Preliminary
Datasheet
RJK0389DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
REJ03G1722-0410
High Speed Power Switching
Rev.4.10
May 13, 2010
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DD-A
(Package name: WPAK-D2)
2 3 4
D1 D1 D1
9
S1/D2
5
6
7
8
5 6 7 8
1
G1
8
G2
9
4 3 2 1
4
S2 S2 S2
5 6 7
3
2
1
(Bottom View)
1, 8
Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
MOS1
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
Tch
Tstg
MOS1
30
±20
15
60
15
8
6.4
10
150
–55 to +150
MOS2
30
±20
20
80
20
11
12.1
10
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
REJ03G1722-0410 Rev.4.10
May 13, 2010
Page 1 of 10
RJK0389DPA
Preliminary
Electrical Characteristics
• MOS1
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
8.2
11.8
32
860
165
53
4.2
6.3
2.3
1.4
6.9
4.1
40.8
5.6
0.84
20
Max
—
±0.1
1
2.5
10.7
16.5
—
—
—
—
—
—
—
—
—
—
—
—
1.10
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 7.5 A, V
GS
= 10 V
Note4
I
D
= 7.5 A, V
GS
= 4.5 V
Note4
I
D
= 7.5 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 15 A
V
GS
= 10 V, I
D
= 7.5 A
V
DD
10 V
R
L
= 1.33
R
g
= 4.7
I
F
= 15 A, V
GS
= 0
Note4
I
F
=15 A, V
GS
= 0
di
F
/ dt = 100 A/s
REJ03G1722-0410 Rev.4.10
May 13, 2010
Page 2 of 10
RJK0389DPA
• MOS2
Preliminary
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Schottky Barrier diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
6.8
10.5
38
1000
240
100
4.5
7.2
2.9
2.2
8.5
4.0
39
6.6
0.44
12
Max
—
±0.1
1
2.5
8.9
14.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
A
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
=1 mA
I
D
= 10 A, V
GS
= 10 V
Note4
I
D
= 10 A, V
GS
= 4.5 V
Note4
I
D
= 10 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 20 A
V
GS
= 10 V, I
D
= 10 A
V
DD
10 V
R
L
= 1.0
R
g
= 4.7
I
F
= 2 A, V
GS
= 0
Note4
I
F
= 20 A, V
GS
= 0
di
F
/ dt = 100 A/s
REJ03G1722-0410 Rev.4.10
May 13, 2010
Page 3 of 10
RJK0389DPA
Preliminary
Main Characteristics
• MOS1
Power vs. Temperature Derating
20
1000
Maximum Safe Operation Area
Pch (W)
I
D
(A)
15
100
Channel Dissipation
Drain Current
10
10
10
5
Operation in
this area is
1 limited by R
DS(on)
DC
Tc = 25°C
1 shot Pulse
1
1m
s
ms
op
er
ati
on
0
50
100
150
200
0.1
0.1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
20
4.5 V
10 V
3.2 V
Pulse Test
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
12
3.0 V
I
D
(A)
Drain Current
16
16
12
Drain Current
8
2.8 V
4
8
25°C
Tc = 75°C
–25°C
4
V
GS
= 2.6 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(mV)
200
Pulse Test
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
150
30
V
GS
= 4.5 V
10
10 V
3
100
I
D
= 10 A
50
5A
2A
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
REJ03G1722-0410 Rev.4.10
May 13, 2010
Page 4 of 10
RJK0389DPA
Static Drain to Source On State Resistance
vs. Temperature
50
Pulse Test
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
40
1000
Ciss
300
100
30
V
GS
= 0
f = 1 MHz
10
20
Coss
Crss
30
I
D
= 2 A, 5 A, 10 A
20
V
GS
= 4.5 V
10
10 V
0
–25
0
25
50
2 A, 5 A, 10 A
75
100 125 150
10
0
30
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
50
Dynamic Input Characteristics
V
DS
(V)
50
40
V
DD
= 25 V
10 V
30
V
DS
16
Reverse Drain Current I
DR
(A)
I
D
= 15 A
V
GS
10 V
40
5V
Pulse Test
Drain to Source Voltage
12
Gate to Source Voltage
30
20
8
20
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
8
16
24
32
4
10
0
40
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
10
8
6
4
2
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1722-0410 Rev.4.10
May 13, 2010
Page 5 of 10
