N-Channel MOS FET
FKP250A
■Features
●Low
on-resistance
●Low
input capacitance
●Avalanche
energy capability guaranteed
June
, 2007
■Package---
FM100 (TO-3P Full Mold)
■Applications
●PDP
driving
●High
speed switching
■Equivalent
circuit
D (2)
G (1)
S (3)
■Absolute
maximum ratings
(Ta=25°C）
Parameter
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Channel Temperature
Storage Temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
P
D
E
AS
*
2
I
AS
T
ch
T
stg
Rating
250
±30
±50A
±200A
85 (Tc=25°C)
400
50
150
－55
to 150
Unit
V
V
A
A
W
mJ
A
°C
°C
*1 PW≤100μs，duty cycle≤１%
*2 V
DD
=20V, L=300μH, I
Lp
=50A, unclamped, R
G
=50Ω, See Fig.1
Sanken Electric Co., Ltd.
http://www.sanken-ele.co.jp/en/
1/9
T02-008EA-070531
N-Channel MOS FET
FKP250A
Electrical characteristics
Parameter
Symbol
Test Conditions
June
, 2007
(Ta=25°C）
Limits
MIN.
250
±100
100
3.0
30
42
37
3800
630
210
40
I
D
=25A, V
DD
≈125V
R
L
=5Ω, V
GS
=10V
R
G
=5Ω
See Fig.2
90
I
SD
=50A,V
GS
=0V
V
DS
=10V, I
D
=1mA
1.0
-11
1.5
V
mV/°C
110
ns
160
pF
43
4.5
TYP.
MAX.
Unit
V
nA
μA
V
S
mΩ
Drain to Source breakdown Voltage
Gate to Source Leakage Current
Drain to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Forward Voltage
Gate Threshold Voltage Temp.
Coefficient
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re(Y
fs
)
R
DS(on)
C
iss
C
oss
C
rss
I
D
=100μA,V
GS
=0V
V
GS
=±30V
V
DS
=250V, V
GS
=0V
V
DS
=10V, I
D
=1mA
V
DS
=10V, I
D
=25A
I
D
=25A, V
GS
=10V
V
DS
=25V
V
GS
=0V
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
V
SD
ΔV
TH
/
Δ
Tch
Sanken Electric Co., Ltd.
T02-008EA-070531
2/9
N-Channel MOS FET
FKP250A
Characteristic Curves
ID-VDS Characteristics (typical)
50
VGS=10V
6.0V
40
June
, 2007
(Tc=25℃)
ID-VGS Characteristics (typical)
VDS=10V
50
40
30
ID (A)
5.5V
30
ID (A)
20
20
125℃
25℃
Tc=-55℃
4.5V
10
5.0V
10
0
0
2
4
VDS (V)
6
8
10
0
0
2
4
VGS (V)
6
8
10
VDS-VGS Characteristics (typical)
RDS(ON)- ID Ch aracte ristic s (typic al)
VGS=10V
60
5
4
50
RDS(on) (mΩ)
30
VDS (V)
40
3
2
ID=50A
20
1
10
ID=25A
0
0
10
20
ID (A)
30
40
50
0
1
10
VGS (V)
100
RDS(ON)-Tc Ch aracte ristic s ( typical)
100
90
80
70
RDS(on) (mΩ)
60
50
40
30
20
10
0
-100
ID=25A
VGS=10V
-50
0
Tc (℃)
50
100
150
Sanken Electric Co., Ltd.
T02-008EA-070531
3/9
N-Channel MOS FET
FKP250A
Characteristic Curves
Re(yfs)-ID Characteristics (typical)
VDS=10V
100
10000
June
, 2007
(Tc=25℃)
Capacitance-VDS Characteristics (typical)
f=1MHz
VGS=0V
Ciss
10
Tc=-55℃
Re(yfs) (S)
25℃
1
125℃
Capacitance (pF)
1000
Coss
Crss
100
0.1
0.01
0.01
10
0.1
1
ID (A)
10
100
0
10
20
VDS (V)
30
40
50
IDR-VSD Characteristics (typical)
50
1000
SAFE OPERATING AREA
ID(pulse) max
40
100
ID max
100μs(1shot)
30
IDR (A)
ID [A]
10
20
10V
RDS(on) LIMITED
1ms
1
10
VGS=0V
0.1
0
0.0
0.5
VSD (V)
1.0
1.5
0.01
0.1
1
10
VDS [V]
100
DC
PD-Ta Characteristics
100
1000
80
60
PD (W)
With infinite heatsink
40
20
Without heatsink
0
0
50
Ta (℃)
100
150
Sanken Electric Co., Ltd.
T02-008EA-070531
4/9
N-Channel MOS FET
FKP250A
Fig.1 Unclamped Inductive Test Method
E
AS
=
V
(BR)DSS
V
DS
I
Lp
R
G
V
GS
0V
V
DD
I
L
V
DD
V
DS
L
June
, 2007
1
V
(BR)DSS
·
L
·
I
LP
2
·
2
V
(BR)DSS
−
V
DD
I
L
(a) Test Circuit
(b) Waveforms
Fig.2
Switching Time Test Method
R
L
I
D
V
DS
R
G
V
GS
0V
P.W.=10μs
Duty cycle≦1%
V
DD
V
DD
≈125
I
D
=25
R
L
=5Ω
V
GS
=10V
R
G
=5Ω
(a) Test Circuit
90%
V
GS
10%
90%
V
DS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
(b) Waveforms
Sanken Electric Co., Ltd.
T02-008EA-070531
5/9
