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RGP30B

3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

器件类别:半导体    分立半导体   

厂商名称:MCC

厂商官网:http://www.mccsemi.com

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MCC
Features
  omponents
21201 Itasca Street Chatsworth

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RGP30A
THRU
RGP30M
3.0 Amp Glass
Passivated Junction
Fast Recovery
Rectifiers
50 to 1000 Volts
DO-201AD
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
3.0 amperes operation at T =55
O
C and with no
A
thermal runaway.
Typical I
R
less than 0.2uA
Fast switching for high efficiency
Maximum Ratings
Operating Temperature: -55
O
C to +150
O
C
Storage Temperature: -55
O
C to +150
O
C
Typical Thermal Resistance: 25
O
C/W Junction to Ambient
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
I
F(AV)
I
FSM
Maximum DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
T
A
= 55
O
C
8.3ms, half sine
MCC
Part Number
RGP30A
RGP30B
RGP30D
RGP30G
RGP30J
RGP30K
RGP30M
Maximum
RMS Voltage
35V
70V
140V
280V
420V
560V
700V
3.0 A
125A
D
A
Cathode
Mark
B
D
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Maximum Average
Forward Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
RGP30A-30G
RGP30J
RGP30K-30M
Typical Junction
Capacitance
C
DIMENSIONS
V
F
1.3V
I
FM
= 3.0A;
I
R
5.0uA
100uA
T
A
=25
O
C
T
A
=150
O
C
DIM
A
B
C
D
INCHES
MIN
---
---
.048
1.000
MAX
.370
.250
.052
---
MM
MIN
---
---
1.20
25.40
MAX
9.50
6.40
1.30
---
NOTE
Trr
C
J
150nS
250nS
500nS
60pF
T
J
=25
O
C
I
F
=0.5A
I
R
=1.0A
I
RR
=0.25A
Measured at
1.0MHz, V
R
=4.0V
www.mccsemi.com
RGP30A thru RGP30M
Figure 1
Typical Forward Characteristics
20
10
6
4
2
Amps
1
.6
.4
.2
.1
.06
.04
.02
.01
.4
.6
.8
1.0
1.2
1.4
0
0
.5
Amps
1.0
3.0
MCC
Figure 2
Forward Derating Curve
2.5
25
O
C
2.0
1.5
Single Phase, Half Wave
60Hz Resistive or Inductive Load
50
75
100
O
125
150
175
C
Average Forward Rectified Current - Amperes
versus
Ambient Temperature -
O
C
Volts
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
60
40
20
pF
10
6
4
2
1
.1
.2
.4
1
2
4
10
Volts
20
40
100 200
400
1000
T
J
=25
O
C
Junction Capacitance - pF
versus
Reverse Voltage - Volts
www.mccsemi.com
RGP30A thru RGP30M
MCC
Figure 4
Peak Forward Surge Current
200
100
80
60
Amps 40
20
01
2
4
6 8 10 20
Cycles
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
40
60 80 100
Figure 5
Reverse Recovery Time Characteristic And Test Circuit Diagram
50Ω
10Ω
t
rr
+0.5A
0
25Vdc
Pulse
Generator
Note 2
1Ω
Notes:
1. Rise Time = 7ns max.
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
Oscilloscope
Note 1
-0.25
-1.0
1cm
Set Time Base for 20/100ns/cm
www.mccsemi.com
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参数对比
与RGP30B相近的元器件有:RGP30M、RGP30K、RGP30J、RGP30G、RGP30D、RGP30A、RGP30。描述及对比如下:
型号 RGP30B RGP30M RGP30K RGP30J RGP30G RGP30D RGP30A RGP30
描述 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
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