RN2301~RN2306
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2301, RN2302, RN2303
RN2304, RN2305, RN2306
Unit: mm
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1301 to RN1306
Equivalent Circuit
Bias Resistor Values
Type No.
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
USM
JEDEC
JEITA
TOSHIBA
Weight: 0.006g
―
SC-70
2-2E1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2301 to RN2306
RN2301 to RN2306
RN2301 to RN2304
RN2305, RN2306
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−10
−5
−100
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1987-09
1
2014-03-01
RN2301~RN2306
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
RN2301 to 2306
RN2301
RN2302
Emitter cut-off current
RN2303
RN2304
RN2305
RN2306
RN2301
RN2302
DC current gain
RN2303
RN2304
RN2305
RN2306
Collector-emitter
saturation voltage
RN2301 to 2306
RN2301
RN2302
Input voltage (ON)
RN2303
RN2304
RN2305
RN2306
Input voltage (OFF)
Translation frequency
Collector output
capacitance
RN2301 to 2304
RN2305, 2306
RN2301 to 2306
RN2301 to 2306
RN2301
RN2302
Input resistor
RN2303
RN2304
RN2305
RN2306
RN2301 to 2304
Resistor ratio
RN2305
RN2306
R1/R2
R1
V
I (OFF)
f
T
C
ob
V
I (ON)
V
CE (sat)
h
FE
I
EBO
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0
f = 1MHz
V
CE
=
−0.2V,
I
C
=
−5mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−5V,
I
C
=
−10mA
V
EB
=
−5V,
I
C
= 0
V
EB
=
−10V,
I
C
= 0
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
Min
―
―
−0.82
−0.38
−0.17
−0.082
−0.078
−0.074
30
50
70
80
80
80
―
−1.1
−1.2
−1.3
−1.5
−0.6
−0.7
−1.0
−0.5
―
―
3.29
7
15.4
32.9
1.54
3.29
0.9
Typ.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
−0.1
―
―
―
―
―
―
―
―
200
3
4.7
10
22
47
2.2
4.7
1.0
Max
−100
−500
−1.52
−0.71
−0.33
−0.15
−0.145
−0.138
―
―
―
―
―
―
−0.3
−2.0
−2.4
−3.0
−5.0
−1.1
−1.3
−1.5
−0.8
―
6
6.11
13
28.6
61.1
2.86
6.11
1.1
―
kΩ
V
MHz
pF
V
V
―
mA
Unit
nA
0.0421 0.0468 0.0515
0.09
0.1
0.11
2
2014-03-01
RN2301~RN2306
3
2014-03-01
RN2301~RN2306
4
2014-03-01
RN2301~RN2306
5
2014-03-01
微控制器 MCU
