RGP10A thru RGP10M
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction
Fast Switching Rectifier
DO-204AL (DO-41)
Reverse Voltage
50 to 1000V
Forward Current
1.0A
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
Features
ed*
ent
Pat
Dimensions in
inches and
(millimeters)
0.205 (5.2)
0.160 (4.1)
*
Glass-plastic encap-
®
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
sulation technique is
covered by
Patent No. 3,996,602,
and brazed-lead
assembly by Patent
No. 3,930,306
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High temperature metallurgically bonded construction
• Cavity-free glass passivated junction
• Capable of meeting environmental standards of
MIL-S-19500
• For use in high frequency rectifier circuits
• Fast switching for high efficiency
• 1.0 Ampere operation at T
A
=55°C with no thermal runaway
• Typical I
R
less than 0.1µA
• High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case:
JEDEC DO-204AL molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 oz., 0.3 g
0.023 (0.58)
for suffix "E" part numbers
Maximum Ratings & Thermal Characteristics
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55°C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length T
A
=55°C
Typical thermal resistance
(NOTE 1)
Operating junction and storage temperature range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
R
ΘJA
T
J
, T
STG
RGP
10A
50
35
50
Ratings at 25°C ambient temperature unless otherwise specified.
RGP
10B
100
70
100
RGP
10D
200
140
200
RGP
10G
400
280
400
1.0
30
100
55
RGP
10J
600
420
600
RGP
10K
800
560
800
RGP
10M
1000
700
1000
Unit
V
V
V
A
A
µA
°C/W
°C
-65 to +175
Electrical Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
V
F
I
R
t
rr
C
J
T
A
=25°C
T
A
=150°C
RGP
10A
RGP
10B
RGP
10D
RGP
10G
1.3
5.0
200
RGP
10J
RGP
10K
RGP
10M
Unit
V
µA
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Typical junction capacitance at 4.0V, 1MHz
150
15
250
500
ns
pF
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
Document Number 88700
28-Feb-02
www.vishay.com
1
RGP10A thru RGP10M
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
Average Forward Rectified Current (A)
1.0
Resistive or Inductive Load
30
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
20
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
0.75
0.5
Forward Surge Current (A)
0.375" (9.5mm) Lead Length
50
75
100
125
150
175
10
0.25
0
25
0
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
10
20
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
10
T
J
= 125°C
1
T
J
= 75°C
0.1
Instantaneous Forward Current (A)
1
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
0.1
T
J
= 25°C
0.01
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
100
Fig. 6 – Typical Transient
Thermal Impedance
100
Transient Thermal Impedance (°CW)
Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
10
10
1
1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
Document Number 88700
28-Feb-02
www.vishay.com
2
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