RN2110CT,RN2111CT
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2110CT,RN2111CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.0±0.05
Unit: mm
0.6±0.05
0.5±0.03
0.25±0.03
•
Complementary to RN1110CT, RN1111CT
0.25±0.03
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
１
２
0.35±0.02
Equivalent Circuit
C
0.15±0.03
0.65±0.02
0.05±0.03
•
Incorporating a bias resistor into a transistor reduces parts count.
３
1.BASE
B
R1
CST3
2.EMITTER
3.COLLECOTR
E
JEDEC
JEITA
TOSHIBA
2-1J1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−20
−20
−5
−50
50
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Weight: 0.75 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-17
0.38 +0.02
-0.03
0.05±0.03
―
―
RN2110CT,RN2111CT
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2110CT
RN2111CT
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test Condition
V
CB
= −20
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −1
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
⎯
Min
⎯
⎯
300
⎯
⎯
3.76
8
1.2
4.7
10
Typ.
⎯
⎯
⎯
Max
−100
−100
⎯
−0.15
⎯
5.64
12
V
pF
kΩ
Unit
nA
nA
2
2009-04-17
RN2110CT,RN2111CT
RN2110CT
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT
(mA)
COLLECTOR CURRENT
IC
(μA)
RN2110CT
IC - VI(OFF)
Ta=100°C
-1000
-25
25
-100
EMITTER COMMON
VCE=-5V
-10
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT OFF VOLTAGE VI(OFF) ( V)
-10
Ta=100°C
25
-1
-25
EMITTER COMMON
VCE=-0.2V
-0.1
-0.1
-1
-10
-100
INPUT ON VOLTAGE VI(ON) ( V)
RN2111CT
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2111CT
IC - VI(OFF)
Ta=100°C
-10
-1000
Ta=100°C
-100
EMITTER COMMON
VCE=-5V
-10
25
25
-1
-25
EMITTER COMMON
VCE=-0.2V
-0.1
-0.1
-1
-10
INPUT ON VOLTAGE VI(ON) ( V)
-100
-25
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT OFF VOLTAGE VI(OFF) ( V)
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2009-04-17
RN2110CT,RN2111CT
RN2110CT
10000
hFE - IC
RN2110CT
VCE(sat) - IC
1000
Ta=100°C
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
-1000
DC CURRENT GAIN hFE
-100
Ta=100°C
100
-25
25
-10
25
-25
EMITTER COMMON
IC/IB=20
EMITTER COMMON
VCE=-5V
10
-0.1
-1
-10
-100
-1
-0.1
COLLECTOR CURRENT IC (mA)
-1
-10
COLLECTOR CURRENT IC (mA)
-100
RN2111CT
10000
hFE - IC
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN2111CT
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
1000
-100
Ta=100°C
25
100
-25
EMITTER COMMON
VCE=-5V
10
-0.1
-10
25
-25
EMITTER COMMON
IC/IB=20
-1
-10
-100
-1
-0.1
COLLECTOR CURRENT IC (mA)
-1
-10
COLLECTOR CURRENT IC (mA)
-100
4
2009-04-17
RN2110CT,RN2111CT
Type Name
Marking
Type name
1
RN2110CT
U9
2
3
Type name
RN2111CT
1
UF
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
5
2009-04-17
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