Data Sheet
4V Drive Pch MOSFET
RP1H065SP
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
MPT6
(Single)
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
(6)
(5)
(4)
(1)
(2)
(3)
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RP1H065SP
Taping
TR
1000
Inner circuit
(6)
(5)
(4)
∗2
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗1
(1)
(2)
(3)
Absolute
maximum ratings
(T
a
= 25˚C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
1
ESD PROTECTION DIODE
2
BODY DIODE
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
*1
Limits
45
20
6.5
26
1.6
26
2.0
150
55
to
150
Unit
V
V
A
A
A
A
W
C
C
Continuous
Pulsed
Continuous
Pulsed
*1
*2
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
R
th (ch-a)
*
Limits
62.5
Unit
C
/ W
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
RP1H065SP
Electrical
characteristics
(T
a
= 25°C)
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Symbol
I
GSS
I
DSS
V
GS (th)
R
DS (on)
l Y
fs
l*
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
*
Q
gs
*
Q
gd
*
*
Min.
-
45
-
1.0
-
-
-
9
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
22
30
33
-
3200
400
240
19
27
120
58
28
7
9
Max.
10
-
1
3.0
31
42
46
-
-
-
-
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Unit
A
V
A
V
Conditions
V
GS
=20V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=45V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=6.5A, V
GS
=10V
m I
D
=6.5A, V
GS
=4.5V
I
D
=6.5A, V
GS
=4.0V
I
D
=6.5A, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=3.25A, V
DD
25V
V
GS
=10V
R
L
=7.7
R
G
=10
I
D
=6.5A, V
DD
25V
V
GS
=5V
Data Sheet
Drain-source breakdown voltage V
(BR)DSS
Body
diode characteristics
(Source-Drain) (T
a
= 25C)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=6.5A, V
GS
=0V
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2/6
2011.08 - Rev.A
RP1H065SP
Electrical
characteristic curves
(Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
13
12
11
10
Drain Current :
-I
D
[A]
9
8
7
6
5
4
3
2
1
0
0
0.2
0.4
0.6
V
GS
=-2.5V
0.8
1
T
a
=25°C
pulsed
V
GS
=-10V
V
GS
=-4.5V
V
GS
=-4.0V
Data Sheet
Fig.2 Typical Output Characteristics (Ⅱ)
13
12
11
10
Drain Current :
-I
D
[A]
V
GS
=-10.0V
V
GS
=-4.5V
V
GS
=-4.0V
V
GS
=-3.0V
T
a
=25°C
pulsed
V
GS
=-3.0V
9
8
7
6
5
4
3
2
1
0
0
1
2
3
V
GS
=-2.5V
4
5
6
7
8
9
10
Drain-Source Voltage :
-V
DS
[V]
Drain-Source Voltage :
-V
DS
[V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
100
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
T
a
=25°C
pulsed
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
1000
V
GS
=-10V
pulsed
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
V
GS
=-4.0V
V
GS
=-4.5V
V
GS
=-10V
100
10
10
0.01
0.1
1
10
1
0.01
0.1
1
10
Drain Current :
-I
D
[A]
Drain Current :
-I
D
[A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
1000
V
GS
=-4.5V
pulsed
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
FIg.6 Static Drain-Source On-State Resistance vs. Drain Current
1000
V
GS
=-4V
pulsed
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
100
100
10
10
1
0.01
0.1
1
10
1
0.01
0.1
1
10
Drain Current :
-I
D
[A]
Drain Current :
-I
D
[A]
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3/6
2011.08 - Rev.A
RP1H065SP
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
V
DS
=-10V
pulsed
1
Forward Transfer Admittance
Y
fs
[S]
10
Drain Currnt :
-I
D
[A]
10
Fig.8 Typical Transfer Characteristics
V
DS
=-10V
pulsed
0.1
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
1
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
0.01
0.001
0.1
0.01
0.1
1
10
0.0001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Drain Current :
-I
D
[A]
Gate-Source Voltage :
-V
GS
[V]
Fig.9 Source Current vs. Source-Drain Voltage
10
V
GS
=0V
pulsed
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
100
90
80
70
60
50
40
30
20
10
I
D
=-3.25A
I
D
=-6.5A
T
a
=25°C
pulsed
1
Source Current :
-I
s
[A]
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
0.1
0.01
0.001
0.0001
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
0.5
1.0
0.0
0
0
2
4
6
8
10
12
14
16
18
20
Source-Drain Voltage :
-V
SD
[V]
Gate-Source Voltage :
-V
GS
[V]
Fig.11 Switching Characteristics
10000
V
DD
≒-25V
V
GS
=-10V
R
G
=10Ω
T
a
=25°C
Pulsed
t
f
10
9
8
Gate-Source Voltage :
-V
GS
[V]
7
6
5
4
3
2
1
1
0.01
0.1
1
10
0
0
5
10
T
a
=25°C
V
DD
=-25V
I
D
=-6.5A
Pulsed
Fig.12 Dynamic Input Characteristics
1000
Switching Time : t [ns]
100
t
d(off)
t
d(on)
10
t
r
15
20
25
30
35
40
45
50
55
60
Drain Current :
-I
D
[A]
Total Gate Charge : Q
g
[nC]
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4/6
2011.08 - Rev.A
RP1H065SP
Data Sheet
Fig.13 Typical Capacitance vs. Drain-Source Voltage
100000
T
a
=25°C
f=1MHz
V
GS
=0V
100
Fig.14 Maximum Safe Operating Area
Operation in this area is limited by R
DS(on)
(V
GS
=
-10V)
C
iss
Drain Current :
-I
D
[ A ]
10000
Capacitance : C [pF]
P
W
= 100μs
10
P
W
= 1ms
1
P
W
= 10ms
1000
C
oss
100
C
rss
10
0.1
T
a
=25°C
Single Pulse
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
0.01
0.1
1
10
100
0.01
0.1
1
10
1
DC Operation
100
Drain-Source Voltage :
-V
DS
[V]
Drain-Source Voltage :
-V
DS
[ V ]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Normalized Transient Thermal Resistance : r（t）
T
a
=25°C
Single Pulse
1
0.1
0.01
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
Rth
(ch-a)
=62.5°C/W
Rth
(ch-a)
(t)=r(t)×Rth
(ch-a)
0.001
0.01
0.1
1
10
100
1000
0.001
0.0001
Pulse width : Pw (s)
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2011.08 - Rev.A
