Metal thin film chip resistors
(the highest precision)
■RG
series
Features
・
Long term stability with inorganic passivation
・
Less than ±0.1% drift after 10000 hors of reliability test
Thin film surface mount resistors
AEC-Q200 Compliant
・
High precision resistance tolerance: ±0.05%, very small TCR: ±5ppm/℃
・
Thin film structure enabling low noise and anti-sulfur
Applications
・
Automotive electronics
・
Industrial measurement instrumentation, industrial machines
・
Various sensors, medical electronics
RG series
◆Part
numbering system
RG 1608
Series code
Size: RG1005, RG1608, RG2012, RG3216
Temperature coefficient of resistance
N - 102 - B - T5
Packaging quantity:
T5(5,000pcs), T10(10,000pcs)
Resistance tolerance
Nominal resistance value
(E-24: 3 digit, E-96: 4 digit, RG3216: all 4 digit)
◆Electrical
Specification
Type
Power ratings
Low
Regular High
Temperature
coefficient
of resistance
Resistance range
Ω）
Resistance tolerance %）
（
（
±0.02% (P)
100≦R＜3k
100≦R＜3k
ー
ー
100≦R＜5.1k
100≦R＜5.1k
100≦R＜5.1k
ー
47≦R≦270k
ー
47≦R≦270k
47≦R≦332k
ー
47≦R≦1M
10≦R＜47
Maximum
voltage
Resistance
Operating
value series temperature
Pakaging
quantity
(ppm/°C）
±5
（V）
±10
（N）
±25
（P）
±100
（R）
±5
（V）
±0.05% (W)
±0.1% (B)
47≦R＜100k
±0.5%(D)
100≦R＜3k
75V
T5
T10
RG1005
1/32W 1/16W 1/8W
47≦R＜100k
ー
47≦R＜150k
10≦R＜47
RG1608
1/16W 1/10W 1/6W
±10
（N）
±25
（P）
±50
（Q）
±5
（V）
100V
E-24,
E-96
150V
-55℃
∼ 155℃
T5
100≦R＜10.2k
100≦R＜10.2k
100≦R＜10.2k
ー
47≦R≦475k
ー
ー
47≦R≦475k
47≦R≦2.7M
10≦R＜47
RG2012
1/10W 1/8W
1/4W
±10
（N）
±25
（P）
±50
（Q）
±5
（V）
100≦R＜33.2k
100≦R＜33.2k
100≦R＜33.2k
ー
47≦R≦1M
ー
ー
47≦R≦1M
47≦R≦5.1M
10≦R＜47
200V
RG3216
1/8W
1/4W
ー
±10
（N）
±25
（P）
±50
（Q）
◆Dimensions
L
Type
W
(inch)
0402
0603
0805
1206
Size
L
1.00＋0.1/−0.05
1.60±0.20
2.00±0.20
3.20±0.20
W
0.50±0.05
0.80±0.20
1.25±0.20
1.60±0.20
a
0.20±0.10
0.30±0.20
0.40±0.20
0.50±0.25
b
0.25±0.05
0.30±0.20
0.40±0.20
0.50±0.20
t
0.35±0.05
0.40±0.10
0.40±0.10
0.40±0.10
（unit：mm）
RG1005
RG1608
a
RG2012
t
RG3216
b
15
◆Reliability
specification
Test Items
Short time overload
Life (biased)
High temperature
high humidity
Temperature shock
High temperature
exposure
Resistance to
soldering heat
Low
≦47Ω
≧47Ω
Regular
≦47Ω
≧47Ω
High
≦47Ω
≧47Ω
Typical
Low
Condition (test methods)
2.5 x rated voltage, 5 seconds
70℃, rated voltage, 90min on 30min off, 1000hours
85℃, 85%RH, 1/10 of rated power,
90min on 30min off, 1000hours
-55℃ (30min) ∼ 125℃ (30min) 1000cycles
155℃, no bias, 1000hours
260±5℃, 10 seconds (reflow)
*
1
*
1
±0.10%
±0.25%
±0.05%
±0.10%
±0.10%
±0.50%
±0.05%
±0.25%
ー
ー
±0.10% ±(0.01%)
±0.50% ±(0.01%)
±0.25%
±0.10%
±0.50%
±0.25%
ー
±0.50% ±(0.05%)
±0.25%
±0.25%
±0.1％
±0.10%
±0.10%
±0.1％
±0.25%
±0.25%
±0.1％
±0.10%
±0.10%
±0.1％
ー
ー
ー
±0.10% ±(0.01%)
Thin film surface mount resistors
±0.10% ±(0.01%)
±0.1％
±(0.01%)
*1
Rated voltage is given by E=
RxP
E= rated voltage (V), R=nominal resistance value(Ω), P=rated power(W)
If rated voltage exceeds maximum voltage /element, maximum voltage/element is the rated voltage.
◆10000
hour reliability test data
○Biased
life test
0.50
High temoperature life test (85℃)
○High
temperature high humidity (biased)
0.50
High temperature high humidity bias (THB 85℃ 85％）
Sample : RG1608series
Test
Temperature85℃ Humidity85％RH
conditions: 1/10 rated power 90min.on/30min. off
Rated power=0.1W
n=100
RG series
Resistance drift
（%）
Resistance drift
（%）
0.40
0.30
0.20
0.10
0.00
−0.10
−0.20
−0.30
−0.40
−0.50
10
Sample : RG1608series
Test
Temperature85℃
conditions: Rated voltage 90 min. on/30min. off
Rated power=0.1W
n=100
0.40
0.30
0.20
0.10
0.00
−0.10
−0.20
−0.30
−0.40
−0.50
10
1kΩ
10kΩ
56kΩ
100
100kΩ
330kΩ
10000
1kΩ
10kΩ
56kΩ
100
100kΩ
330kΩ
10000
Test duration(h)
1000
3000
Test duration(h)
1000
3000
○Temperature
shock
0.50
Temperature shock
○High
temperature exposure
0.50
High temperature exposure(155℃)
Sample : RG1608series
Test
Temperature155℃
conditions: n=100
Resistance drift
（%）
0.40
0.30
0.20
0.10
0.00
−0.10
−0.20
−0.30
−0.40
−0.50
10
Resistance drift
（%）
Sample : RG1608series
Test
-55℃
（30min）
→room temp 3min）
（.
→
conditions: ＋125℃
（30min）
→room temp 3min）
（.
n=50
0.40
0.30
0.20
0.10
0.00
−0.10
−0.20
−0.30
−0.40
−0.50
10
56kΩ
100kΩ
100
1kΩ
10kΩ
56kΩ
100
100kΩ
330kΩ
10000
Number of cycles
1000
10000
Test duration(h)
1000
3000
◆Derating
Curve
Ratio to rated power (％)
100
High power application
Regular power application
High precision
50
0
−55
0
70 85
Ambient temperature (℃)
155
◆
Maximum pulse power limit
100
Maximum pulse
power limit（W）
Test procedure
10
Voltage pulse is applied to the test samples mounted
on the test board.
1005
1608
2012
3216
type
type
type
type
0.01
0.1
1
10
1
After each pulse, resistance drift is measured. Pulse
voltage is increased until the drift exceeds +/-0.5%.
The power at that voltage is defined as the
maximum pulse power.
0.1
0.0001
0.001
Pulse duration (seconds)
16
NXP MCU
