Preliminary
Datasheet
RJK1212DPA
120V, 3A, 310m max.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
R07DS0091EJ0400
Rev.4.00
Apr 11, 2013
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AS Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
120
+12, -5
3
9
3
2
0.34
15
8.33
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0091EJ0400 Rev.4.00
Apr 11, 2013
Page 1 of 6
RJK1212DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
120
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
240
250
6.5
450
42
17
2.7
4.0
1.5
1.0
6.7
3.0
32
3.4
0.83
30
Max
—
± 0.1
10
2.5
310
340
—
—
—
—
—
—
—
—
—
—
—
1.1
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= +12, -5 V, V
DS
= 0
V
DS
= 120 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.5 A, V
GS
= 10 V
Note4
I
D
= 1.5 A, V
GS
= 4.5 V
Note4
I
D
= 1.5 A, V
DS
= 5 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 50 V
V
GS
= 4.5 V
I
D
= 3 A
V
GS
= 10 V, I
D
= 1.5 A
V
DD
30 V
R
L
= 20
Rg = 4.7
I
F
= 3 A, V
GS
= 0
Note4
I
F
=3 A, V
GS
= 0
di
F
/ dt = 100 A/
s
R07DS0091EJ0400 Rev.4.00
Apr 11, 2013
Page 2 of 6
RJK1212DPA
Preliminary
Main Characteristics
Power vs.Temperature Derating
20
Maximum Safe Operation Area
50
10
10
Channel Dissipation Pch (W)
Drain Current I
D
(A)
15
1
10
μ
s
m
s
0
μ
s
1
PW = 10 ms
C
D
10
O
r
pe
0.1
io
at
5
0.01
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot Pulse
n
0
50
100
150
200
0.001
0.1
1
10
100 300
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
10
10
Typical Transfer Characteristics
V
DS
= 5 V
Pulse Test
8
Tc = 25°C
10 V
Pulse Test
Tc = 25°C
Drain Current I
D
(A)
4.5 V
3.4 V
3.2 V
Drain Current I
D
(A)
8
6
6
4
3.0 V
4
2
V
GS
= 2.8 V
2
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
1.6
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(mΩ)
Drain to Source Saturation Voltage
V
DS(on)
(V)
2.0
1000
V
GS
= 4.5 V
10 V
1.2
100
0.8
I
D
= 3 A
2A
0.4
1A
Pulse Test
10
0.1
1
10
0
2
4
6
8
10
12
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0091EJ0400 Rev.4.00
Apr 11, 2013
Page 3 of 6
RJK1212DPA
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1000
Pulse Test
I
D
= 1.5 V
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
800
1000
Ciss
600
V
GS
= 4.5 V
400
10 V
100
Coss
10
V
GS
= 0
f = 1 MHz
1
10
Crss
200
0
−25
0
25
50
75
100 125 150
1
0.1
100
1000
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Voltage V
GS
(V)
5
Dynamic Input Characteristics (Typical)
Drain to Source Voltage V
DS
(V)
80
Reverse Drain Current I
DR
(A)
I
D
= 3 A
Ta = 25
°C
V
DS
V
DD
= 50 V
25 V
10 V
V
GS
16
60
12
4
V
GS
= 0 V
Pulse Test
Ta = 25
°C
3
40
8
2
1
20
V
DD
= 50 V
25 V
10 V
4
0
6
8
10
0
2
4
0
0.2
0.4
0.6
0.8
1.0
Gate Charge Qg (nC)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
0.5
I
AP
= 2 A
V
DD
= 50 V
duty < 0.1%
Rg
≥
50
Ω
Avalanche Energy E
AS
(mJ)
0.4
0.3
0.2
0.1
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0091EJ0400 Rev.4.00
Apr 11, 2013
Page 4 of 6
RJK1212DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Normalized Transient Thermal Impedance
γ
s (t)
3
1
D=1
0.5
0.3
0.2
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 8.33°C/W, Tc = 25°C
0.1
0.05
0.0
2
0.03
1
0.0
e
puls
hot
1s
P
DM
PW
T
1m
10 m
100 m
1
D=
PW
T
0.01
10
μ
100
μ
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AS
=
L
•
I
AP2
•
I
D
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0091EJ0400 Rev.4.00
Apr 11, 2013
Page 5 of 6
