Preliminary
Datasheet
RJH60D7DPQ-E0
600V - 50A - IGBT
Application: Inverter
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 50 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 50 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 50 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0740EJ0100
Rev.1.00
Apr 19, 2012
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
i
DF
(peak)
Note1
P
C Note2
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
600
±30
90
50
200
50
200
300
0.42
1.07
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0740EJ0100 Rev.1.00
Apr 19, 2012
Page 1 of 9
RJH60D7DPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
FRD forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test
Symbol
V
BR(CES)
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
V
F
t
rr
Q
rr
I
rr
Min
600
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
—
—
Typ
—
—
—
—
1.6
1.8
3000
160
85
130
20
45
60
46
190
50
1.1
0.6
1.7
5.0
1.4
100
0.4
6.5
Max
—
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
—
—
—
Unit
V
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
s
V
ns
C
A
Test Conditions
I
C
=10
A,
V
GE
= 0
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 50 A, V
GE
= 15 V
Note3
I
C
= 90 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 50 A
V
CC
= 300 V
V
GE
= 15 V
I
C
= 50 A
Rg = 5
(Inductive load)
V
CC
360 V, V
GE
= 15 V
I
F
= 50 A
Note3
I
F
= 50 A
di
F
/dt = 100 A/s
R07DS0740EJ0100 Rev.1.00
Apr 19, 2012
Page 2 of 9
RJH60D7DPQ-E0
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
400
120
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
300
Collector Current I
C
(A)
100
80
60
40
20
0
200
100
0
0
25
50
75
100 125 150 175
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
300
Turn-off SOA
Collector Current I
C
(A)
=
100
10
0
10
μ
s
μ
s
Collector Current I
C
(A)
PW
250
200
150
100
50
0
10
1
Tc = 25°C
Single pulse
10
100
1000
0.1
1
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
Pulse Test
Tc = 25
°
C
11 V
Typical Output Characteristics
Pulse Test
Tc = 150
°
C
15 V
11 V
10 V
120
9V
80
V
GE
= 8 V
40
Collector Current I
C
(A)
120
15 V
9V
80
V
GE
= 8 V
40
0
0
1
2
3
4
5
Collector Current I
C
(A)
160
10 V
160
0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS0740EJ0100 Rev.1.00
Apr 19, 2012
Page 3 of 9
RJH60D7DPQ-E0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Tc = 25
°
C
Pulse Test
4
I
C
= 50 A
90 A
3
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 150
°
C
Pulse Test
4
I
C
= 50 A
90 A
3
2
2
1
4
8
12
16
20
1
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
−25
50 A
25 A
V
GE
= 15 V
Pulse Test
I
C
= 90 A
Typical Transfer Characteristics
200
Collector Current I
C
(A)
160
Tc = 25°C
150°C
120
80
40
V
CE
= 10 V
Pulse Test
0
0
4
8
12
16
20
0
25
50
75
100 125 150
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
50
Case Temparature Tc (
°
C)
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Frequency Characteristics (Typical)
8
I
C
= 10 mA
Collector Current I
C(RSM)
(A)
40
0
Collector current wave
(Square wave)
6
30
4
1 mA
20
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
10
Tj = 125°C
Tc = 90°C
V
CE
= 400 V
V
GE
= 15 V
Rg = 5
Ω
duty = 50%
10
100
1000
0
1
Case Temparature Tc (°C)
Frequency f (kHz)
R07DS0740EJ0100 Rev.1.00
Apr 19, 2012
Page 4 of 9
RJH60D7DPQ-E0
Switching Characteristics (Typical) (1)
Preliminary
Switching Characteristics (Typical) (2)
td(off)
100
tf
td(on)
Swithing Energy Losses E (mJ)
1000
100
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
Switching Times t (ns)
10
1
Eon
Eoff
10
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
1
10
100
0.1
1
0.01
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Tc = 150
°
C
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
Swithing Energy Losses E (mJ)
10000
10
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Tc = 150
°
C
Switching Times t (ns)
1000
td(off)
tf
100
tr
td(on)
10
1
10
100
Eon
1
Eoff
0.1
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
Switching Characteristics (Typical) (6)
Swithing Energy Losses E (mJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Rg = 5
Ω
td(off)
100
10
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Rg = 5
Ω
Eon
1
Eoff
tf
td(on)
tr
10
25
50
75
100
125
150
0.1
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS0740EJ0100 Rev.1.00
Apr 19, 2012
Page 5 of 9
PCB设计
