%
dB
mA
P
OUT
= +19 dBm
Across any 100 MHz band
P
OUT
= +19 dBm, 4.90 - 5.35 GHz
802.11a 54 Mbps data rate
P
OUT
= +19 dBm, 5.35 - 5.85 GHz
802.11a 54 Mbps data rate
P
OUT
= +19 dBm
COMMENTS
Error Vector Magnitude (EVM)
(1)
Current Consumption
Harmonics
2fo
3fo
dB c
P
OUT
= +20 dBm
Note:
(1) EVM includes system noise floor of 1% (-40 dB).
PRELIMINARY DATA SHEET - Rev 1.4
04/2006
5
